| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of tunable Ba1-xSrxTiO3 thin film capacitors prepared by rf-sputtering and liquid-phase deposition
|
Outzourhit, Abdelkader
|
|
1995
|
|
4 |
p. 227-241
|
artikel
|
| 2 |
Aging and fatigue in bulk ferroelectric perovskite ceramics
|
Arlt, G.
|
|
1993
|
|
4 |
p. 343-349
|
artikel
|
| 3 |
An aqueous, low temperature process for synthesizing PZT(53,47) thin films
|
Lin, Chhiu-Tsu
|
|
1993
|
|
4 |
p. 333-341
|
artikel
|
| 4 |
Anomalous fatigue behavior in Zn doped PZT
|
Melnick, B. M.
|
|
1993
|
|
4 |
p. 293-300
|
artikel
|
| 5 |
An optical probe for ferroelectric thin film memory capacitors
|
Thakoor, Sarita
|
|
1994
|
|
4 |
p. 333-340
|
artikel
|
| 6 |
A review of: “FERROELECTRIC THIN FILMS: SYNTHESIS AND BASIC PROPERTIES. Volume 10 Series Ferroelectricity and Related Phenomena. Editors: Carlos Paz de Araujo, James F. Scott and George W. Taylor. Gordon and Breach Publishers, Amsterdam, The Netherlands 1996. ix 580 pp. ISBN 2-88449-197-X Paperback $79 (US), ISBN 2-88449-189-9 Cloth $139 (US).”
|
Zuleeg, Rainer
|
|
1996
|
|
4 |
p. 257-258
|
artikel
|
| 7 |
A theory of polarization reversals in finite systems
|
Ishibashi, Yoshihiro
|
|
1993
|
|
4 |
p. 351-354
|
artikel
|
| 8 |
Barrier mechanism of Pt/Ta and Pt/Ti layers for SrTiO3 thin film capacitors on Si
|
Takemura, Koichi
|
|
1994
|
|
4 |
p. 305-313
|
artikel
|
| 9 |
Characteristics of barium magnesium fluoride (BMF) based MIS capacitors and mfsfets
|
Kalkur, T. S.
|
|
1994
|
|
4 |
p. 357-364
|
artikel
|
| 10 |
Characterization of conduction in PZT thin films produced by laser ablation deposition
|
Chen, X.
|
|
1993
|
|
4 |
p. 355-363
|
artikel
|
| 11 |
Comparison of properties between rapid thermally processed and conventional furnace pyrolyzed plzt thin films
|
Dausch, D. E.
|
|
1994
|
|
4 |
p. 311-320
|
artikel
|
| 12 |
Composition measurement of paraelectric SrTiO3 layer
|
Hara, Tohru
|
|
1994
|
|
4 |
p. 345-350
|
artikel
|
| 13 |
Deposition of Ba1-xSrxTiO3 and SrTiO3 via liquid source CVD (LSCVD) for ULSI DRAMS
|
McMillan, L. D.
|
|
1994
|
|
4 |
p. 319-324
|
artikel
|
| 14 |
Electrochemical models of failure in oxide perovskites
|
Desu, Seshu B.
|
|
1993
|
|
4 |
p. 365-376
|
artikel
|
| 15 |
Electrodes for ferroelectric thin films
|
Al-Shareef, H. N.
|
|
1993
|
|
4 |
p. 321-332
|
artikel
|
| 16 |
Epitaxy and interfacial phase in thin films of lead scandium tantalate deposited by reactive sputtering on a platinum interlayer
|
Meekison, C. D.
|
|
1995
|
|
4 |
p. 283-291
|
artikel
|
| 17 |
Fatigue, rejuvenation and self-restoring in ferroelectric thin films
|
Pawlaczyk, Cz.
|
|
1995
|
|
4 |
p. 293-316
|
artikel
|
| 18 |
Ferroelectric ceramics and thin films for pyroelectric applications
|
Tossell, D. A.
|
|
1993
|
|
4 |
p. 301-308
|
artikel
|
| 19 |
Ferroelectric electrode interactions in BaTiO3 and PZT thin films
|
Bell, J. M.
|
|
1994
|
|
4 |
p. 325-332
|
artikel
|
| 20 |
Ferroelectric lead iron-chromium-nickel niobate films
|
Kumar, Vasant C. V. R.
|
|
1995
|
|
4 |
p. 251-265
|
artikel
|
| 21 |
Ferroelectric properties and reliability of La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on si for non-volatile memory applications
|
Lee, J.
|
|
1995
|
|
4 |
p. 317-333
|
artikel
|
| 22 |
Ferroelectric properties of plzt thin films prepared by mocvd
|
Tominaga, Koji
|
|
1994
|
|
4 |
p. 287-291
|
artikel
|
| 23 |
High frequency fatiguing of ferroelectric capacitors
|
Abt, Norman E.
