On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers
Titel:
On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers
Auteur:
Pavunny, Shojan P. Myers-Ward, Rachael L. Daniels, Kevin M. Shi, Wendy Sridhara, Karthik DeJarld, Matthew T. Boyd, Anthony K. Kub, Francis J. Kohl, Paul A. Carter, Samuel G. Gaskill, D. Kurt