|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 18 of 24 found articles
| Title: |
Quantum simulation of a heterojunction vertical tunnel FET based on 2D transition metal dichalcogenides |
| Author: |
Cao, Jiang Cresti, Alessandro Esseni, David Pala, Marco |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 116 (2016) nr. C pages 7 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 18 of 24 found articles
| << previous | next >> |