nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Excited Multiplets of Eu in GaN
|
Hourahine, Ben |
|
|
1290 |
1 |
|
artikel |
2 |
Ferromagnetism in lightly Gd doped GaN: The role of defects
|
Mishra, J. K. |
|
|
1290 |
1 |
|
artikel |
3 |
First-principles Study of Nitrogen Vacancies in GdN
|
Punya, Atchara |
|
|
1290 |
1 |
|
artikel |
4 |
Ga1-xGdxN-Based Spin Polarized Light Emitting Diode
|
Jamil, Muhammad |
|
|
1290 |
1 |
|
artikel |
5 |
Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics
|
Asahi, H. |
|
|
1290 |
1 |
|
artikel |
6 |
Morphology and Magneto-optical Properties of Amorphous AlN Films Doped with Nickel
|
Jadwisienczak, W. M. |
|
|
1290 |
1 |
|
artikel |
7 |
Site Dependence of Electronic Structure of Gd Impurities in GaN
|
Cheiwchanchamnangij, Tawinan |
|
|
1290 |
1 |
|
artikel |
8 |
Structural, Magnetic and Electronic Properties of Dilute MnScN(001) Grown by RF Nitrogen Plasma Molecular Beam Epitaxy
|
Constantin, Costel |
|
|
1290 |
1 |
|
artikel |
9 |
Structural Properties of Iron Nitride on Cu(100): an Ab-initio Molecular Dynamics study
|
Heryadi, Dodi |
|
|
1290 |
1 |
|
artikel |
10 |
Zeeman splittings of the5D0–7F2 transitions of Eu3+ ions implanted into GaN
|
Kachkanov, V. |
|
|
1290 |
1 |
|
artikel |