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Journal description
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Details for article 21 of 45 found articles
| Title: |
Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors |
| Author: |
Luo, Xin Cui, Peng Linewih, Handoko Cheong, Kuan Yew Xu, Mingsheng Chen, Siheng Wang, Liu Sun, Jiuji Dai, Jiacheng Xu, Xiangang Han, Jisheng |
| Appeared in: |
Journal of physics and chemistry of solids |
| Paging: | Volume 187 () nr. C pages p. |
| Year: |
2024 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 21 of 45 found articles
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