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                             170 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Ab initio Calculation of the Effective Thermal Conductivity Coefficient of a Superlattice Using the Boltzmann Transport Equation Abgaryan, K. K.

8 p. 594-599
artikel
2 Accounting for Heat Release in Small Volumes of Matter on the Example of the Growth of ZnO Microrods: Search for a Modeling Technique Matyushkin, I. V.

8 p. 708-716
artikel
3 Accounting for the Porosity of the Material in the Simulation of the Time-Dependent Dielectric Breakdown in the Metallization System of Integrated Circuits Orlov, A. A.

8 p. 633-636
artikel
4 Activated-process parameters for diamond, silicon, and germanium crystals Magomedov, M. N.
2011
8 p. 567-573
artikel
5 A method for determining the state of the silicon-sapphire boundary in thin silicon-on-sapphire layers Tikhov, S. V.
2013
8 p. 529-531
artikel
6 Analysis and Comparison of Different Approaches to the Extraction of Parameters of the Memristor Model Shamin, E. S.

8 p. 649-653
artikel
7 Analysis of Hydrodynamics in the Synthesis of Crystals from Water-Salt Solutions Prostomolotov, A. I.

8 p. 662-666
artikel
8 A nanodimensional silicon fabricated using HCl: HF: C2H5OH electrolyte Parkhomenko, Yu. N.
2013
8 p. 508-511
artikel
9 A Neutron Source for Studying Biological Objects Formed from Superficially Touching Cones Made of Borated Spheroplastics Siksin, V. V.

8 p. 842-846
artikel
10 A New Generation of Nanocomposite Materials Based on Carbon and Titanium for Use in Supercapacitor Energy Storage Devices Sleptsov, V. V.

8 p. 584-589
artikel
11 Application of Al2O3 Film for Stabilization of the Charge Properties of the SiO2/p-Si Interface Kim, A. S.

8 p. 835-841
artikel
12 Application of Radioactive Isotopes for Beta-Voltaic Generators Bykov, A. S.
2017
8 p. 527-539
artikel
13 Applying Numerical Simulation for the Investigation of Memristor Structures Based on Oxides and Chalcogenides Sirotkin, V. V.

8 p. 562-567
artikel
14 Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters Smirnov, I. S.
2014
8 p. 587-589
artikel
15 Approaches to hydrogenation of silicon tetrachloride in polysilicon manufacture Ivanov, V. M.
2011
8 p. 559-561
artikel
16 Atomic structure and methods for structural investigations how ingot growth conditions of Bi2Te2.7Se0.3 solid solutions influence the physical properties of anisotropy Bublik, V. T.
2011
8 p. 634-640
artikel
17 Bidomain Ferroelectric Crystals: Properties and Prospects of Application Kubasov, I. V.

8 p. 571-616
artikel
18 Boundary processes in the electrolyte–silicon interface area during the self-organization of the mosaic structure of 3D islets of porous silicon nanocrystallites in the long-term anode etching of p-Si (100) in electrolyte with an internal current source Tynyshtykbaev, K. B.
2015
8 p. 559-563
artikel
19 Calculation of Heat Transfer in Nanosized Heterostructures Abgaryan, K. K.

8 p. 559-563
artikel
20 Calculation of the Kapitza Resistance at the Silicon-Alpha Quartz Interface for Various Temperatures Abgaryan, K. K.

8 p. 627-629
artikel
21 Carbon Nanotubes Intercalated by Metal Atoms with Impurity Boron Atoms as a Base for Creating Nanowires: Theoretical Studies Boroznin, S. V.

