| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the Photodetector Array Spectrum Using the Influence Function
|
V. P. Fedosov
|
|
2001
|
30 |
4 |
p. 269-273
5 p.
|
artikel
|
| 2 |
Analysis of the Photodetector Array Spectrum Using the Influence Function
|
Fedosov, V. P.
|
|
2001
|
30 |
4 |
p. 269-273
|
artikel
|
| 3 |
Artifacts in Atomic Force Microscopy
|
R. V. Gainutdinov
|
|
2001
|
30 |
4 |
p. 219-224
6 p.
|
artikel
|
| 4 |
Artifacts in Atomic Force Microscopy
|
Gainutdinov, R. V.
|
|
2001
|
30 |
4 |
p. 219-224
|
artikel
|
| 5 |
Artificial Potential Relief in Carbon Films and Associated Heterostructures
|
V. M. Elinson
|
|
2001
|
30 |
4 |
p. 236-242
7 p.
|
artikel
|
| 6 |
Artificial Potential Relief in Carbon Films and Associated Heterostructures
|
Elinson, V. M.
|
|
2001
|
30 |
4 |
p. 236-242
|
artikel
|
| 7 |
Cleaning and Doping of Silicon in a BF3Plasma during Fabrication of Ohmic Contacts
|
A. L. Danilyuk
|
|
2001
|
30 |
4 |
p. 261-266
6 p.
|
artikel
|
| 8 |
Cleaning and Doping of Silicon in a BF3Plasma during Fabrication of Ohmic Contacts
|
Danilyuk, A. L.
|
|
2001
|
30 |
4 |
p. 261-266
|
artikel
|
| 9 |
Comparative Analysis of Scanning Electron Microscopy Techniques for Semiconductors: Electron-Beam-Induced Potential Method, Single-Contact Electron-Beam-Induced Current Method, and Thermoacoustic Detection
|
E. I. Rau
|
|
2001
|
30 |
4 |
p. 207-218
12 p.
|
artikel
|
| 10 |
Comparative Analysis of Scanning Electron Microscopy Techniques for Semiconductors: Electron-Beam-Induced Potential Method, Single-Contact Electron-Beam-Induced Current Method, and Thermoacoustic Detection
|
Rau, E. I.
|
|
2001
|
30 |
4 |
p. 207-218
|
artikel
|
| 11 |
Emitter Current Push-Out Effect under Avalanche Multiplication in the Collector pnJunction
|
V. A. Sergeev
|
|
2001
|
30 |
4 |
p. 254-257
4 p.
|
artikel
|
| 12 |
Emitter Current Push-Out Effect under Avalanche Multiplication in the Collector p–nJunction
|
Sergeev, V. A.
|
|
2001
|
30 |
4 |
p. 254-257
|
artikel
|
| 13 |
Model Analysis of Transients in On-Chip Interconnections
|
S. M. Zakharov
|
|
2001
|
30 |
4 |
p. 245-253
9 p.
|
artikel
|
| 14 |
Model Analysis of Transients in On-Chip Interconnections
|
Zakharov, S. M.
|
|
2001
|
30 |
4 |
p. 245-253
|
artikel
|
| 15 |
On Increasing the Switching Rate in a Single-Domain Magnetooptic Cell
|
V. V. Randoshkin
|
|
2001
|
30 |
4 |
p. 258-260
3 p.
|
artikel
|
| 16 |
On Increasing the Switching Rate in a Single-Domain Magnetooptic Cell
|
Randoshkin, V. V.
|
|
2001
|
30 |
4 |
p. 258-260
|
artikel
|
| 17 |
Rapid Thermal Processing: A New Step Forward in Microelectronics Technologies
|
V. Yu. Kireev
|
|
2001
|
30 |
4 |
p. 225-235
11 p.
|
artikel
|
| 18 |
Rapid Thermal Processing: A New Step Forward in Microelectronics Technologies
|
Kireev, V. Yu.
|
|
2001
|
30 |
4 |
p. 225-235
|
artikel
|
| 19 |
Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel
|
V. A. Gergel'
|
|
2001
|
30 |
4 |
p. 243-244
2 p.
|
artikel
|
| 20 |
Significant Improvement of Transistor Transconductance and Speed by Using a Graded Channel
|
Gergel', V. A.
|
|
2001
|
30 |
4 |
p. 243-244
|
artikel
|
| 21 |
The Effect of Electroactive Defects in the Gate Oxide on the Threshold Voltage of a Submicron MOS Transistor
|
V. Ya. Uritskii
|
|
2001
|
30 |
4 |
p. 267-268
2 p.
|
artikel
|
| 22 |
The Effect of Electroactive Defects in the Gate Oxide on the Threshold Voltage of a Submicron MOS Transistor
|
Uritskii, V. Ya.
|
|
2001
|
30 |
4 |
p. 267-268
|
artikel
|
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