| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate extraction of maximum current densities from the layout
|
Seidl, Albert
|
|
|
5 |
4 |
p. 381-384
|
artikel
|
| 2 |
A 3D moving grid algorithm for process simulation
|
Strecker, N.
|
|
|
5 |
4 |
p. 297-300
|
artikel
|
| 3 |
A drain current model for Schottky-barrier CNT-FETs
|
Jiménez, David
|
|
|
5 |
4 |
p. 361-364
|
artikel
|
| 4 |
A linear response Monte Carlo algorithm for inversion layers and magnetotransport
|
Jungemann, Christoph
|
|
|
5 |
4 |
p. 411-414
|
artikel
|
| 5 |
An evolution algorithm for noise modeling of HEMT’s down to cryogenic temperatures
|
Caddemi, Alina
|
|
|
5 |
4 |
p. 337-340
|
artikel
|
| 6 |
An improved Wigner Monte-Carlo technique for the self-consistent simulation of RTDs
|
Querlioz, Damien
|
|
|
5 |
4 |
p. 443-446
|
artikel
|
| 7 |
An iterative matrix solution of the Boltzmann equation for the calculation of diffusion and noise in semiconductors
|
Diyadi, J.
|
|
|
5 |
4 |
p. 261-266
|
artikel
|
| 8 |
A novel approach to three-dimensional semiconductor process simulation: Application to thermal oxidation
|
Suvorov, Vasily
|
|
|
5 |
4 |
p. 291-295
|
artikel
|
| 9 |
A novel framework for distributing computations DisPyTE – distributing Python tasks environment
|
Fühner, Tim
|
|
|
5 |
4 |
p. 349-352
|
artikel
|
| 10 |
A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices
|
Li, Yiming
|
|
|
5 |
4 |
p. 365-370
|
artikel
|
| 11 |
Calibration of the Density-Gradient model by using the multidimensional effective-mass Schrödinger equation
|
Andrei, Petru
|
|
|
5 |
4 |
p. 315-318
|
artikel
|
| 12 |
Design perspective against random dopant fluctuation and process variation for scaling multi-gate devices
|
Ashizawa, Yoshio
|
|
|
5 |
4 |
p. 319-322
|
artikel
|
| 13 |
DSMC versus WENO-BTE: A double gate MOSFET example
|
Cáceres, Maria José
|
|
|
5 |
4 |
p. 471-474
|
artikel
|
| 14 |
Editorial
|
Kosina, Hans
|
|
|
5 |
4 |
p. 283
|
artikel
|
| 15 |
Effects of lithography non-uniformity on device electrical behavior. Simple stochastic modeling of material and process effects on device performance
|
Patsis, George P.
|
|
|
5 |
4 |
p. 341-344
|
artikel
|
| 16 |
Efficient full-flow process simulation for 3D structures including stress modeling
|
Gencer, Alp H.
|
|
|
5 |
4 |
p. 353-356
|
artikel
|
| 17 |
Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors
|
Faralli, Nicolas
|
|
|
5 |
4 |
p. 483-486
|
artikel
|
| 18 |
Global Modeling of high frequency devices
|
Ayubi-Moak, J. S.
|
|
|
5 |
4 |
p. 415-418
|
artikel
|
| 19 |
Hot electron distribution function for the Boltzmann equation with analytic bands
|
Muscato, Orazio
|
|
|
5 |
4 |
p. 377-380
|
artikel
|
| 20 |
Human body model ESD simulation including self heating effect
|
Takani, T.
|
|
|
5 |
4 |
p. 393-395
|
artikel
|
| 21 |
Influences of grain structure on thermally induced stresses in 3D IC inter-wafer vias
|
Bentz, D. N.
|
|
|
5 |
4 |
p. 327-331
|
artikel
|
| 22 |
Intrinsic parameter fluctuations due to random grain orientations in high-κ gate stacks
|
Brown, Andrew R.
|
|
|
5 |
4 |
p. 333-336
|
artikel
|
| 23 |
Introducing energy broadening in semiclassical Monte Carlo simulations
|
Ferrari, Giulio
|
|
|
5 |
4 |
p. 419-423
|
artikel
|
| 24 |
Joule heating and phonon transport in silicon MOSFETs
|
Aksamija, Zlatan
|
|
|
5 |
4 |
p. 431-434
|
artikel
|
| 25 |
Kinetic-energy transport equation for the modeling of ballistic MOSFETs
|
Tang, Ting-Wei
|
|
|
5 |
4 |
p. 301-304
|
artikel
|
| 26 |
Kinetic Monte-Carlo simulations of germanium epitaxial growth on silicon
|
Akis, Richard
|
|
|
5 |
4 |
p. 451-454
|
artikel
|
| 27 |
Meshless solution of the 3-D semiconductor Poisson equation
|
Aksamija, Zlatan
|
|
|
5 |
4 |
p. 459-462
|
artikel
|
| 28 |
Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently
|
Krishnan, S.