8 p. 672-676
artikel
22 Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers Krasnikov, G. Ya.
2015
8 p. 523-530
artikel
23 Comparison of structures of Bi0.5Sb1.5Te3 thermoelectric materials, obtained by the hot-pressing and spark plasma sintering methods Bublik, V. T.
2012
8 p. 516-520
artikel
24 Conditions for the formation of defectless quantum dots in the theoretical estimation of InxGa1 − xAs/GaAs heterostructures Akchurin, R. Kh.
2011
8 p. 587-590
artikel
25 Crystallochemical Features of the Simplest and Mixed-Layered Bismuth Oxides Osipyan, V. G.
2017
8 p. 608-611
artikel
26 Deep Tellurium Purification for the Production of Electronic and Photonic Materials Grishechkin, M. B.
2017
8 p. 551-556
artikel
27 Deformation Anisotropy of Y + 128°-Cut Single Crystalline Bidomain Wafers of Lithium Niobate Kubasov, I. V.
2017
8 p. 557-563
artikel
28 Demonstration of the Bragg diffraction of light by a 2D-photon structure Naimi, E. K.
2013
8 p. 512-516
artikel
29 Determination of the indium arsenide autoepitaxial layers’ thickness by Fourier-Transform Infrared Spectroscopy Komkov, O. S.
2015
8 p. 575-578
artikel
30 Determination of the Polarization Plane Specific Rotation in Gyrotropic Crystals of the Middle Category by the Spectrophotometric Method Zabelina, E. V.

8 p. 757-763
artikel
31 Development of ferromagnetic semiconductors for applications in spin electronics: State and outlook Orlov, A. F.
2012
8 p. 443-452
artikel
32 Development of fundamentals of droplet epitaxy for the formation of quantum dot arrays in the InAs/GaAs system under MOVPE conditions Akchurin, R. Kh.
2012
8 p. 453-458
artikel
33 Diagnostics of the technological characteristics of high–power transistors using relaxation impedance spectrometry of thermal processes Vaskou, A. S.
2015
8 p. 579-584
artikel
34 Dielectric and Piezoelectric Properties of PLZT x/40/60 (x = 5; 12) Ceramics Shcheglova, A. I.

8 p. 673-678
artikel
35 Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron Rusak, T. F.
2018
8 p. 598-607
artikel
36 Effect of Nanosecond Ultraviolet Laser Pulses on the Surface of Germanium Single Crystals Zheleznov, V. Yu.

8 p. 741-749
artikel
37 Effect of the microstructure on the properties of radio-absorbing nickel-zinc ferrites Kostishin, V. G.
2011
8 p. 574-577
artikel
38 Effect of the Phase Composition and Local Crystal Structure on the Transport Properties of the ZrO2–Y2O3 and ZrO2–Gd2O3 Solid Solutions Agarkova, E. A.

8 p. 523-530
artikel
39 Effect of Treatment in Nitrogen Plasma on the Electrical Parameters of AlGaN/GaN Heterostructures Enisherlova, K. L.

8 p. 686-695
artikel
40 Electrical conductivity of titanium dioxide layers doped with vanadium, cobalt, and niobium Balagurov, L. A.
2012
8 p. 503-507
artikel
41 Electrical Performance Improvement of Lead-Acid Battery under the Impact of Micro Carbon Additives Kuzmenko, A. P.

8 p. 589-598
artikel
42 Electric properties of (SiC)1 − x(AlN)x/SiC anisotropic heterostructures Bilalov, B. A.
2011
8 p. 612-615
artikel
43 Electromagnetic and Mechanical Properties of the Nanocomposites of Polyacrylonitrile/Carbon Nanotubes Kozhitov, L. V.
2018
8 p. 589-597
artikel
44 Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution Voitsekhovskii, A. V.
2014
8 p. 552-558
artikel
45 Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates Fedotova, Yu. A.
2015
8 p. 512-516
artikel
46 Evaluation of Intellectual Property Objects in the Nanoindustry Field Kozhitov, L. V.

8 p. 599-612
artikel
47 Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling Tools Petrosyants, K. O.