|
|
1994
|
|
4 |
p. 349-355
|
artikel
|
| 24 |
How to extract information about domain kinetics in thin ferroelectric films from switching transient current data
|
Shur, V. Ya.
|
|
1994
|
|
4 |
p. 293-301
|
artikel
|
| 25 |
Imprint testing of ferroelectric capacitors used for non-volatile memories
|
Dat, R.
|
|
1994
|
|
4 |
p. 275-286
|
artikel
|
| 26 |
Influence of deposition parameters on physico-chemical and optical properties of sputtered PbTiO3 thin films
|
Jaber, B.
|
|
1996
|
|
4 |
p. 225-237
|
artikel
|
| 27 |
Influence of the growth temperature on the epitaxial quality of PbTiO3 films deposited in-situ by sputtering
|
Jaber, B.
|
|
1996
|
|
4 |
p. 215-224
|
artikel
|
| 28 |
Landau theory of thin ferroelectric films
|
Brennan, Ciaran
|
|
1995
|
|
4 |
p. 335-346
|
artikel
|
| 29 |
May-leonard oscillations in ferroelectric thermal lenses
|
Scott, J. F.
|
|
1993
|
|
4 |
p. 377-382
|
artikel
|
| 30 |
Measurement and simulation of partial switching in ferroelectric PZT thin-films
|
Clark, Lawrence T.
|
|
1993
|
|
4 |
p. 309-320
|
artikel
|
| 31 |
Molecularly modified alkoxide precursors (MMAP) for thin film LiTaO3 and PbTiO3
|
Phule, Pradeep P.
|
|
1994
|
|
4 |
p. 315-318
|
artikel
|
| 32 |
Observations of sol-gel deposited lead zirconium titanate films using transmission electron microscopy and X-ray diffraction
|
Beanland, R.
|
|
1996
|
|
4 |
p. 179-194
|
artikel
|
| 33 |
Photo-mechanic-ferroelectric effect in crystals of batio3 type
|
Grekov, A. A.
|
|
1994
|
|
4 |
p. 351-359
|
artikel
|
| 34 |
Preparation and properties of sputtered lead titanate thin films on MgO single crystals and mgo buffer layers
|
Neumann, N.
|
|
1995
|
|
4 |
p. 243-250
|
artikel
|
| 35 |
Preparation of ferroelectric thin films for Si-based devices
|
Kim, Ho-Gi
|
|
1994
|
|
4 |
p. 371-381
|
artikel
|
| 36 |
Programmable mass-memory based on a voltage variable capacitor utilizing a ferroelectric thin film deposited on single crystal silicon
|
Lapin, I. P.
|
|
1994
|
|
4 |
p. 339-344
|
artikel
|
| 37 |
Pyroelectric properties of lead titanate thin films deposited on pt-coated si wafers by multi-target sputtering
|
Pachaly, B.
|
|
1994
|
|
4 |
p. 333-338
|
artikel
|
| 38 |
PZT thin films by multiple target reactive sputtering
|
Toyama, Motoo
|
|
1994
|
|
4 |
p. 341-348
|
artikel
|
| 39 |
Short-time switching of polarization in thin ferroelectric films
|
Baginsky, I. L.
|
|
1996
|
|
4 |
p. 195-202
|
artikel
|
| 40 |
Space charge capacitance of ferroelectric memory cells in the nonlinear regime
|
Carrico, A. S.
|
|
1996
|
|
4 |
p. 247-256
|
artikel
|
| 41 |
Sputtered PZT films for ferroelectric devices
|
Bruchhaus, Rainer
|
|
1994
|
|
4 |
p. 365-370
|
artikel
|
| 42 |
Structure and properties of sol-gel processed (Pb,La)TiO3 ferroelectric thin films
|
Meidong, Liu
|
|
1994
|
|
4 |
p. 303-310
|
artikel
|
| 43 |
The structure and dielectric properties of thin PZT-type ferroelectric films with a diffuse phase transition
|
Surowiak, Z.
|
|
1995
|
|
4 |
p. 267-282
|
artikel
|
| 44 |
Thick film fabrication of ferroelectric phase shifter materials
|
Sengupta, L. C.
|
|
1996
|
|
4 |
p. 203-214
|
artikel
|
| 45 |
Thin film LiNbO3 for integrated optic devices
|
Huang, Charles H. -J.
|
|
1994
|
|
4 |
p. 293-304
|
artikel
|
| 46 |
Thin films of novel ferroelectric composites
|
Sengupta, S.
|
|
1996
|
|
4 |
p. 239-245
|
artikel
|
| 47 |
Transmission electron microscopy observations of sol-gel derived ferroelectric PbZrO3-PbTiO3 thin films with excess PbO
|
Modak, A. R.
|
|
1994
|
|
4 |
p. 321-331
|
artikel
|
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