Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy
Titel:
Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy
Auteur:
Al Huwayz, M. Galeti, H.V.A. Lemine, O.M. Ibnaouf, K.H. Alkaoud, A. Alaskar, Y. Salhi, A. Alhassan, S. Alotaibi, S. Almalki, A. Almunyif, A. Alhassni, A. Jameel, D.A. Gobato, Y. Galvão Henini, M.