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Journal description
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Details for article 27 of 30 found articles
| Title: |
The world’s first high voltage GaN-on-Diamond power semiconductor devices |
| Author: |
Baltynov, Turar Unni, Vineet Narayanan, E.M. Sankara |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 125 (2016) nr. C pages 7 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 27 of 30 found articles
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