| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high-precision spectrometer for the absolute determination of X-ray absorption edges as calibration standards
|
Stümpel, J.
|
|
1997
|
|
2-4 |
p. 489-500
|
artikel
|
| 2 |
Anomalous X-ray scattering from bulk microdefects
|
Mogilyansky, D.
|
|
1997
|
|
2-4 |
p. 599-607
|
artikel
|
| 3 |
Application of X-ray diffraction in Laue geometry to imperfect near-surface layers
|
Kyutt, R. N.
|
|
1997
|
|
2-4 |
p. 267-275
|
artikel
|
| 4 |
Characterization of microdefects in GaAs crystals with high-resolution X-ray diffractometry
|
Zielińska-Rohozińska, E.
|
|
1997
|
|
2-4 |
p. 625-635
|
artikel
|
| 5 |
Characterization of SiGe HBT-structures by double-and triple-crystal diffractometry
|
Zaumseil, P.
|
|
1997
|
|
2-4 |
p. 361-367
|
artikel
|
| 6 |
Comparison between different X-ray diffraction methods to extract strains in metallic multilayers
|
Labat, S.
|
|
1997
|
|
2-4 |
p. 577-583
|
artikel
|
| 7 |
Contributions of multipole terms to the photoelectric yield in X-ray standing-wave measurements
|
Vartanyants, I. A.
|
|
1997
|
|
2-4 |
p. 617-624
|
artikel
|
| 8 |
Determination of the deformation state of HgSe/ZnTe layers
|
Schäfer, P.
|
|
1997
|
|
2-4 |
p. 339-346
|
artikel
|
| 9 |
Effect of uniaxial stress on the lattice spacing of silicon at low temperatures
|
Kohno, A.
|
|
1997
|
|
2-4 |
p. 293-298
|
artikel
|
| 10 |
Enhanced possibilities of section topography at a third-generation synchrotron radiation facility
|
Medrano, C.
|
|
1997
|
|
2-4 |
p. 195-203
|
artikel
|
| 11 |
Ge δ layer in Si(100) characterized by X-ray reflectivity, grazing incidence diffraction and standing-wave measurements
|
Beck, U.
|
|
1997
|
|
2-4 |
p. 403-410
|
artikel
|
| 12 |
Glancing-incidence X-ray characterization of Nb/Pd multilayers
|
Tagliente, M. A.
|
|
1997
|
|
2-4 |
p. 473-480
|
artikel
|
| 13 |
Grazing-incidence diffraction on LiNbO3 under surface acoustic wave excitation
|
Sauer, W.
|
|
1997
|
|
2-4 |
p. 455-463
|
artikel
|
| 14 |
High-resolution imaging of electronic devices using line modified-asymmetric crystal topography (LM-ACT)
|
Armstrong, R. W.
|
|
1997
|
|
2-4 |
p. 147-152
|
artikel
|
| 15 |
High-resolution X-ray diffraction characterisation of piezoelectric InGaAs/GaAs multiquantum wells and superlattices on (111)B GaAs
|
Sanz-Hervás, A.
|
|
1997
|
|
2-4 |
p. 329-337
|
artikel
|
| 16 |
High-resolution X-ray diffraction from imperfect heterostructures
|
Zolotoyabko, E.
|
|
1997
|
|
2-4 |
p. 385-392
|
artikel
|
| 17 |
High-resolution X-ray diffraction investigation of crystal perfection and relaxation of GaAs/InGaAs/GaAs quantum wells depending on MOVPE growth conditions
|
Zeimer, U.
|
|
1997
|
|
2-4 |
p. 369-376
|
artikel
|
| 18 |
High-resolution X-ray diffraction of silicon at low temperatures
|
Lu, Z.
|
|
1997
|
|
2-4 |
p. 305-311
|
artikel
|
| 19 |
High-resolution X-ray diffraction study of highly mismatched III–V heterostructures by analysis of the layer Bragg peak width
|
Ferrari, C.
|
|
1997
|
|
2-4 |
p. 277-284
|
artikel
|
| 20 |
High-resolution X-ray scattering from CdMnTe/CdTe multiple quantum well structures
|
Li, C. R.
