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  A study on NiGe-contacted Ge n+/p Ge shallow junction prepared by dopant segregation technique
 
 
Title: A study on NiGe-contacted Ge n+/p Ge shallow junction prepared by dopant segregation technique
Author: Tsui, Bing-Yue
Shih, Jhe-Ju
Lin, Han-Chi
Lin, Chiung-Yuan
Appeared in: Solid-state electronics
Paging: Volume 107 (2015) nr. C pages 7 p.
Year: 2015
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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