| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced Sensor Technology Based on Oxide Thin Film—MEMS Integration
|
Tuller, Harry L.
|
|
2000
|
4 |
2-3 |
p. 415-425
|
artikel
|
| 2 |
A New Approach in Layer-by-layer Growth of Oxide Materials by Pulsed Laser Deposition
|
Blank, Dave H.A.
|
|
2000
|
4 |
2-3 |
p. 311-318
|
artikel
|
| 3 |
Atomic Force Microscopy Examination of the Evolution of the Surface Morphology of Bi4Ti3O12 grown by Molecular Beam Epitaxy
|
Brown, G.W.
|
|
2000
|
4 |
2-3 |
p. 351-356
|
artikel
|
| 4 |
Chemical Design and Thin Film Preparation of p-Type Conductive Transparent Oxides
|
Yanagi, Hiroshi
|
|
2000
|
4 |
2-3 |
p. 407-414
|
artikel
|
| 5 |
Crystallographic Orientation Dependence of the Schottky Properties of Au/SrTiO3 Junctions
|
Shimizu, Takashi
|
|
2000
|
4 |
2-3 |
p. 299-303
|
artikel
|
| 6 |
Dielectric Properties of Homoepitaxial SrTiO3SrTiO3SrTiO3 Thin Films Grown in the Step-Flow Mode
|
Lippmaa, M.
|
|
2000
|
4 |
2-3 |
p. 365-368
|
artikel
|
| 7 |
Effect of Ultra-Thin SrTiO3 Seed Layer on the Microwave Surface Resistance of YBa2Cu3O7 Films Deposited on (1 0 0) MgO
|
Couvert, C.
|
|
2000
|
4 |
2-3 |
p. 319-325
|
artikel
|
| 8 |
Epitaxial Growth and Luminescent Properties of Mn2+-Activated ZnGa2O4 Films
|
Lee, Yong Eui
|
|
2000
|
4 |
2-3 |
p. 293-297
|
artikel
|
| 9 |
Epitaxial Sr-Bi-Ta Oxide Films of Cubic Fluorite-Like Structure
|
Noh, T.W.
|
|
2000
|
4 |
2-3 |
p. 273-278
|
artikel
|
| 10 |
Ferroelectricity in PbTiO3 Thin Films: A First Principles Approach
|
Rabe, K.M.
|
|
2000
|
4 |
2-3 |
p. 379-383
|
artikel
|
| 11 |
Guest Editorial
|
Kawasaki, M.
|
|
2000
|
4 |
2-3 |
p. 263
|
artikel
|
| 12 |
Initial Stage Nucleation and Growth of Epitaxial SrRuO3 Thin Films on (0 0 1) SrTiO3 Substrates
|
Chae, R.H.
|
|
2000
|
4 |
2-3 |
p. 345-349
|
artikel
|
| 13 |
Magnetically Tunable Microwave Filters based on YBCO/YIG/GGG Heterostructures
|
Silliman, S.D.
|
|
2000
|
4 |
2-3 |
p. 305-310
|
artikel
|
| 14 |
Magnetoresistance in Tunnel Junctions Made of Epitaxially Grown Manganate Films with 1.6-nm-Thick Barriers
|
Obata, Takeshi
|
|
2000
|
4 |
2-3 |
p. 427-432
|
artikel
|
| 15 |
On O16–O18 Isotope Effects in Manganese Perovskites
|
Geballe, T.H.
|
|
2000
|
4 |
2-3 |
p. 289-292
|
artikel
|
| 16 |
Oxide Thin Films for Tunable Microwave Devices
|
Xi, X.X.
|
|
2000
|
4 |
2-3 |
p. 393-405
|
artikel
|
| 17 |
Pulsed Laser Deposition of Zr1-xCexO2 and Ce1-xLaxO2-x/2 for Buffer Layers and Insulating Barrier in Oxide Heterostructures
|
Lyonnet, R.
|
|
2000
|
4 |
2-3 |
p. 369-377
|
artikel
|
| 18 |
RHEED Intensity Oscillations for the Stoichiometric Growth of SrTiO3 Thin Films by Reactive Molecular Beam Epitaxy
|
Haeni, J.H.
|
|
2000
|
4 |
2-3 |
p. 385-391
|
artikel
|
| 19 |
The Effect of Size, Strain, and Long-Range Interactions on Ferroelectric Phase Transitions in KNbO3KTaO3KNbO3 Superlattices Studied by X-ray, EXAFS, and Dielectric Measurements
|
Christen, H.-M.
|
|
2000
|
4 |
2-3 |
p. 279-287
|
artikel
|
| 20 |
The Effect of Stress on the Microwave Dielectric Properties of Ba0.5Sr0.5TiO3 Thin Films
|
Horwitz, James S.
|
|
2000
|
4 |
2-3 |
p. 357-363
|
artikel
|
| 21 |
The Ferroelectric Memory and its Applications
|
Takasu, Hidemi
|
|
2000
|
4 |
2-3 |
p. 327-338
|
artikel
|
| 22 |
The Mott Transition Field Effect Transistor: A Nanodevice?
|
Newns, D.M.
|
|
2000
|
4 |
2-3 |
p. 339-344
|
artikel
|
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