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Journal description
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Details for article 48 of 77 found articles
| Title: |
Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction |
| Author: |
Shi, Kaiju Li, Hongbin Xu, Mingsheng Li, Changfu Wei, Yehui Xu, Xiangang Ji, Ziwu |
| Appeared in: |
Journal of luminescence |
| Paging: | Volume 223 () nr. C pages p. |
| Year: |
2020 |
| Contents: | |
| Publisher: |
Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 48 of 77 found articles
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