8 p. 644-648
artikel
48 Evolution of Models and Algorithms for Calculating the Parameters of Technological Processes to Obtain Materials for Micro- and Nanoelectronics Krapukhin, V. V.
2017
8 p. 571-579
artikel
49 Experimental Support of the Magnetron Nickel Oxide Cathode Fabrication Process Kuchina, I. Yu.
2018
8 p. 613-618
artikel
50 Factors Determining the Relevance of Creating a Research Infrastructure for Synthesizing New Materials in Implementing the Priorities of Scientific and Technological Development of Russia Zatsarinny, A. A.

8 p. 600-602
artikel
51 Failure-Tolerant Self-Timed Circuits Zatsarinny, A. A.

8 p. 793-797
artikel
52 Failure-Tolerant Synchronous and Self-Timed Circuits Comparison Zatsarinny, A. A.

8 p. 630-632
artikel
53 Features of Creating Ohmic Contacts for GaAs/AlGaAs Heterostructures with a Two-Dimensional Electron Gas Kurochka, S. P.
2017
8 p. 600-607
artikel
54 Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk Vasilév, Yu. B.
2013
8 p. 467-476
artikel
55 Features of the Manifestation of Surface Electrochemical Processes in Ferroelectric Crystals with Low-Temperature Phase Transitions Kozlova, N. S.

8 p. 545-552
artikel
56 Formation and structure of mesoporous silicon Kargin, N. I.
2014
8 p. 531-535
artikel
57 Formation of an Individual Modeling Environment in a Hybrid High-Performance Computing System Volovich, K. I.

8 p. 580-583
artikel
58 Formation of bidomain structure in lithium niobate plates by the stationary external heating method Bykov, A. S.
2014
8 p. 536-542
artikel
59 Formation of Charge Pumps in the Structure of Photoelectric Converters Starkov, V. V.
2018
8 p. 608-612
artikel
60 Formation of Defects Forming Deep Levels in SiON/AlGaN/GaN Structures Enisherlova, K. L.

8 p. 817-826
artikel
61 Formation of ferroelectic domain stuctures in LiTaO3 crystals formed by direct electron-beam repolarization Roschupkin, D. V.
2014
8 p. 543-545
artikel
62 Fundamentally New Approaches for Solving Thermophysical Problems in the Field of Nanoelectronics Khvesyuk, V. I.

8 p. 798-804
artikel
63 How the edge permeability of a 2D island influences the transition from 2D to 3D growth Filimonov, S. N.
2011
8 p. 602-609
artikel
64 How the modes of operation of light-emitting diodes influence the process of the formation of defects in the area of a p-n junction and the quantum yield drop Manyakhin, F. I.
2011
8 p. 624-628
artikel
65 Hydrogen sorption by carbon nanomaterials Timonina, A. V.
2011
8 p. 595-601
artikel
66 Impurity accumulation in an adsorption layer during MBE doping Hervieu, Yu. Yu.
2014
8 p. 519-525
artikel
67 Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method Mazalov, A. V.
2014
8 p. 565-568
artikel
68 Influence of Extrusion Temperature on the Formation of a Bi0.5Sb1.5Te3 Structure of p-Type Conductivity Tarasova, I. V.
2017
8 p. 540-544
artikel
69 Influence of technological factors on dielectric permeability and radio-wave absorbing characteristics of nickel-zinc ferrites Kostishin, V. G.
2012
8 p. 469-473
artikel
70 Influence of Technological Parameters during Multiwire Cutting of GaAs Ingots on the Surface Characteristics of the Plates Podgorny, D. A.

8 p. 750-756
artikel
71 Influence of the silicon layer’s properties on the capacitance parameters of MIS/SOS structures Enisherlova, K. L.
2015
8 p. 537-545
artikel
72 Initiation of a polarized state in thin lithium niobate films synthesized on isolated silicon substrates Kiselev, D. A.
2013
8 p. 458-462
artikel
73 Integrated-differential method of thermal spectroscopy of energy levels in semiconductors by their charge trap Manyakhin, F. I.
2014
8 p. 581-586
artikel
74 Internal-getter formation in nitrogen-doped dislocation-free silicon wafers Mezhennyi, M. V.
2011
8 p. 553-558
artikel
75 Inverse-Coefficient Problem of Heat Transfer in Layered Nanostructures Abgaryan, K. K.

