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                                       Details for article 18 of 47 found articles
 
 
  Etching mechanism and atomic structure of H-Si(111) surfaces prepared in NH4F
 
 
Title: Etching mechanism and atomic structure of H-Si(111) surfaces prepared in NH4F
Author: Allongue, P.
Kieling, V.
Gerischer, H.
Appeared in: Electrochimica acta
Paging: Volume 40 (1995) nr. 10 pages 1353-1360
Year: 1995
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 18 of 47 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands