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Journal description
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Details for article 40 of 54 found articles
| Title: |
Non-volatile memory field effect transistor composed of ferroelectric Mn-doped InP thin films and single-layer MoS2 channel |
| Author: |
Kim, Minsoo Son, Jong Yeog |
| Appeared in: |
Journal of physics and chemistry of solids |
| Paging: | Volume 188 () nr. C pages p. |
| Year: |
2024 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 40 of 54 found articles
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