|
|
|
5 |
4 |
p. 435-438
|
artikel
|
| 29 |
Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high-κ dielectric MOSFETS
|
Barker, J. R.
|
|
|
5 |
4 |
p. 463-466
|
artikel
|
| 30 |
Monte Carlo simulation of double gate MOSFET including multi sub-band description
|
Saint-Martin, J.
|
|
|
5 |
4 |
p. 439-442
|
artikel
|
| 31 |
Negative gate-overlap in nanoscaled DG-MOSFETs with asymmetric gate bias
|
Shao, Xue
|
|
|
5 |
4 |
p. 389-392
|
artikel
|
| 32 |
Numerical analysis of a DAR IMPATT diode
|
Zemliak, Alexander M.
|
|
|
5 |
4 |
p. 401-404
|
artikel
|
| 33 |
Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs
|
Li, Yiming
|
|
|
5 |
4 |
p. 371-376
|
artikel
|
| 34 |
On a simple and accurate quantum correction for Monte Carlo simulation
|
Bufler, F. M.
|
|
|
5 |
4 |
p. 467-469
|
artikel
|
| 35 |
Particle-based simulation: An algorithmic perspective
|
Saraniti, Marco
|
|
|
5 |
4 |
p. 405-410
|
artikel
|
| 36 |
Power·delay product in COSMOS logic circuits
|
Al-Ahmadi, Ahmad
|
|
|
5 |
4 |
p. 305-309
|
artikel
|
| 37 |
Quantum correction for DG MOSFETs
|
Wagner, Martin
|
|
|
5 |
4 |
p. 397-400
|
artikel
|
| 38 |
Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices
|
Sverdlov, Viktor
|
|
|
5 |
4 |
p. 447-450
|
artikel
|
| 39 |
Scattering and space-charge effects in Wigner Monte Carlo simulations of single and double barrier devices
|
Sverdlov, Viktor
|
|
2007
|
5 |
4 |
p. 487
|
artikel
|
| 40 |
Schrödinger/Luttinger approach to scaled MOS transport for various crystal orientations and its experimental verifications
|
Okada, Takako
|
|
|
5 |
4 |
p. 425-429
|
artikel
|
| 41 |
Self-consistent ion transport simulation in carbon nanotube channels
|
Eschermann, Jan F.
|
|
|
5 |
4 |
p. 455-457
|
artikel
|
| 42 |
Simulation of piezoresistivity effect in FETs
|
Auf der Maur, Matthias
|
|
|
5 |
4 |
p. 323-326
|
artikel
|
| 43 |
Simulation of slow current transients and current compression in AlGaAs/GaAs HFETs
|
Ikarashi, H.
|
|
|
5 |
4 |
p. 357-360
|
artikel
|
| 44 |
SSOR preconditioned GPBiCG method for the linear interference cancellation of asynchronous CDMA systems
|
Yang, L.
|
|
|
5 |
4 |
p. 267-273
|
artikel
|
| 45 |
Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator
|
Seoane, N.
|
|
|
5 |
4 |
p. 385-388
|
artikel
|
| 46 |
Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator
|
Aldegunde, M.
|
|
|
5 |
4 |
p. 311-314
|
artikel
|
| 47 |
Super-resolution using neural networks based on the optimal recovery theory
|
Huang, Yizhen
|
|
|
5 |
4 |
p. 275-281
|
artikel
|
| 48 |
The 3D nanometer device project nextnano: Concepts, methods, results
|
Trellakis, Alex
|
|
|
5 |
4 |
p. 285-289
|
artikel
|
| 49 |
Thermal noise in nanometric DG-MOSFET
|
Dollfus, P.
|
|
|
5 |
4 |
p. 479-482
|
artikel
|
| 50 |
Transient TCAD simulation of three-stage organic ring oscillator
|
Erlen, C.
|
|
|
5 |
4 |
p. 345-348
|
artikel
|
| 51 |
Wave-mixing effects on electronic noise in semiconductors
|
Adorno, D. Persano
|
|
|
5 |
4 |
p. 475-477
|
artikel
|
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