|
|
1997
|
|
2-4 |
p. 447-454
|
artikel
|
| 21 |
Imaging of biological objects in the plane-wave diffraction scheme
|
Ingal, V. N.
|
|
1997
|
|
2-4 |
p. 553-560
|
artikel
|
| 22 |
Improved dynamical theory for X-ray reflectivity of ideal crystals of finite size at low and high incidence angles
|
Caro, L. De
|
|
1997
|
|
2-4 |
p. 521-529
|
artikel
|
| 23 |
Influence of free electrons and point defects on the lattice parameters and thermal expansion of gallium nitride
|
Leszczynski, M.
|
|
1997
|
|
2-4 |
p. 585-590
|
artikel
|
| 24 |
Integrated X-ray substructure analysis of plastically deformed beryllium single crystals
|
May, C.
|
|
1997
|
|
2-4 |
p. 591-598
|
artikel
|
| 25 |
Interface study of W/Si multilayers with increasing number of periods
|
Jergel, M.
|
|
1997
|
|
2-4 |
p. 439-445
|
artikel
|
| 26 |
Interference effects in Bragg-case synchrotron section topography of elastically bent silicon implanted crystals
|
Wieteska, K.
|
|
1997
|
|
2-4 |
p. 233-239
|
artikel
|
| 27 |
Investigation of the interface roughness of GaAs single quantum wells by X-ray diffractometry, reflectivity and diffuse scattering
|
Jenichen, B.
|
|
1997
|
|
2-4 |
p. 429-438
|
artikel
|
| 28 |
Kinetic properties of dislocations in semiconductors revealed by X-ray topography
|
Sumino, K.
|
|
1997
|
|
2-4 |
p. 137-146
|
artikel
|
| 29 |
Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques
|
Zhuang, Y.
|
|
1997
|
|
2-4 |
p. 377-383
|
artikel
|
| 30 |
Modelling imperfections of epitaxial heterostructures by means of X-ray diffraction analysis
|
Liu, Q.
|
|
1997
|
|
2-4 |
p. 299-304
|
artikel
|
| 31 |
Monolithic devices for high-resolution X-ray diffractometry and topography
|
Korytár, D.
|
|
1997
|
|
2-4 |
p. 481-488
|
artikel
|
| 32 |
New methods for depth profiling of heterostructures by X-ray diffraction
|
Möller, M. O.
|
|
1997
|
|
2-4 |
p. 321-328
|
artikel
|
| 33 |
Pendellösung fringes of silicon at low temperatures
|
Soejima, Y.
|
|
1997
|
|
2-4 |
p. 347-353
|
artikel
|
| 34 |
Phase-contrast hard X-ray microtomography by Bragg-Fresnel optics
|
Hartman, Y.
|
|
1997
|
|
2-4 |
p. 571-576
|
artikel
|
| 35 |
Photoelectrons in X-ray standing-wave technique: potentialities in crystal subsurface layer investigation
|
Mukhamedzhanov, E. Kh.
|
|
1997
|
|
2-4 |
p. 501-511
|
artikel
|
| 36 |
Quantitative analysis of screw dislocations in 6H−SiC single crystals
|
Dudley, M.
|
|
1997
|
|
2-4 |
p. 153-164
|
artikel
|
| 37 |
Reciprocal space mapping for semiconductor substrates and device heterostructures
|
Goorsky, Mark S.
|
|
1997
|
|
2-4 |
p. 257-266
|
artikel
|
| 38 |
Reciprocal space mapping on Si1−xCx epilayers and Sin/C/Sin superlattices
|
Stangl, J.
|
|
1997
|
|
2-4 |
p. 355-360
|
artikel
|
| 39 |
Reduction of misfit dislocation density in strained Inx Gal−x As heterostructures via growth on patterned GaAs (001) substrate
|
Zeng, W.
|
|
1997
|
|
2-4 |
p. 241-246
|
artikel
|
| 40 |
Regimes of X-ray phase-contrast imaging with perfect crystals
|
Gureyev, T. E.
|
|
1997
|
|
2-4 |
p. 545-552
|
artikel
|
| 41 |
Study of residual strains in wafer crystals by means of lattice tilt mapping
|
Ferrari, C.
