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                                       Details for article 13 of 23 found articles
 
 
  FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application
 
 
Title: FinFETs using reverse substrate layer with improved gate capacitance characteristics for subthreshold application
Author: Wei, Xing
Zhong, Jian
Luo, Jun
Wu, Hao
Zhu, Huilong
Zhao, Chao
Yin, Haizhou
Appeared in: Solid-state electronics
Paging: Volume 104 (2015) nr. C pages 6 p.
Year: 2015
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 23 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands