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                                       Details for article 11 of 24 found articles
 
 
  Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects
 
 
Title: Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects
Author: Pesic, Iliya
Navarro, Dondee
Miyake, Masataka
Miura-Mattausch, Mitiko
Appeared in: Solid-state electronics
Paging: Volume 101 (2014) nr. C pages 5 p.
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 24 found articles
 
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