| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
An origin of orange (2 eV) photoluminescence in SiO2 films implanted with high Si+-ion doses
|
Tyschenko, I. E.
|
|
2015
|
49 |
9 |
p. 1176-1180
|
article
|
| 2 |
Characterization of field-emission cathodes based on graphene films on SiC
|
Konakova, R. V.
|
|
2015
|
49 |
9 |
p. 1242-1245
|
article
|
| 3 |
Characterization of the spatial inhomogeneity of heterointerfaces in GaAs/AlGaAs quantum wells by photoreflectance spectroscopy
|
Avakyants, L. P.
|
|
2015
|
49 |
9 |
p. 1202-1206
|
article
|
| 4 |
Controlled exciton transfer between quantum dots with acoustic phonons taken into account
|
Golovinski, P. A.
|
|
2015
|
49 |
9 |
p. 1191-1196
|
article
|
| 5 |
Defect-related luminescence in silicon p+–n junctions
|
Kuzmin, R. V.
|
|
2015
|
49 |
9 |
p. 1222-1225
|
article
|
| 6 |
Effect of catalytic surface modification on the gas sensitivity of SnO2 + 3% SiO2 films
|
Rembeza, S. I.
|
|
2015
|
49 |
9 |
p. 1237-1241
|
article
|
| 7 |
Effect of hydrogen on the electrical characteristics of structural elements of the Pt/WOx/6H-SiC
|
Zuev, V. V.
|
|
2015
|
49 |
9 |
p. 1226-1236
|
article
|
| 8 |
Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD)
|
Kozlovski, V. V.
|
|
2015
|
49 |
9 |
p. 1163-1165
|
article
|
| 9 |
Effect of plastic deformation on the magnetic properties and dislocation luminescence of isotopically enriched silicon 29Si:B
|
Koplak, O. V.
|
|
2015
|
49 |
9 |
p. 1140-1144
|
article
|
| 10 |
Electrical breakdown in nominally undoped n-Ge and p-Ge samples under interband photoexcitation
|
Bannaya, V. F.
|
|
2015
|
49 |
9 |
p. 1160-1162
|
article
|
| 11 |
Features of the electrical conductivity of TlInSe2 under photoexcitation and X-ray excitation
|
Madatov, R. S.
|
|
2015
|
49 |
9 |
p. 1166-1169
|
article
|
| 12 |
Laser interferometric method for determining the carrier diffusion length in semiconductors
|
Manukhov, V. V.
|
|
2015
|
49 |
9 |
p. 1119-1124
|
article
|
| 13 |
Low-temperature galvanomagnetic studies of nominally undoped germanium subjected to intrinsic photoexcitation
|
Bannaya, V. F.
|
|
2015
|
49 |
9 |
p. 1154-1159
|
article
|
| 14 |
Negative differential conductivity in n-Si structures with contacts asymmetric in area
|
Musaev, A. M.
|
|
2015
|
49 |
9 |
p. 1125-1128
|
article
|
| 15 |
On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects
|
Bondarenko, V. B.
|
|
2015
|
49 |
9 |
p. 1187-1190
|
article
|
| 16 |
On the band gap of Cu2ZnSn(SxSe1–x)4 alloys
|
Bodnar, I. V.
|
|
2015
|
49 |
9 |
p. 1145-1148
|
article
|
| 17 |
On the cascade capture of electrons at donors in GaAs quantum wells
|
Aleshkin, V. Ya.
|
|
2015
|
49 |
9 |
p. 1197-1201
|
article
|
| 18 |
On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN
|
Medvedev, O. S.
|
|
2015
|
49 |
9 |
p. 1181-1186
|
article
|
| 19 |
On the tensoresistance of n-Ge and n-Si crystals with radiation-induced defects
|
Gaidar, G. P.
|
|
2015
|
49 |
9 |
p. 1129-1133
|
article
|
| 20 |
Optical properties of ion-doped ZnO(Se) layers in the context of band anticrossing theory
|
Morozova, N. K.
|
|
2015
|
49 |
9 |
p. 1134-1139
|
article
|
| 21 |
Photodetectors based on single-walled carbon nanotubes and thiamonomethinecyanine J-aggregates on flexible substrates
|
Fedorov, I. V.
|
|
2015
|
49 |
9 |
p. 1246-1251
|
article
|
| 22 |
Photoluminescence of heterostructures containing an InxGa1–xAs quantum well with a high in content at different excitation powers
|
Lavrukhin, D. V.
|
|
2015
|
49 |
9 |
p. 1218-1221
|
article
|
| 23 |
Photoluminescence properties of modulation-doped InxAl1–xAs/InyGa1–yAs/InxAl1–xAs structures with strained inas and gaas nanoinserts in the quantum well
|
Galiev, G. B.
|
|
2015
|
49 |
9 |
p. 1207-1217
|
article
|
| 24 |
Specific features of the optical and photoelectric properties of nanocrystalline indium oxide
|
Forsh, E. A.
|
|
2015
|
49 |
9 |
p. 1149-1153
|
article
|
| 25 |
Temperature dependence of the carrier lifetime in narrow-gap CdxHg1–xTe solid solutions: Radiative recombination
|
Bazhenov, N. L.
|
|
2015
|
49 |
9 |
p. 1170-1175
|
article
|
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