8 p. 553-558
artikel
76 Investigation of matrix photodetectors on structures with quantum wells in conditions of intensive optical lightning Sredin, V. G.
2012
8 p. 498-502
artikel
77 Investigation of the Effect of the Short-Term Exposure of Oxygen and Hydrogen Plasma on the Composition and Structure of Thin Tin Dioxide Films Tompakova, N. M.

8 p. 679-687
artikel
78 Is It not Time to Go back to Tamman’s Tg? Minaev, V. S.
2017
8 p. 612-621
artikel
79 Isotopic effects in the infrared absorption spectra of electrically active impurities in silicon 28, 29, and 30 with high isotopic enrichment Kotereva, T. V.
2013
8 p. 453-457
artikel
80 Issues of Implementing Neural Network Algorithms on Memristor Crossbars Morozov, A. Yu.

8 p. 568-573
artikel
81 Long-range stresses generated by misfit dislocations in epitaxial films Trukhanov, E. M.
2015
8 p. 552-558
artikel
82 Low Dose Rate Effects in Silicon-Based Devices and Integrated Circuits: A Review Tapero, K. I.
2018
8 p. 539-552
artikel
83 Machine-Learning Based Interatomic Potential for Studying the Properties of Crystal Structures Uvarova, O. V.

8 p. 623-627
artikel
84 Managing the Magnetic Properties of NiCo/C Nanocomposites Yakushko, E. V.

8 p. 543-553
artikel
85 Mathematical Modeling of a Self-Learning Neuromorphic Network Based on Nanosized Memristive Elements with a 1T1R-Crossbar-Architecture Morozov, A. Yu.

8 p. 628-637
artikel
86 Mathematical Modeling of Promising Structures of Metal Oxides Sechenykh, P. A.

8 p. 590-593
artikel
87 Mathematical Modeling of the Metrical Parameters of Hexagonal Closely Packed Metals Sechenykh, P. A.

8 p. 782-785
artikel
88 Mathematical Modeling of the Perovskite and Double Perovskite Crystal Structure Sechenykh, P. A.

8 p. 659-661
artikel
89 Mechanisms of electroconductivity in silicon-carbon nanocomposites with nanosized tungsten inclusions within a temperature range of 20-200°C Anfimov, I. M.
2013
8 p. 488-491
artikel
90 Metal oxide nanoparticles synthesized on porous silicon substrates Kononova, I. E.
2015
8 p. 531-536
artikel
91 Method for Calculating a Thermal-Expansion-Induced Mechanical Stress in Three-Dimensional Solid-State Structures Using Mathematical Modeling Ivanov, K. A.

8 p. 771-781
artikel
92 Method of determining nondestructive pulsed laser annealing modes for dielectric and semiconductor wafers Kovalenko, A. F.
2015
8 p. 590-594
artikel
93 Methods for Studying Materials and Structures in Electronics as Applied to the Development of Medicinal Endoprostheses of Titanium with Enhanced Fibroinegration Efficiency Shaikhaliev, A. I.
2018
8 p. 575-582
artikel
94 Modeling and simulating the nucleation of amorphous or crystalline films of diamond-like materials Sinel’nikov, B. M.
2011
8 p. 578-586
artikel
95 Modeling the Energy Structure of a GaN p–i–n Junction Manyakhin, F. I.
2018
8 p. 619-623
artikel
96 Modeling the Sensing Activity of Carbon Nanotubes Functionalized with the Carboxyl, Amino, or Nitro Group Toward Alkali Metals Boroznina, N. P.
2017
8 p. 580-584
artikel
97 Modification of a Germanium Surface Exposed to Radiation of a Nanosecond Ultraviolet Laser Zheleznov, V. Yu.

