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Journal description
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Details for article 3 of 13 found articles
| Title: |
Characterization of interface defects in ALD Al2O3/p-GaSb MOS capacitors using admittance measurements in range from kHz to GHz |
| Author: |
Gu, Siyuan Min, Jie Taur, Yuan Asbeck, Peter M. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 118 (2016) nr. C pages 8 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 13 found articles
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