| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Comparison of N+ Type and P+ Type Polysilicon Gate in High Speed Non-Volatile Memories
|
Kim, Moon Kyung
|
|
|
997 |
1 |
|
artikel
|
| 2 |
Adhesion of Crystalline GeSbTe/TiN Interface Characterized by Four Point Bend, Nanoindentation, and Nanoscratch
|
Wei, guohua
|
|
|
997 |
1 |
|
artikel
|
| 3 |
A Proposal of a Parallel Resistance Model for the Conduction Mechanism of Binary Transition Metal Oxide ReRAM
|
Kinoshita, Kentaro
|
|
|
997 |
1 |
|
artikel
|
| 4 |
Characteristics of N-doped Sb2Te3 Films by X-ray Diffraction and Resistance Measurement for Phase-change Memory
|
Yin, You
|
|
|
997 |
1 |
|
artikel
|
| 5 |
Characterization of Sn, Zn, In, and Sb-Containing GeSe Alloys for Phase-Change Electronic Memory Applications
|
Campbell, Kristy A.
|
|
|
997 |
1 |
|
artikel
|
| 6 |
Charging Model of a Si Nanocrystal-based Floating Gate in a Quantum Flash Memory
|
Leriche, Bertrand
|
|
|
997 |
1 |
|
artikel
|
| 7 |
Deposition Of Uniform Size Metallic Nanoparticles For Use In Non Volatile Memories
|
Verrelli, Emanuele
|
|
|
997 |
1 |
|
artikel
|
| 8 |
Dielectric Characteristics of Donor Doped Nonlead Ba(Cu1/3Nb2/3)O3 Perovskite Material Synthesized by Microwave-assisted Citrate-nitrate Sol-gel Route
|
Manavbasi, Alp
|
|
|
997 |
1 |
|
artikel
|
| 9 |
Effects of mass, energy and temperature on amorphization in ion implanted Ge2Sb2Te5 thin films
|
De Bastiani, Riccardo
|
|
|
997 |
1 |
|
artikel
|
| 10 |
Electrical Properties of CuTCNQ Based Organic Memories Targeting Integration in the CMOS Back End-of-Line
|
Mueller, Robert
|
|
|
997 |
1 |
|
artikel
|
| 11 |
Electrical Study of Ferromagnet Metal Gate MOS Diode: Towards a Magnetic Memory Cell Integrated on Silicon
|
Kanoun, Mehdi
|
|
|
997 |
1 |
|
artikel
|
| 12 |
Energy Band States of an Oxygen-doped GeSbTe Phase-change Memory Cell; Mechanism of Low-voltage Operation
|
Fujisaki, Yoshihisa
|
|
|
997 |
1 |
|
artikel
|
| 13 |
Femtosecond Laser Structuring of As2S3 Glass for Erasable and Permanent Optical Memory
|
Juodkazis, Saulius
|
|
|
997 |
1 |
|
artikel
|
| 14 |
Formation of Ge Nanocrystals in Lu2O3 High-k Dielectric and its Application in NonVolatile Memory Device
|
Chan, Mei Yin
|
|
|
997 |
1 |
|
artikel
|
| 15 |
Ge2Sb2Te5 Film Deposition and Properties
|
Ye, Mengqi
|
|
|
997 |
1 |
|
artikel
|
| 16 |
HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition
|
Chen, Pang Shiu
|
|
|
997 |
1 |
|
artikel
|
| 17 |
In situ SEM Observation of Grain Formation and Growth Induced by Electrical Pulses in Lateral Ge2Sb2Te5 Phase-change Memory
|
Yin, You
|
|
|
997 |
1 |
|
artikel
|
| 18 |
Investigation of Magnetic Behaviour of Mechanical Activation Derived Multiferroic BiFeO3
|
Garg, Ashish
|
|
|
997 |
1 |
|
artikel
|
| 19 |
Investigation of Resistive Switching at SrRuO3/Cr-doped SrZrO3/Metal Junctions
|
Lee, Hwan-Soo
|
|
|
997 |
1 |
|
artikel
|
| 20 |
ITO-Channel Ferroelectric-Gate Thin Film Transistor with Large On/off Current Ratio
|
Tokumitsu, Eisuke
|
|
|
997 |
1 |
|
artikel
|
| 21 |
Localized Charge Trapping Memory Cells in a 63 nm Generation with Nanoscale Epitaxial Cobalt Salicide Buried Bitlines
|
Mueller, Torsten
|
|
|
997 |
1 |
|
artikel
|
| 22 |
Making Plastic Remember: Electrically Rewritable Polymer Memory Devices
|
Prime, Dominic
|
|
|
997 |
1 |
|
artikel
|
| 23 |
Materials Challenges in Automotive Embedded Non-Volatile Memories
|
Prinz, Erwin Josef
|
|
|
997 |
1 |
|
artikel
|
| 24 |
Memory Devices Based on Solid Electrolytes
|
Kozicki, Michael N.