8 p. 649-656
artikel
98 Multiangle Spectrophotometric Methods of Reflection for Determining Refractive Coefficients Zabelina, E. V.

8 p. 617-625
artikel
99 New hybrid materials for organic light-emitting diode devices Avetisov, R. I.
2014
8 p. 526-530
artikel
100 New organometallic precursors and processes for chemical vapor deposition in the technology of nanomaterials Kuznetsov, F. A.
2013
8 p. 439-447
artikel
101 New trends in the development of the technology for the production of ultraviolet light-emitting diodes Kurin, S. Yu.
2013
8 p. 477-482
artikel
102 Nonlinear Dynamic Approach in Analyzing the Instability of Memristor Parameters Matyushkin, I. V.

8 p. 554-561
artikel
103 Novel metal carbon nanocomposites and carbon nanocrystalline material with promising properties for the development of electronics Kozhitov, L. V.
2013
8 p. 498-507
artikel
104 Obtaining barium hexaferrite brand 7BI215 with improved isotropic properties Kaneva, I. I.
2015
8 p. 517-522
artikel
105 Obtaining Material Based on Copper Selenide by the Methods of Powder Metallurgy Ivanov, A. A.
2017
8 p. 545-550
artikel
106 On the essence of the high photosensitivity of a-Si:H layered films Kurova, I. A.
2011
8 p. 616-619
artikel
107 On the Nature of the Effective Surface Charge Transformation on InAs Crystals during Anodic Oxide Layer Growth Artamonov, A. V.
2018
8 p. 624-627
artikel
108 On the Problem of Determining the Bulk Lifetime by Photoconductivity Decay on the Unpassivated Samples of Monocrystalline Silicon Anfimov, I. M.
2017
8 p. 585-590
artikel
109 On the temperature dependence of silicon quantum dot photoluminescence Nagornykh, S. N.
2014
8 p. 575-580
artikel
110 Optical transmission spectra and electrical properties of langasite and langatate crystals as dependent on growth conditions Buzanov, O. A.
2011
8 p. 562-566
artikel
111 Optimization Problems of Nanosized Semiconductor Heterostructures Abgaryan, K. K.
2018
8 p. 583-588
artikel
112 Pb1 − xSnxTe epitaxial films for terahertz detectors Belogorokhov, A. I.
2011
8 p. 610-611
artikel
113 Peculiarities of the Crystal Structure and Texture of Isotropic and Anisotropic Polycrystalline Hexagonal Ferrites BaFe12O19 Synthesized by Radiation-Thermal Sintering Isaev, I. M.

8 p. 531-544
artikel
114 Photoelectric converters in a system with spectral splitting of the solar energy Kurin, S. Yu.
2014
8 p. 559-564
artikel
115 Photoluminescence of CaGa2O4 Activated with Rare Earth Ions Yb3+ and Er3+ Mar’in, A. P.

8 p. 665-672
artikel
116 Photoluminescence spectra of CdxHg1 − xTe quantum-well heterostructures Gorn, D. I.
2013
8 p. 525-528
artikel
117 Photonic crystals with refractive index, modulated by ultrasound Naimi, E. K.
2012
8 p. 482-484
artikel
118 Photoreflectance characterization of gallium arsenide Komkov, O. S.
2012
8 p. 508-510
artikel
119 Polysilicon Market Development and Production Technologies Mitin, V. V.
2018
8 p. 553-558
artikel
120 Practice of the Visual Determination of the Direction of the Rotation of the Light Polarization Plane in Gyrotropic Uniaxial Single Crystals Zabelina, E. V.

8 p. 667-671
artikel
121 Prediction of Potential Barrier at Crystallite Boundaries in Poly- and Nanocrystalline Semiconductors Ilin, A. S.

