| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Blue Photoluminescence of (ZnO)0.92(InN)0.08
|
Matsushima, Koichi
|
|
|
2 |
5 |
p. 277-282
|
artikel
|
| 2 |
Corundum-Structured α-In2O3 as a Wide-Bandgap Semiconductor for Electrical Devices
|
Kaneko, Kentaro
|
|
|
2 |
5 |
p. 301-307
|
artikel
|
| 3 |
Development of a New Electrochemical Method for Preparation of Titanium Dioxides Films from an Aqueous Solution
|
Ishizaki, Hiroki
|
|
|
2 |
5 |
p. 295-300
|
artikel
|
| 4 |
Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization
|
Iwasaki, Kazuya
|
|
|
2 |
5 |
p. 265-270
|
artikel
|
| 5 |
Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor
|
Lu, Jing
|
|
|
2 |
5 |
p. 329-334
|
artikel
|
| 6 |
Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates
|
Hens, Philip
|
|
|
2 |
5 |
p. 289-294
|
artikel
|
| 7 |
Hydrogen passivation of vacancies in diamond: Electronic structure and stability from ab initio calculations
|
Czelej, Kamil
|
|
|
2 |
5 |
p. 309-314
|
artikel
|
| 8 |
Optical Properties of Germanium Doped Cubic GaN
|
As, Donat J.
|
|
|
2 |
5 |
p. 283-288
|
artikel
|
| 9 |
Pulsed Laser Deposition of Epitaxial ZnSxSe1-x Thin Films for Waveguiding Applications in Mid-IR Active Multilayered Structures
|
Lindsey, Zachary R.
|
|
|
2 |
5 |
p. 315-321
|
artikel
|
| 10 |
Structural and Optical Properties of Al0.30Ga0.70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy
|
Brummer, Gordie
|
|
|
2 |
5 |
p. 271-276
|
artikel
|
| 11 |
Temperature-dependent Optical Properties of AlN Thin Films by Spectroscopy Ellipsometry
|
Liu, Yao
|
|
|
2 |
5 |
p. 323-328
|
artikel
|
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