|
|
1997
|
|
2-4 |
p. 165-173
|
artikel
|
| 42 |
Synchrotron X-ray topographic study of strain in silicon wafers with integrated circuits
|
Karilahti, M.
|
|
1997
|
|
2-4 |
p. 181-184
|
artikel
|
| 43 |
The images of misfit dislocations in Bragg-case synchrotron section topography
|
Wierzchowski, W.
|
|
1997
|
|
2-4 |
p. 227-232
|
artikel
|
| 44 |
Treatment of the heat-load—associated contrast in synchrotron radiation topography
|
Zontone, F.
|
|
1997
|
|
2-4 |
p. 247-256
|
artikel
|
| 45 |
Triple-axis diffractometry on GaN/Al2O3(001) and AlN/Al2O3(001) using a parabolically curved graded multilayer as analyzer
|
Stömmer, R.
|
|
1997
|
|
2-4 |
p. 465-472
|
artikel
|
| 46 |
Triple-axis X-ray diffraction study of polishing damage in III-V semiconductors
|
Moore, C. D.
|
|
1997
|
|
2-4 |
p. 205-212
|
artikel
|
| 47 |
Wave-optical description of X-ray phase contrast images of weakly absorbing non-crystalline objects
|
Bushuev, V. A.
|
|
1997
|
|
2-4 |
p. 513-520
|
artikel
|
| 48 |
X-ray diffraction peak profiles from heteroepitaxial structures with misfit dislocations
|
Kaganer, V. M.
|
|
1997
|
|
2-4 |
p. 285-292
|
artikel
|
| 49 |
X-ray diffraction study of porous silicon layers etched on (111)-orientedp+ substrate
|
Kowalski, G.
|
|
1997
|
|
2-4 |
p. 561-570
|
artikel
|
| 50 |
X-ray diffraction study on the correlation between ordered domains size and ordering degree in InGaP/GaAs alloy layers
|
Francesio, L.
|
|
1997
|
|
2-4 |
p. 537-543
|
artikel
|
| 51 |
X-ray dynamical diffraction on superlattice with unequal layer thicknesses
|
Dyshekov, A. A.
|
|
1997
|
|
2-4 |
p. 531-536
|
artikel
|
| 52 |
X-ray investigation of strain-compensated GaAs: C/AlAs: C distributed Bragg reflectors
|
Mazuelas, A.
|
|
1997
|
|
2-4 |
p. 313-320
|
artikel
|
| 53 |
X-ray reflectivity reciprocal space mapping of strained SiGe/Si superlattices
|
Holý, V.
|
|
1997
|
|
2-4 |
p. 419-428
|
artikel
|
| 54 |
X-ray scattering from thin organic films and multilayers
|
Pietsch, U.
|
|
1997
|
|
2-4 |
p. 393-402
|
artikel
|
| 55 |
X-ray specular reflectivity and grazing incidence X-ray diffraction of new Langmuir-Blodgett multilayers
|
Giannini, C.
|
|
1997
|
|
2-4 |
p. 411-417
|
artikel
|
| 56 |
X-ray study of GaAs/Ge heterostructures: relationship between interfacial defects and growth process
|
Putero, M.
|
|
1997
|
|
2-4 |
p. 213-217
|
artikel
|
| 57 |
X-ray topographic investigation of tungstate flux-grown KTiOAsO4 crystals
|
Liu, W. J.
|
|
1997
|
|
2-4 |
p. 185-193
|
artikel
|
| 58 |
X-ray topographic studies of organic and non-linear optical materials
|
Halfpenny, P. J.
|
|
1997
|
|
2-4 |
p. 123-135
|
artikel
|
| 59 |
X-ray topographic study of twins in NdxY(1−x)Al3(BO3)4 crystal
|
Hu, X. B.
|
|
1997
|
|
2-4 |
p. 175-180
|
artikel
|
| 60 |
X-ray topography of complicated cross-section sapphire shaped crystals
|
Shul’pina, I. L.
|
|
1997
|
|
2-4 |
p. 219-225
|
artikel
|
| 61 |
XRPD application for laser-treated surface of Fe-based alloys study
|
Nedolya, A. V.
|
|
1997
|
|
2-4 |
p. 609-615
|
artikel
|
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