| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD
|
Vinokurov, D. A.
|
|
2009
|
43 |
9 |
p. 1213-1216
|
artikel
|
| 2 |
Behavior of the phonon replicas of the acceptor-bound exciton’s recombination line in GaAs/AlGaAs quantum wells
|
Petrov, P. V.
|
|
2009
|
43 |
9 |
p. 1174-1176
|
artikel
|
| 3 |
Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen
|
Putuato, M. A.
|
|
2009
|
43 |
9 |
p. 1235-1239
|
artikel
|
| 4 |
Eddy currents in the p–n junction in a microwave field
|
Shamirzaev, S. H.
|
|
2009
|
43 |
9 |
p. 1170-1173
|
artikel
|
| 5 |
Effect of a high electric field on the conductivity of MnGa2S4, MnIn2S4, and MnGaInS4 single crystals
|
Niftiev, N. N.
|
|
2009
|
43 |
9 |
p. 1131-1133
|
artikel
|
| 6 |
Effect of the magnetic phase transition on the charge transport in layered semiconductor ferromagnets TlCrS2 and TlCrSe2
|
Veliyev, R. G.
|
|
2009
|
43 |
9 |
p. 1134-1137
|
artikel
|
| 7 |
Electrical properties of In2Se3 single crystals and photosensitivity of Al/In2Se3 Schottky barriers
|
Bodnar, I. V.
|
|
2009
|
43 |
9 |
p. 1138-1141
|
artikel
|
| 8 |
Electronic properties and pinning of the Fermi level in irradiated II–IV–V2 semiconductors
|
Brudnyi, V. N.
|
|
2009
|
43 |
9 |
p. 1146-1154
|
artikel
|
| 9 |
Electron spectrum and scattering of charge carriers in PbTe:(Na + Te)
|
Prokofieva, L. V.
|
|
2009
|
43 |
9 |
p. 1155-1158
|
artikel
|
| 10 |
Experimental 4H-SiC junction-barrier Schottky (JBS) diodes
|
Ivanov, P. A.
|
|
2009
|
43 |
9 |
p. 1209-1212
|
artikel
|
| 11 |
Features of the mechanisms of generation and “Healing” of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn
|
Romaka, V. A.
|
|
2009
|
43 |
9 |
p. 1115-1123
|
artikel
|
| 12 |
Flow of the current along metallic shunts in ohmic contacts to wide-gap III–V semiconductors
|
Blank, T. V.
|
|
2009
|
43 |
9 |
p. 1164-1169
|
artikel
|
| 13 |
Formation of phases in the films of a Ag-In-Se system
|
Ismayilov, D. I.
|
|
2009
|
43 |
9 |
p. 1111-1114
|
artikel
|
| 14 |
Generation efficiency of single-photon current pulses in the Geiger mode of silicon avalanche photodiodes
|
Verkhovtseva, A. V.
|
|
2009
|
43 |
9 |
p. 1205-1208
|
artikel
|
| 15 |
Integrated diagnostics of heterostructures with QW layers
|
Konnikov, S. G.
|
|
2009
|
43 |
9 |
p. 1240-1247
|
artikel
|
| 16 |
Local structure of germanium-sulfur, germanium-selenium, and germanium-tellurium vitreous alloys
|
Bordovsky, G. A.
|
|
2009
|
43 |
9 |
p. 1193-1197
|
artikel
|
| 17 |
Mechanisms of formation of N–S transition in nonisothermal I–V characteristics of a p–i–n diode
|
Gorbatyuk, A. V.
|
|
2009
|
43 |
9 |
p. 1198-1204
|
artikel
|
| 18 |
Nonlinear effects during the growth of semiconductor nanowires
|
Dubrovskii, V. G.
|
|
2009
|
43 |
9 |
p. 1226-1234
|
artikel
|
| 19 |
Optimization of structural perfection of 4H-polytype silicon carbide ingots
|
Avrov, D. D.
|
|
2009
|
43 |
9 |
p. 1248-1254
|
artikel
|
| 20 |
Phase formation under the effect of spinodal decomposition in epitaxial alloys of GaxIn1 − xP/GaAs(100) heterostructures
|
Seredin, P. V.
|
|
2009
|
43 |
9 |
p. 1221-1225
|
artikel
|
| 21 |
Photoelectric signatures of CdZnTe crystals
|
But, A. V.
|
|
2009
|
43 |
9 |
p. 1217-1220
|
artikel
|
| 22 |
Photoluminescence of silicon after deposition of polycrystalline diamond films
|
Aminev, D. F.
|
|
2009
|
43 |
9 |
p. 1159-1163
|
artikel
|
| 23 |
The influence of the magnetic field on the effect of drag of electrons by phonons in n-CdxHg1 − xTe
|
Aliyev, S. A.
|
|
2009
|
43 |
9 |
p. 1142-1145
|
artikel
|
| 24 |
The mechanism of generation of the donor- and acceptor-type defects in the n-TiNiSn semiconductor heavily doped with Co impurity
|
Romaka, V. A.
|
|
2009
|
43 |
9 |
p. 1124-1130
|
artikel
|
| 25 |
The simplest electron-hole complexes localized at longitudinal fluctuations in quantum wires
|
Semina, M. A.
|
|
2009
|
43 |
9 |
p. 1182-1192
|
artikel
|
| 26 |
Transport of electrons in a GaAs quantum well in high electric fields
|
Požela, J.
|
|
2009
|
43 |
9 |
p. 1177-1181
|
artikel
|
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