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                                       Details for article 23 of 74 found articles
 
 
  H− ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dots
 
 
Title: H− ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dots
Author: Sreekumar, R.
Mandal, A.
Chakrabarti, S.
Gupta, S.K.
Appeared in: Journal of luminescence
Paging: Volume 153 (2014) nr. C pages 9 p.
Year: 2014
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 23 of 74 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands