| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel diffusion barrier using oxygen stopping layer for high density FRAM
|
Song, Yoon J.
|
|
2000
|
31 |
1-4 |
p. 351-358
|
artikel
|
| 2 |
Application of fluorinated SiO2 interlayer dielectrics for ferroelectric memory
|
Park, Youngsoo
|
|
2000
|
31 |
1-4 |
p. 241-250
|
artikel
|
| 3 |
Atomic-scale microstructures of SrBi2Ta2O9 (SBT) ferroelectric thin films prepared by MOD and PLD for ferams applications
|
Zhu, Xinhua
|
|
2000
|
31 |
1-4 |
p. 195-203
|
artikel
|
| 4 |
Bottom electrode and barrier materials issues in stacked capacitor type ferroelectric memories
|
Norga, Gerd J.
|
|
2000
|
31 |
1-4 |
p. 205-212
|
artikel
|
| 5 |
Bottom electrode structures of Pt/Ru and Ru deposited on polycrystalline silicon by MOCVD for DRAM capacitor
|
Choi, Eun-Suck
|
|
2000
|
31 |
1-4 |
p. 297-304
|
artikel
|
| 6 |
Characterization of lead cation-incorporated strontium bismuth tantalate ferroelectrics
|
Lu, Chung-Hsin
|
|
2000
|
31 |
1-4 |
p. 129-138
|
artikel
|
| 7 |
Crystalline and optical properties of PLZT films prepared by pulsed laser deposition
|
Kao, Jiann-Shiun
|
|
2000
|
31 |
1-4 |
p. 69-75
|
artikel
|
| 8 |
Degradation mechanisms of SrBi2Ta2O9 ferroelectric thin film capacitors during forming gas annealing
|
Hartner, Walter
|
|
2000
|
31 |
1-4 |
p. 341-350
|
artikel
|
| 9 |
Degradation of Pt/PLZT/Pt capacitors caused by hydrogen in interlayer dielectrics
|
Suenaga, Kazufumi
|
|
2000
|
31 |
1-4 |
p. 323-331
|
artikel
|
| 10 |
Deposition of large-area graded (Pb1-xLax)TiO3 thin films by pulsed laser depesition
|
Jamn, Gwo
|
|
2000
|
31 |
1-4 |
p. 77-86
|
artikel
|
| 11 |
Effect of ion damage on the crystallization of PZT thin films
|
Park, Eung-Chul
|
|
2000
|
31 |
1-4 |
p. 173-181
|
artikel
|
| 12 |
Effects of Ti/Ir top electrodes of PZT capacitors on the hydrogen related degradation
|
Kim, Jiyoung
|
|
2000
|
31 |
1-4 |
p. 367-376
|
artikel
|
| 13 |
Electrical characterizations of MgTiO3 thin films grown on Si
|
Ahn, Soonhong
|
|
2000
|
31 |
1-4 |
p. 359-366
|
artikel
|
| 14 |
Excimer laser ablation processed ferroelectric and antiferroelectric thin films
|
Krupanidhi, S. B.
