| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Ab initio calculations of the electron spectrum and density of states of TlFeS2 and TlFeSe2 crystals
|
Ismayilova, N. A.
|
|
2017
|
51 |
4 |
p. 473-476
|
article
|
| 2 |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures
|
Slapovskiy, D. N.
|
|
2017
|
51 |
4 |
p. 438-443
|
article
|
| 3 |
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism
|
Ulin, V. P.
|
|
2017
|
51 |
4 |
p. 458-472
|
article
|
| 4 |
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions
|
Pashkovskii, A. B.
|
|
2017
|
51 |
4 |
p. 430-437
|
article
|
| 5 |
Effect of gamma irradiation on the photoluminescence of porous silicon
|
Elistratova, M. A.
|
|
2017
|
51 |
4 |
p. 483-487
|
article
|
| 6 |
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide
|
Marchenko, A. V.
|
|
2017
|
51 |
4 |
p. 449-453
|
article
|
| 7 |
Electron mobility in the inversion layers of fully depleted SOI films
|
Zaitseva, E. G.
|
|
2017
|
51 |
4 |
p. 423-429
|
article
|
| 8 |
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
|
Khabibullin, R. A.
|
|
2017
|
51 |
4 |
p. 514-519
|
article
|
| 9 |
In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
|
Guseynov, R. R.
|
|
2017
|
51 |
4 |
p. 524-530
|
article
|
| 10 |
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy
|
Filatov, D. O.
|
|
2017
|
51 |
4 |
p. 536-541
|
article
|
| 11 |
Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation
|
Kurova, I. A.
|
|
2017
|
51 |
4 |
p. 417-419
|
article
|
| 12 |
On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes
|
Emelianov, A. V.
|
|
2017
|
51 |
4 |
p. 488-491
|
article
|
| 13 |
On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–xSbx (0.07 ≤ x ≤ 0.2)
|
Muntyanu, F. M.
|
|
2017
|
51 |
4 |
p. 413-416
|
article
|
| 14 |
Optical transparency of graphene layers grown on metal surfaces
|
Rut’kov, E. V.
|
|
2017
|
51 |
4 |
p. 492-497
|
article
|
| 15 |
Optimization of vertical cavity lasers with intracavity metal layers
|
Lazarenko, A. A.
|
|
2017
|
51 |
4 |
p. 520-523
|
article
|
| 16 |
Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer
|
Mikhailenko, I. V.
|
|
2017
|
51 |
4 |
p. 498-502
|
article
|
| 17 |
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling
|
Vexler, M. I.
|
|
2017
|
51 |
4 |
p. 444-448
|
article
|
| 18 |
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe
|
Kozhukhov, A. S.
|
|
2017
|
51 |
4 |
p. 420-422
|
article
|
| 19 |
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments
|
Zegrya, G. G.
|
|
2017
|
51 |
4 |
p. 477-482
|
article
|
| 20 |
Silicon nanowire array architecture for heterojunction electronics
|
Solovan, M. M.
|
|
2017
|
51 |
4 |
p. 542-548
|
article
|
| 21 |
Specific features of ZnCdS nanoparticles synthesized in different solvents
|
Kyazym-zade, A. G.
|
|
2017
|
51 |
4 |
p. 454-457
|
article
|
| 22 |
Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment
|
Yafarov, R. K.
|
|
2017
|
51 |
4 |
p. 531-535
|
article
|
| 23 |
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates
|
Galiev, G. B.
|
|
2017
|
51 |
4 |
p. 503-508
|
article
|
| 24 |
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
|
Ponomarev, D. S.
|
|
2017
|
51 |
4 |
p. 509-513
|
article
|
Journal description