| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters
|
Soldatenkov, F. Y.
|
|
2011
|
45 |
9 |
p. 1219-1226
|
artikel
|
| 2 |
An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT
|
Pu, Jinrong
|
|
2011
|
45 |
9 |
p. 1205-1210
|
artikel
|
| 3 |
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles
|
Tsai, Jung-Hui
|
|
2011
|
45 |
9 |
p. 1231-1233
|
artikel
|
| 4 |
Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons
|
Lebedev, A. A.
|
|
2011
|
45 |
9 |
p. 1145-1147
|
artikel
|
| 5 |
Defect structure of CdxHg1 − xTe films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment
|
Izhnin, I. I.
|
|
2011
|
45 |
9 |
p. 1124-1128
|
artikel
|
| 6 |
Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
|
Vinokurov, D. A.
|
|
2011
|
45 |
9 |
p. 1227-1230
|
artikel
|
| 7 |
Distribution of CdSe nanoparticles synthesized in porous SiOx matrix
|
Bacherikov, Yu. Yu.
|
|
2011
|
45 |
9 |
p. 1189-1193
|
artikel
|
| 8 |
Effect of iron impurities on the photoluminescence and photoconductivity of ZnSe crystals in the visible spectral region
|
Vaksman, Yu. F.
|
|
2011
|
45 |
9 |
p. 1129-1132
|
artikel
|
| 9 |
Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals
|
Korbutyak, D. V.
|
|
2011
|
45 |
9 |
p. 1133-1139
|
artikel
|
| 10 |
Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures
|
Vasil’evskii, I. S.
|
|
2011
|
45 |
9 |
p. 1169-1172
|
artikel
|
| 11 |
Electron states in single-layer graphene containing short-range defects: The potential separable in the momentum representation
|
Ktitorov, S. A.
|
|
2011
|
45 |
9 |
p. 1199-1204
|
artikel
|
| 12 |
Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface
|
Erofeev, E. V.
|
|
2011
|
45 |
9 |
p. 1148-1152
|
artikel
|
| 13 |
Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties
|
Vasil’evskii, I. S.
|
|
2011
|
45 |
9 |
p. 1158-1163
|
artikel
|
| 14 |
Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy
|
Filatov, D. O.
|
|
2011
|
45 |
9 |
p. 1111-1116
|
artikel
|
| 15 |
Optical properties of quantum-confined heterostructures based on GaPxNyAs1 − x − y alloys
|
Egorov, A. Yu.
|
|
2011
|
45 |
9 |
p. 1164-1168
|
artikel
|
| 16 |
Photoluminescence in silicon implanted with silicon ions at amorphizing doses
|
Sobolev, N. A.
|
|
2011
|
45 |
9 |
p. 1140-1144
|
artikel
|
| 17 |
Protonic metallization of the monoclinic phase in VO2 films
|
Ilinskiy, A. V.
|
|
2011
|
45 |
9 |
p. 1153-1157
|
artikel
|
| 18 |
Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K
|
Shaldin, Yu. V.
|
|
2011
|
45 |
9 |
p. 1117-1123
|
artikel
|
| 19 |
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT
|
Lenka, T. R.
|
|
2011
|
45 |
9 |
p. 1211-1218
|
artikel
|
| 20 |
Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots
|
Tselikov, G. I.
|
|
2011
|
45 |
9 |
p. 1173-1176
|
artikel
|
| 21 |
Spectra of optical parameters in bulk and film amorphous alloys of the Se95As5 system containing samarium (Sm) impurities
|
Djalilov, N. Z.
|
|
2011
|
45 |
9 |
p. 1177-1182
|
artikel
|
| 22 |
Synthesis of the lead, arsenic, and bismuth chalcogenides with liquid encapsulation
|
Tallerchik, B. A.
|
|
2011
|
45 |
9 |
p. 1242-1245
|
artikel
|
| 23 |
The distribution of an electric field in p-n junctions of silicon edgeless detectors
|
Eremin, V. K.
|
|
2011
|
45 |
9 |
p. 1234-1241
|
artikel
|
| 24 |
Thermoelectric properties of bismuth telluride nanocomposites with fullerene
|
Kulbachinskii, V. A.
|
|
2011
|
45 |
9 |
p. 1194-1198
|
artikel
|
| 25 |
XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates
|
Lenshin, A. S.
|
|
2011
|
45 |
9 |
p. 1183-1188
|
artikel
|
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