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                                       Details for article 35 of 137 found articles
 
 
  Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy
 
 
Title: Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy
Author: Nitta, Shugo
Yamamoto, Jun
Koyama, Yoshihisa
Ban, Yuzaburoh
Wakao, Kiyohide
Takahashi, Kiyoshi
Appeared in: Journal of crystal growth
Paging: Volume 272 (2004) nr. 1-4 pages 6 p.
Year: 2004
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 35 of 137 found articles
 
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