|
|
2000
|
31 |
1-4 |
p. 1-12
|
artikel
|
| 15 |
Fabrication of double metal feram without degradation of remnant polarization by using Ir/IrOx capacitor contact barrier layer
|
Kweon, Soon Yong
|
|
2000
|
31 |
1-4 |
p. 251-259
|
artikel
|
| 16 |
Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition
|
Cho, Choong-Rae
|
|
2000
|
31 |
1-4 |
p. 35-45
|
artikel
|
| 17 |
Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices
|
Shin, Hyunjung
|
|
2000
|
31 |
1-4 |
p. 163-171
|
artikel
|
| 18 |
Forming gas annealing effects on the microstructure and ferroelectricity of SrBi2Ta2O9 thin films prepared by metalorganic decomposition
|
Yu, Tao
|
|
2000
|
31 |
1-4 |
p. 333-339
|
artikel
|
| 19 |
Growth and characterization of epitaxial SrBi2Ta2O9 films on (110) SrTiO3 substrates
|
Garg, Ashish
|
|
2000
|
31 |
1-4 |
p. 13-21
|
artikel
|
| 20 |
Growth of MgTiO3 thin films by pulsed laser deposition and their electrical properties
|
Kang, Shinchung
|
|
2000
|
31 |
1-4 |
p. 97-104
|
artikel
|
| 21 |
Guest editorial
|
Waser, Rainer
|
|
2000
|
31 |
1-4 |
p. 9-10
|
artikel
|
| 22 |
Influence of process conditions on the ferroelectric characteristics of SrBi2Ta2O9 films prepared by rf magnetron sputtering
|
Chen, Yi-Chou
|
|
2000
|
31 |
1-4 |
p. 87-96
|
artikel
|
| 23 |
Integration of H2 barriers for ferroelectric memories based on SrBi2Ta2O9 (SBT)
|
Hartner, Walter
|
|
2000
|
31 |
1-4 |
p. 273-284
|
artikel
|
| 24 |
Lithium niobate thick films grown by rf sputtering: Correlation between optical analysis and transmission electron microscopy observations
|
Lansiaux, X.
|
|
2000
|
31 |
1-4 |
p. 105-116
|
artikel
|
| 25 |
Low temperature processing and chacterization of SrBi2Nb2o9 thin films grown by pulsed laser ablation
|
Bhattacharyya, S.
|
|
2000
|
31 |
1-4 |
p. 57-67
|
artikel
|
| 26 |
Mechanisms of Pb(zr0.53Ti0.47)O3 thin film etching with ECR/RF reactor
|
Baborowski, J.
|
|
2000
|
31 |
1-4 |
p. 261-271
|
artikel
|
| 27 |
Mocvd growth and characterization of PbTiO3 thin films on Pt/Ti/SiO2/Si substrates
|
Moret, M. P.
|
|
2000
|
31 |
1-4 |
p. 305-314
|
artikel
|
| 28 |
Nano-phase ferroelectric cells for Gbit memories
|
Scott, J. F.
|
|
2000
|
31 |
1-4 |
p. 139-147
|
artikel
|
| 29 |
Novel diffusion control process using ultra thin buffer layer for MFIS memory
|
Otsuka, Takashi
|
|
2000
|
31 |
1-4 |
p. 117-127
|
artikel
|
| 30 |
Oxidation resistance of TaSiN diffusion barriers
|
Letendu, F.
|
|
2000
|
31 |
1-4 |
p. 315-322
|
artikel
|
| 31 |
Patterning of noble metal electrodes and oxygen barriers by CMP
|
Schnabel, R. F.
|
|
2000
|
31 |
1-4 |
p. 233-240
|
artikel
|
| 32 |
Preparation of SrBi2(Ta, Nb)2O9 thin films by rf sputtering for ferroelectric memory production
|
Masuda, Takeshi
|
|
2000
|
31 |
1-4 |
p. 23-33
|
artikel
|
| 33 |
Processing and properties of nanocrystalline Pb(Sc0.5Ta0.5)O3, Pb(Sc0.5nb0.5)O3 and Pb(Mg1/3Nb2/3)O3 films produced by RF-sputtering from ceramic targets
|
Ziebert, Carlos
|
|
2000
|
31 |
1-4 |
p. 183-193
|
artikel
|
| 34 |
Process variations in use for the first generations of FRAM® memory products
|
Davenport, Tom
|
|
2000
|
31 |
1-4 |
p. 213-231
|
artikel
|
| 35 |
Properties of reactively sputtered IrOx for PZT electrode applications
|
Fox, Glen R.
|
|
2000
|
31 |
1-4 |
p. 47-56
|
artikel
|
| 36 |
Pulse-extended excimer laser annealing of lead zirconate titanate thin films
|
Donohue, P. P.
|
|
2000
|
31 |
1-4 |
p. 285-296
|
artikel
|
| 37 |
Single-grained PZT thin films for high level FRAM integration—fabrication and characterization
|
Lee, Jang-Sik
|
|
2000
|
31 |
1-4 |
p. 149-162
|
artikel
|
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