| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced simulation tool for FeRAM design
|
Chen, Zheng
|
|
2001
|
|
1-5 |
p. 101-112
|
artikel
|
| 2 |
Analysis of read-out operation in 1T2C-type ferroelectric memory cell
|
Ogasawara, Satoru
|
|
2001
|
|
1-5 |
p. 83-92
|
artikel
|
| 3 |
An improved behavioral model of ferroelectric capacitors
|
Li, Chun-Xiao
|
|
2001
|
|
1-5 |
p. 93-100
|
artikel
|
| 4 |
A nonvolatile single ferro fet memory concept with disturbance free operation scheme
|
Ullmann, Marc
|
|
2001
|
|
1-5 |
p. 23-29
|
artikel
|
| 5 |
A novel cell and array architecture for fet-type Ferroelectric nonvolatile memories
|
Zhang, Wu-Quan
|
|
2001
|
|
1-5 |
p. 15-22
|
artikel
|
| 6 |
Asymmetric capacitance-voltage characteristics of (Bi3.25, La0.75)Ti3O12 thin films grown on Si
|
Choi, Taekjib
|
|
2001
|
|
1-5 |
p. 225-234
|
artikel
|
| 7 |
Characterization of the CeO2 thin films for insulation layer and Pt/SrBi2Ta2O9/CeO2/Si MFISFET structure
|
Park, Sang-Shik
|
|
2001
|
|
1-5 |
p. 191-199
|
artikel
|
| 8 |
Circuit design issues affecting present and future deep sub-micron ferroelectric random-access memories
|
Rickes, Jurgen T.
|
|
2001
|
|
1-5 |
p. 65-82
|
artikel
|
| 9 |
Circuits simulation of switch devices furnished with gain cell combined to FeRAM
|
Koyama, Shinzo
|
|
2001
|
|
1-5 |
p. 113-121
|
artikel
|
| 10 |
Data disturb characteristics of 1T2C ferroelectric memory array
|
Yoon, Sung-Min
|
|
2001
|
|
1-5 |
p. 31-40
|
artikel
|
| 11 |
Deterioration of device characteristics of MFSFET due to fatigue
|
Lee, Kook Pyo
|
|
2001
|
|
1-5 |
p. 235-244
|
artikel
|
| 12 |
Effect of leakage current through ferroelectric and insulator on retention characteristics of metal-ferroelectric-insulator-semiconductor structure
|
Takahashi, Mitsue
|
|
2001
|
|
1-5 |
p. 125-134
|
artikel
|
| 13 |
Effects of Ar post-annealing on the electrical properties of Pt/YMnO3/p-Si and Pt/YMnO3/Y2O3/p-Si
|
Yun, Kwi Young
|
|
2001
|
|
1-5 |
p. 163-170
|
artikel
|
| 14 |
Effects of nitridation treatments for SBT/Ta2O5 stack gate capacitors
|
Min, Hyungseob
|
|
2001
|
|
1-5 |
p. 211-218
|
artikel
|
| 15 |
Electronic model of a Ferroelectric Field Effect transistor
|
Macleod, Todd C.
|
|
2001
|
|
1-5 |
p. 55-64
|
artikel
|
| 16 |
Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory
|
Migita, S.
|
|
2001
|
|
1-5 |
p. 135-143
|
artikel
|
| 17 |
Fabrication of MFIS diodes using sol-gel derived SBT films and LaAlO3 buffer layers
|
Park, Byung-Eun
|
|
2001
|
|
1-5 |
p. 201-209
|
artikel
|
| 18 |
Ferroelectric nonvolatile logic
|
Eliason, Jarrod
|
|
2001
|
|
1-5 |
p. 3-14
|
artikel
|
| 19 |
Guest editorial
|
|
|
2001
|
|
1-5 |
p. 7-8
|
artikel
|
| 20 |
High density and long retention non-destructive readout FeRAM using a linked cell architecture
|
Shimada, Y.
|
|
2001
|
|
1-5 |
p. 41-54
|
artikel
|
| 21 |
Hysteresis caused by defects in buffer layer of metal-ferroelectric-insulator-semiconductor (MFIS) devices
|
Kang, Dongseok
|
|
2001
|
|
1-5 |
p. 245-254
|
artikel
|
| 22 |
Integration and characterization of MFISFET using Pb5Ge3O11
|
Zhang, Fengyan
|
|
2001
|
|
1-5 |
p. 145-154
|
artikel
|
| 23 |
Low-temperature synthesis in vacuum of c-axis oriented ferroelectric YMnO3 thin films using alkoxy-derived precursors
|
Suzuki, Kazuyuki
|
|
2001
|
|
1-5 |
p. 155-162
|
artikel
|
| 24 |
MFIS and MFMIS structures using Pb(Zr, Ti)O3 films for nonvolatile memory devices
|
Park, Jung-Ho
|
|
2001
|
|
1-5 |
p. 181-190
|
artikel
|
| 25 |
Processing and characterization of LiNbO3 thin film for metal Ferroelectric Semiconductor field effect transistor (MFSFET) application
|
Wang, Xuguang
|
|
2001
|
|
1-5 |
p. 171-180
|
artikel
|
| 26 |
Study of Bi2TI2O7-based metal-ferroelectric-semiconductor (MFS) FET
|
Ren, Tian-Ling
|
|
2001
|
|
1-5 |
p. 219-224
|
artikel
|
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