| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A focal plane array detector based on a variband isotype P-p junction in MCT layers grown by molecular beam epitaxy
|
Vasilyev, V. V.
|
|
2007
|
43 |
4 |
p. 308-313
|
artikel
|
| 2 |
A microwave detector based on an MCT photodiode for subthermonuclear plasma research
|
Vasilyev, V. V.
|
|
2007
|
43 |
4 |
p. 299-307
|
artikel
|
| 3 |
Fast IR spectrograph (0.5–3.0 μm) based on a hybrid 1 × 384 InAs module
|
Bazovkin, V. M.
|
|
2007
|
43 |
4 |
p. 332-336
|
artikel
|
| 4 |
Growing HgTe/Cd0.735Hg0.265Te quantum wells by molecular beam epitaxy
|
Dvoretsky, S. A.
|
|
2007
|
43 |
4 |
p. 375-381
|
artikel
|
| 5 |
Infrared focal plane array based on GaAs/AlGaAs quantum-well multilayer structures
|
Esaev, D. G.
|
|
2007
|
43 |
4 |
p. 382-387
|
artikel
|
| 6 |
Infrared focal plane array time delay-integration readout circuit
|
Lee, I. I.
|
|
2007
|
43 |
4 |
p. 337-341
|
artikel
|
| 7 |
Method for determining critical pressure in assembling hybrid MCT focal plane arrays
|
Efimov, V. M.
|
|
2007
|
43 |
4 |
p. 370-374
|
artikel
|
| 8 |
Multielement hybrid IR FPA based on charge-injected devices: Part II. Thermography systems with InAs elements
|
Lee, I. I.
|
|
2007
|
43 |
4 |
p. 322-331
|
artikel
|
| 9 |
Multielement hybrid IR FPA based on charge-injected devices: Part I. Principles of signal readout
|
Lee, I. I.
|
|
2007
|
43 |
4 |
p. 314-321
|
artikel
|
| 10 |
Peculiarities of admittance in MOS structures based on MBE-grown MCT layers
|
Yartsev, A. V.
|
|
2007
|
43 |
4 |
p. 358-362
|
artikel
|
| 11 |
Reverse current in p-n junctions with a field electrode on heteroepitaxial CdHgTe/GaAs structures
|
Ovsyuk, V. N.
|
|
2007
|
43 |
4 |
p. 363-369
|
artikel
|
| 12 |
320 × 256 Silicon multiplexers for IR focal plane arrays based on MCT diodes
|
Kozlov, A. I.
|
|
2007
|
43 |
4 |
p. 351-357
|
artikel
|
| 13 |
Submillimeter matrix photosensitive device on PbSnTe : In films
|
Akimov, A. N.
|
|
2007
|
43 |
4 |
p. 342-350
|
artikel
|
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