8 p. 576-581
artikel
122 Processes during annealing of Ti–Al–Ni and Ti–Al–Ni–Au contact metallization systems Vanyukhin, K. D.
2015
8 p. 564-568
artikel
123 Promising materials of acoustoelectronics Roshchupkin, D. V.
2013
8 p. 463-466
artikel
124 Propagation of polarization of ferroelectric grains in electrically isolated lithium niobate films Zhukov, R. N.
2012
8 p. 459-463
artikel
125 Properties of nanosilicon obtained by plasma chemical decomposition of monosilane in a microwave discharge Parkhomenko, Yu. N.
2012
8 p. 491-497
artikel
126 Protein Folding Quantum Circuit for Bio Material Modelling Compression Lisnichenko, M. O.

8 p. 717-721
artikel
127 Quantum Mechanical Simulation of Polarization Switching in HfO2 Crystals Zhuravlev, A. A.

8 p. 805-809
artikel
128 Resistance of diamond optics to high-power fiber laser radiation Rogalin, V. E.
2012
8 p. 464-468
artikel
129 Scientific Services Consolidation Methods Zatsarinny, A. A.

8 p. 612-616
artikel
130 SiGe quantum rings on the Si(100) surface Kuchinskaya, P. A.
2012
8 p. 485-488
artikel
131 Simulation Modeling of an Analog Impulse Neural Network Based on a Memristor Crossbar Using Parallel Computing Technologies Morozov, A. Yu.

8 p. 786-792
artikel
132 Simulation of Hall Field Elements Based on Nanosized Silicon-on-Insulator Heterostructures Mordkovich, V. N.

8 p. 617-622
artikel
133 Simulation of the Radio Absorbing Properties of Pyrolyzed Polyacrylonitrile in the Frequency Range from 3 to 50 GHz Radchenko, D. P.

8 p. 764-770
artikel
134 Solar cells with a charge pump: Theoretical prospects and technological aspects of the application Gusev, V. A.
2015
8 p. 569-574
artikel
135 Spectral and photoelectric parameters of high-voltage multi-junction solar batteries Korol’chenko, A. S.
2011
8 p. 620-623
artikel
136 Statistical analysis of germanium influence on radiation and thermal stability of the n-p-n-p device structures based on CZ-Si〈P,Ge〉 electrophysical properties Bytkin, S. V.
2014
8 p. 546-551
artikel
137 Structural and electric properties of AlN substrates used for LED Heterostructures’ growth Polyakov, A. Ya.
2011
8 p. 629-633
artikel
138 Structure investigation of large single crystals of gallium antimonide grown by the Czochralski method in the [100] direction Ezhlov, V. S.
2015
8 p. 507-511
artikel
139 Structures and electronic properties of defects on the borders of silicon bonded wafers Tereshchenko, A. N.
2015
8 p. 585-589
artikel
140 Studies of the Interaction of Modified Nitro Group Boron-Nitride Nanotubes with Gas-Phase Carbon-Containing Molecules to Create Sensor Devices Boroznina, N. P.

8 p. 701-707
artikel
141 Studying Phase Equilibria in the Zn–Se–Fe Ternary System for Laser Applications Zykova, M. P.
2018
8 p. 559-565
artikel
142 Studying the formation of nanoporous and nanotubular titanium layers by electrochemical impedance spectroscopy Balagurov, L. A.
2013
8 p. 492-497
artikel
143 Studying the uniformity of the surface resistance of Ti, Al, Ni, Cr, and Au metal films on silicon Vanyukhin, K. D.
2013
8 p. 483-487
artikel
144 Study of heterostructures according to single-crystal X-ray diffractometry Lyutsau, A. V.
2013
8 p. 517-524
artikel
145 Study of the Abnormally High Photocurrent Relaxation Time in α-Ga2O3-Based Schottky Diodes Schemerov, I. V.

8 p. 827-834
artikel
146 Study of the atomically clean InSe(0001) surface by X-ray photoelectron spectroscopy Volykhov, A. A.
2012
8 p. 521-526
artikel
147 Study of the Plastic Formation in the Production of Thermoelectric Material Based on Bismuth Telluride Bogomolov, D. I.
2018
8 p. 566-574
artikel
148 Study of the spectral dependence of the absorption coefficient of undoped silicon-carbon films Malinkovich, M. D.
2012
8 p. 489-490
artikel
149 Surface-Modified Boron-Carbon BC5 Nanotube with Amine Group as a Sensor Device Element: Theoretical Research Zaporotskova, I. V.

