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                                       Details for article 12 of 25 found articles
 
 
  High mobility formation of p-type Al doped ZnO:N films annealed under NH3 ambient
 
 
Title: High mobility formation of p-type Al doped ZnO:N films annealed under NH3 ambient
Author: Kalyanaraman, S.
Thangavel, R.
Vettumperumal, R.
Appeared in: Journal of physics and chemistry of solids
Paging: Volume 74 (2013) nr. 3 pages 5 p.
Year: 2013
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 25 found articles
 
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