| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation
|
Ivanov, P. A.
|
|
2011
|
45 |
10 |
p. 1306-1310
|
artikel
|
| 2 |
Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers
|
Slipchenko, S. O.
|
|
2011
|
45 |
10 |
p. 1378-1385
|
artikel
|
| 3 |
Band gap of CdTe and Cd0.9Zn0.1Te crystals
|
Kosyachenko, L. A.
|
|
2011
|
45 |
10 |
p. 1273-1280
|
artikel
|
| 4 |
Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
|
Vinokurov, D. A.
|
|
2011
|
45 |
10 |
p. 1364-1368
|
artikel
|
| 5 |
Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structure
|
Degheidy, A. R.
|
|
2011
|
45 |
10 |
p. 1251-1257
|
artikel
|
| 6 |
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer
|
Altuntas, H.
|
|
2011
|
45 |
10 |
p. 1286-1290
|
artikel
|
| 7 |
Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures
|
Semenov, A. N.
|
|
2011
|
45 |
10 |
p. 1327-1333
|
artikel
|
| 8 |
Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions
|
Kachurin, G. A.
|
|
2011
|
45 |
10 |
p. 1311-1316
|
artikel
|
| 9 |
Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature
|
Grigoryev, M. M.
|
|
2011
|
45 |
10 |
p. 1334-1338
|
artikel
|
| 10 |
I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier
|
Ivanov, P. A.
|
|
2011
|
45 |
10 |
p. 1374-1377
|
artikel
|
| 11 |
Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layers
|
Agekyan, V. F.
|
|
2011
|
45 |
10 |
p. 1301-1305
|
artikel
|
| 12 |
Main features of photostimulated ion transport in heterojunctions based on mixed ion-electron (hole) conductors and the model of a thin-film ion accelerator
|
Stetsun, A. I.
|
|
2011
|
45 |
10 |
p. 1291-1296
|
artikel
|
| 13 |
Nucleation of CdTe islands during synthesis from the vapor phase on a cooled substrate
|
Belyaev, A. P.
|
|
2011
|
45 |
10 |
p. 1297-1300
|
artikel
|
| 14 |
On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures
|
Ivanov, A. M.
|
|
2011
|
45 |
10 |
p. 1369-1373
|
artikel
|
| 15 |
Optical spectra of six silicon phases
|
Sobolev, V. V.
|
|
2011
|
45 |
10 |
p. 1247-1250
|
artikel
|
| 16 |
Photoelectric properties of porous GaN/SiC heterostructures
|
Mynbaeva, M. G.
|
|
2011
|
45 |
10 |
p. 1317-1320
|
artikel
|
| 17 |
Photophysical and electrical properties of polyphenylquinolines containing carbazole or indolo[3,2-b]carbazole fragments as new optoelectronic materials
|
Svetlichnyi, V. M.
|
|
2011
|
45 |
10 |
p. 1339-1345
|
artikel
|
| 18 |
Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density
|
Khabibullin, R. A.
|
|
2011
|
45 |
10 |
p. 1321-1326
|
artikel
|
| 19 |
Simulation of optical properties of silicon solar cells textured with penetrating V-shaped grooves
|
Untila, G. G.
|
|
2011
|
45 |
10 |
p. 1357-1363
|
artikel
|
| 20 |
Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes
|
Veinger, A. I.
|
|
2011
|
45 |
10 |
p. 1264-1272
|
artikel
|
| 21 |
Structure and magnetic properties of InSe single crystals intercalated by nickel
|
Stakhira, I. M.
|
|
2011
|
45 |
10 |
p. 1258-1263
|
artikel
|
| 22 |
Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures
|
Tikhomirov, V. G.
|
|
2011
|
45 |
10 |
p. 1352-1356
|
artikel
|
| 23 |
The effect of Sn impurity on the optical and structural properties of thin silicon films
|
Voitovych, V. V.
|
|
2011
|
45 |
10 |
p. 1281-1285
|
artikel
|
| 24 |
Tin impurity centers in glassy germanium chalcogenides
|
Bordovsky, G. A.
|
|
2011
|
45 |
10 |
p. 1346-1351
|
artikel
|
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