8 p. 644-648
artikel
150 Surface structure of nanocomposites based on silicon-carbon matrix revealed by scanning probe microscopy Malinkovich, M. D.
2011
8 p. 591-594
artikel
151 Synthesis and Electromagnetic Properties of FeCoNi/C Nanocomposites Based on Polyvinyl Alcohol Muratov, D. G.

8 p. 657-664
artikel
152 Synthesis of porous silicon with silver nanoparticles by low-energy ion implantation Batalov, R. I.
2015
8 p. 546-551
artikel
153 System Interface of Scientific Services of a Digital Platform for Multiscale Modeling Kondrashev, V. A.

8 p. 638-643
artikel
154 Technological features of the formation of transparent conductive contacts of ITO film for LEDs based on gallium nitride Vanyukhin, K. D.
2014
8 p. 569-574
artikel
155 Technology and Thermomechanics in Growing Tubular Silicon Single Crystals Verezub, N. A.

8 p. 677-685
artikel
156 Temperature Studies of Hall Field Sensors Based on Nanosized Silicon-on-Insulator Heterostructures Abgaryan, K. K.

8 p. 637-643
artikel
157 The ALD Films of Al2O3, SiNx, and SiON as Passivation Coatings in AlGaN/GaN HEMT Enisherlova, K. L.

8 p. 603-611
artikel
158 The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT Enisherlova, K. L.

8 p. 564-575
artikel
159 The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon Enisherlova, K. L.
2011
8 p. 641-648
artikel
160 The growth, structure, and magnetic properties of thin epitaxial films of GdMnO3 multiferroics Andreev, N. V.
2012
8 p. 511-515
artikel
161 The Influence of Substitution with Aluminum on the Field of Effective Magnetic Anisotropy and the Degree of Magnetic Texture of Anisotropic Polycrystalline Hexagonal Ferrites of Barium and Strontium for Substrates of Microstrip Devices of Microwave Electronics Shcherbakov, S. V.

8 p. 582-588
artikel
162 The Instability of the CV Characteristics’ Capacitance When Measuring AlGaN/GaN-Heterostructures and the HEMT-Transistors Based on Them Enisherlova, K. L.
2017
8 p. 591-599
artikel
163 The Main Scientific and Technical Problems of Using Hybrid HPC Clusters in Materials Science Volovich, K. I.

8 p. 574-579
artikel
164 The Mechanism of a Film-Forming Medium during the RF Deposition of Ferroelectric Ceramics of the BaxSr1–xTiO3 Composition Afanasiev, M. S.

8 p. 696-700
artikel
165 The Relevance of the Problem of Synthesis of New Materials in Conditions of Innovative Industrial Development Zatsarinnyy, A. A.

8 p. 810-816
artikel
166 Thermodynamics of homogeneous and heterogeneous nucleation of clusters of catalysts for growing carbon nanotubes Bulyarskii, S. V.
2012
8 p. 474-481
artikel
167 Thermoelectric properties of the (Bi,Sb)2Te3-based material obtained by spark plasma sintering Drabkin, I. A.
2013
8 p. 448-452
artikel
168 The Standard Model of the Heterostructure for Microwave Devices Abgaryan, K. K.
2017
8 p. 564-570
artikel
169 The Study of Nickel Impurity Segregation on LSNT Perovskite Open Surfaces by Ab Initio Molecular Dynamics Chistyakova, A. A.

8 p. 654-658
artikel
170 Wide-bandgap compound semiconductors for X- or gamma-ray detectors Zaletin, V. M.
2011
8 p. 543-552
artikel
                             170 gevonden resultaten
 
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