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                                       Details for article 20 of 74 found articles
 
 
  Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications
 
 
Title: Characterization of moving bits (MBs) and QBD in wet/dry tunnel oxides for floating gate type nonvolatile memory (FG-NVM) applications
Author: Ackaert, Jan
Lowe, Antony
Boonen, Sylvie
Yao, Thierry
Rayhem, Joseph
Desoete, Bart
Prasad, Jagdish
Thomason, Mike
Van Houdt, Jan
Degraeve, Robin
Haspeslagh, Luc
Hendrickx, Paul
Appeared in: Solid-state electronics
Paging: Volume 48 (2004) nr. 10-11 pages 5 p.
Year: 2004
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 20 of 74 found articles
 
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