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  Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum
 
 
Title: Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum
Author: Oyama, Yutaka
Ohno, Takeo
Suto, Ken
Nishizawa, Jun-ichi
Appeared in: Journal of crystal growth
Paging: Volume 259 (2003) nr. 1-2 pages 8 p.
Year: 2003
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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