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                                       Details for article 71 of 184 found articles
 
 
  High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD
 
 
Title: High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD
Author: Zhang, Zhicheng
Xiao, Yao
Wang, Jun
Miao, Pei
Liu, Heng
Cheng, Yang
Gou, Yudan
Wang, Sha
Deng, Guoliang
Zhou, Shouhuan
Appeared in: Journal of luminescence
Paging: Volume 263 () nr. C pages p.
Year: 2023
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 71 of 184 found articles
 
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