|
|
|
997 |
1 |
|
artikel
|
| 25 |
Memory Effect in Organic Diodes Containing Self-assembled Gold Nanoparticles
|
Wang, Hai Ping
|
|
|
997 |
1 |
|
artikel
|
| 26 |
Memory window in ferroelectric PVDF copolymer gate integrated MOSFET devices for nondestructive readout memory application
|
Lim, Sang-Hyun
|
|
|
997 |
1 |
|
artikel
|
| 27 |
Metal-Organic Chemical Vapor Deposition (MOCVD) of GeSbTe-Based Chalcogenide Thin Films
|
Tompa, Gary S.
|
|
|
997 |
1 |
|
artikel
|
| 28 |
New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction
|
Naitoh, Yasuhisa
|
|
|
997 |
1 |
|
artikel
|
| 29 |
No Interfacial Layer for PEDOT Electrodes on PVDF: Characterization of Reactions at the Interface P(VDF/TrFE)/Al and P(VDF/TrFE)/PEDOT:PSS
|
Mueller, Klaus
|
|
|
997 |
1 |
|
artikel
|
| 30 |
Nonvolatile Memory Device Based On Nanoparticle Functionalized Tobacco Mosaic Virus
|
Tsai, Chunglin
|
|
|
997 |
1 |
|
artikel
|
| 31 |
Nonvolatile Resistive Switching Devices Based on Nanoscale Metal/Amorphous Silicon/Crystalline Silicon Junctions
|
Jo, Sung Hyun
|
|
|
997 |
1 |
|
artikel
|
| 32 |
Organic- and Bio-Based Digital Memory Devices
|
Tseng, Ricky J.
|
|
|
997 |
1 |
|
artikel
|
| 33 |
Oxide-nitride-oxide Dielectric Stacks with Embedded Si-nanoparticles Fabricated by Low-energy Ion-beam-synthesis
|
Ioannou-Sougleridis, Vassilis
|
|
|
997 |
1 |
|
artikel
|
| 34 |
Oxygen Bonding in Bismuth Layered Compounds SrBi2Ta2O9
|
Su, Dong
|
|
|
997 |
1 |
|
artikel
|
| 35 |
Phase-Change Nanowires for Non Volatile Memory
|
Cui, Yi
|
|
|
997 |
1 |
|
artikel
|
| 36 |
Preparation of Ge2Sb2Te5 Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Patterns
|
Kikuchi, Shin
|
|
|
997 |
1 |
|
artikel
|
| 37 |
Recent Progress in Ferroelectric Random Access Memory Technology
|
Ishiwara, Hiroshi
|
|
|
997 |
1 |
|
artikel
|
| 38 |
Reproducible Resistance Switching in Ni/NiO/Ni Trilayer
|
Shima, Hisashi
|
|
|
997 |
1 |
|
artikel
|
| 39 |
Resistance Non-volatile Memory — RRAM
|
Ignatiev, Alex
|
|
|
997 |
1 |
|
artikel
|
| 40 |
Resistance Switching In Ferroelectric Materials
|
Li, Tingkai
|
|
|
997 |
1 |
|
artikel
|
| 41 |
Reversible Multi-level Resistance Switching of Ag-La0.7Ca0.3MnO3-Pt Heterostructures
|
Shang, Dashan
|
|
|
997 |
1 |
|
artikel
|
| 42 |
RRAM electronics and Switching Mechanism
|
Hsu, Sheng Teng
|
|
|
997 |
1 |
|
artikel
|
| 43 |
Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory
|
Zhu, Yan
|
|
|
997 |
1 |
|
artikel
|
| 44 |
Silicon Nanocluster Formation by a Pulse-type Gas Feeding Technique in the LPCVD System for the Nonvolatile Memory Applications
|
Kim, Kyoungmin
|
|
|
997 |
1 |
|
artikel
|
| 45 |
Sol-Gel Synthesis and Characterization of BiFeO3-PbTiO3 Thin Films
|
Garg, Ashish
|
|
|
997 |
1 |
|
artikel
|
| 46 |
Spectroscopic Ellipsometry Studies of Tb-doped SiO2 Thin Films
|
Feng, Zhe Chuan
|
|
|
997 |
1 |
|
artikel
|
| 47 |
Stress and Mechanical Constants Characterizations of Phase-change SbTe-alloys: Influence of the Film Thickness and Substrate
|
Lisoni, Judit
|
|
|
997 |
1 |
|
artikel
|
| 48 |
Study of the Effect of Metal/Semiconductor Interface Properties on a Resistance Switching Device
|
Villafuerte, Manuel
|
|
|
997 |
1 |
|
artikel
|
| 49 |
The Effects of the LDD process on Short-channel effects in Nanoscale Charge Trapping Devices
|
Kim, Moon Kyung
|
|
|
997 |
1 |
|
artikel
|
| 50 |
The Optical and Electrical Properties of SiOx (x<2) Thin Films Prepared by Pulsed Laser Deposition Technique
|
Park, Byoung Youl
|
|
|
997 |
1 |
|
artikel
|
| 51 |
The Study on Charge-trapping Mechanism in Nitride Storage Flash Memory Device
|
Wu, Jia-Lin
|
|
|
997 |
1 |
|
artikel
|
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