| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anodization of nanoscale Si layers in silicon-on-insulator structures
|
Antonov, V. A.
|
|
2011
|
45 |
8 |
p. 1089-1093
|
artikel
|
| 2 |
Calculation of the electron structure of vacancies and their compensated states in III-VI semiconductors
|
Mehrabova, M. A.
|
|
2011
|
45 |
8 |
p. 998-1005
|
artikel
|
| 3 |
Dielectric and transport properties of thin films precipitated from sols with silicon nanoparticles
|
Kononov, N. N.
|
|
2011
|
45 |
8 |
p. 1038-1048
|
artikel
|
| 4 |
Dispersion of the refractive index of epitaxial Pb1 − xEuxTe (0 ≤ x ≤ 1) alloy layers below the absorption edge
|
Pashkeev, D. A.
|
|
2011
|
45 |
8 |
p. 980-987
|
artikel
|
| 5 |
Doping of the Bi1.9Sb0.1Te3 solid solution with Sn impurity
|
Zhitinskaya, M. K.
|
|
2011
|
45 |
8 |
p. 988-992
|
artikel
|
| 6 |
Eddy currents appearing in a p-n junction in a high microwave field
|
Shamirzaev, S. H.
|
|
2011
|
45 |
8 |
p. 1035-1037
|
artikel
|
| 7 |
Electrical properties of thin-film composites based on silicon and polypropylene
|
Gasanli, Sh. M.
|
|
2011
|
45 |
8 |
p. 1085-1088
|
artikel
|
| 8 |
Electronic states in epitaxial graphene fabricated on silicon carbide
|
Davydov, S. Yu.
|
|
2011
|
45 |
8 |
p. 1070-1076
|
artikel
|
| 9 |
Fabrication technology of heterojunctions in the lattice of a 2D photonic crystal based on macroporous silicon
|
Zharova, Yu. A.
|
|
2011
|
45 |
8 |
p. 1103-1110
|
artikel
|
| 10 |
Ga2O3 films formed by electrochemical oxidation
|
Kalygina, V. M.
|
|
2011
|
45 |
8 |
p. 1097-1102
|
artikel
|
| 11 |
Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties
|
Golubok, A. O.
|
|
2011
|
45 |
8 |
p. 1049-1052
|
artikel
|
| 12 |
Mechanisms of charge transport in anisotype n-TiO2/p-CdTe heterojunctions
|
Brus, V. V.
|
|
2011
|
45 |
8 |
p. 1077-1081
|
artikel
|
| 13 |
Photoluminescence in silicon implanted with erbium ions at an elevated temperature
|
Sobolev, N. A.
|
|
2011
|
45 |
8 |
p. 1006-1008
|
artikel
|
| 14 |
Photosensitive thin-film In/p-PbxSn1 − xS Schottky barriers: Fabrication and properties
|
Gremenok, V. F.
|
|
2011
|
45 |
8 |
p. 1053-1058
|
artikel
|
| 15 |
Photosensitized generation of singlet oxygen in powders and aqueous suspensions of silicon nanocrystals
|
Ryabchikov, Yu. V.
|
|
2011
|
45 |
8 |
p. 1059-1063
|
artikel
|
| 16 |
Piezoelectric effect in GaAs nanowires
|
Soshnikov, I. P.
|
|
2011
|
45 |
8 |
p. 1082-1084
|
artikel
|
| 17 |
Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field
|
Sobolev, M. M.
|
|
2011
|
45 |
8 |
p. 1064-1069
|
artikel
|
| 18 |
Studies of the mobility of charge carriers in low-dimensional systems in a transverse DC electric field
|
Sinyavskii, E. P.
|
|
2011
|
45 |
8 |
p. 1032-1034
|
artikel
|
| 19 |
Study of optical parameters of the Se-As chalcogenide semiconductor system containing EuF3 impurities
|
Isayev, A. I.
|
|
2011
|
45 |
8 |
p. 993-997
|
artikel
|
| 20 |
Study of the influence of the sulfide and ultraviolet treatment of the n-i-GaAs surface on the parameters of ohmic contacts
|
Avdeev, S. M.
|
|
2011
|
45 |
8 |
p. 1026-1031
|
artikel
|
| 21 |
Superionic conductivity in TlGaTe2 crystals
|
Sardarli, R. M.
|
|
2011
|
45 |
8 |
p. 975-979
|
artikel
|
| 22 |
The nature of electrical interaction of Schottky contacts
|
Torkhov, N. A.
|
|
2011
|
45 |
8 |
p. 1009-1025
|
artikel
|
| 23 |
Treatment of the surface of blanks for fabrication of CdZnTe-based detectors
|
Fedorenko, O. A.
|
|
2011
|
45 |
8 |
p. 1094-1096
|
artikel
|
Tijdschrift beschrijving