| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers
|
Veselinov, K.
|
|
2006
|
38 |
4-6 |
p. 369-379
|
artikel
|
| 2 |
Carrier Dynamics in Quantum Well Lasers
|
Thränhardt, A.
|
|
2006
|
38 |
4-6 |
p. 361-368
|
artikel
|
| 3 |
Characteristics of the Phase Noise Correlation of Injection Locked Lasers for RF Signal Generation and Transmission
|
Kéfélian, F.
|
|
2006
|
38 |
4-6 |
p. 467-478
|
artikel
|
| 4 |
Design and Fabrication of GaInAsP/InP VCSEL with Two a-Si/a-SiNx Bragg Reflectors
|
Levallois, C.
|
|
2006
|
38 |
4-6 |
p. 281-291
|
artikel
|
| 5 |
Experimental Injection Map of Semiconductor Laser Submitted to Filtered Feedback
|
Guignard, Céline
|
|
2006
|
38 |
4-6 |
p. 411-428
|
artikel
|
| 6 |
40 GHz Mode-Locked Semiconductor Lasers: Theory, Simulations and Experiment
|
Bandelow, Uwe
|
|
2006
|
38 |
4-6 |
p. 495-512
|
artikel
|
| 7 |
Introduction to the Special Issue of Optical and Quantum Electronics Related to the Workshop “PHysics and Applications of SEmiconductor LASERs” (PHASE)
|
Sciamanna, Marc
|
|
2006
|
38 |
4-6 |
p. 275-279
|
artikel
|
| 8 |
Lasing from GaAs Gunn devices
|
Chung, Sung-Hoon
|
|
2006
|
38 |
4-6 |
p. 513-521
|
artikel
|
| 9 |
Lateral Waveguiding Properties of VCSELs for Integrated Optical Monitoring
|
Bardinal, V.
|
|
2006
|
38 |
4-6 |
p. 523-534
|
artikel
|
| 10 |
Mode Amplification in Inhomogeneous QD Semiconductor Optical Amplifiers
|
Wong, H. C.
|
|
2006
|
38 |
4-6 |
p. 395-409
|
artikel
|
| 11 |
Monte Carlo Modeling of Phonon-assisted Carrier Transport in Cubic and Hexagonal Gallium Nitride
|
Brazis, R.
|
|
2006
|
38 |
4-6 |
p. 339-347
|
artikel
|
| 12 |
Numerical Analysis of Highly Birefringent Photonic Crystal Fibers with Bragg Reflectors
|
Antkowiak, Maciej
|
|
2006
|
38 |
4-6 |
p. 535-545
|
artikel
|
| 13 |
Optimization and Characterization of InGaAsN/GaAs Quantum-well Ridge Laser Diodes for High Frequency Operation
|
Bonnefont, S.
|
|
2006
|
38 |
4-6 |
p. 313-324
|
artikel
|
| 14 |
Physical Analysis of a Possibility to Reach the 1.30-μm Emission from the GaAs-Based VCSELs with the InGaAs/GaAs Quantum-Well Active Regions and the Intentionally Detuned Optical Cavities
|
Sarzała, Robert P.
|
|
2006
|
38 |
4-6 |
p. 325-337
|
artikel
|
| 15 |
Polarization and Transverse Mode Behaviour of VCSELs under Optical Injection
|
Torre, M. S.
|
|
2006
|
38 |
4-6 |
p. 445-465
|
artikel
|
| 16 |
Polarization Switching Bistability and Dynamics in Vertical-Cavity Surface-Emitting Laser under Orthogonal Optical Injection
|
Gatare, I.
|
|
2006
|
38 |
4-6 |
p. 429-443
|
artikel
|
| 17 |
Simulations of Differential Gain and Linewidth Enhancement Factor of Quantum Dot Semiconductor Lasers
|
Gioannini, Mariangela
|
|
2006
|
38 |
4-6 |
p. 381-394
|
artikel
|
| 18 |
Spatiotemporal and Thermal Analysis of VCSEL for Short-range Gigabit Optical Links
|
Gholami, A.
|
|
2006
|
38 |
4-6 |
p. 479-493
|
artikel
|
| 19 |
Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region
|
Sarzała, Robert P.
|
|
2006
|
38 |
4-6 |
p. 293-311
|
artikel
|
| 20 |
Validity of Scalar Approaches to Radiation Modes of the GaAs-Based 1.3-μm Diode Lasers Designed for the Optical–Fibre Communication
|
Czyszanowski, Tomasz
|
|
2006
|
38 |
4-6 |
p. 349-360
|
artikel
|
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