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Journal description
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Details for article 12 of 30 found articles
| Title: |
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors |
| Author: |
Capriotti, M. Bahat Treidel, E. Fleury, C. Bethge, O. Ostermaier, C. Rigato, M. Lancaster, S.L.C. Brunner, F. Detz, H. Hilt, O. Würfl, J. Pogany, D. Strasser, G. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 125 (2016) nr. C pages 7 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 30 found articles
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