| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fast and stable Poisson-Schrödinger solver for the analysis of carbon nanotube transistors
|
Pourfath, M.
|
|
2006
|
5 |
2-3 |
p. 155-159
|
artikel
|
| 2 |
An efficient numerical technique for the implementation of SSLS and cyclostationary noise analysis in physics-based device simulators
|
Bertazzi, F.
|
|
2006
|
5 |
2-3 |
p. 85-89
|
artikel
|
| 3 |
A study of envelope functions in FD-SOI devices for non-parabolic bands
|
Gómez-Campos, F. M.
|
|
2006
|
5 |
2-3 |
p. 167-170
|
artikel
|
| 4 |
A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulation
|
Li, Yiming
|
|
2006
|
5 |
2-3 |
p. 125-129
|
artikel
|
| 5 |
Atomistic effect of delta doping layer in a 50 nm InP HEMT
|
Seoane, N.
|
|
2006
|
5 |
2-3 |
p. 131-135
|
artikel
|
| 6 |
Channel noise modelling of nanoMOSFETs in a partially ballistic transport regime
|
Mugnaini, Giorgio
|
|
2006
|
5 |
2-3 |
p. 91-95
|
artikel
|
| 7 |
Complementary split rings resonators (CSRRs): Towards the miniaturization of microwave device design
|
Bonache, J.
|
|
2006
|
5 |
2-3 |
p. 193-197
|
artikel
|
| 8 |
Confined acoustic phonons in ultrathin SOI layers
|
Donetti, L.
|
|
2006
|
5 |
2-3 |
p. 199-203
|
artikel
|
| 9 |
Dielectric ground plane design over bianisotropic media
|
Toscano, Alessandro
|
|
2006
|
5 |
2-3 |
p. 229-234
|
artikel
|
| 10 |
2D Modeling of nanoscale DG SOI MOSFETs in and near the subthreshold regime
|
Kolberg, Sigbjørn
|
|
2006
|
5 |
2-3 |
p. 217-222
|
artikel
|
| 11 |
Editorial: Modeling and simulation of electron devices
|
Iannaccone, Giuseppe
|
|
2006
|
5 |
2-3 |
p. 69-70
|
artikel
|
| 12 |
Effect of layout parasitics on the current distribution of power MOSFETs operated at high switching frequency
|
Biondi, Tonio
|
|
2006
|
5 |
2-3 |
p. 149-153
|
artikel
|
| 13 |
Efficient calculation of lifetime based direct tunneling through stacked dielectrics
|
Karner, M.
|
|
2006
|
5 |
2-3 |
p. 161-165
|
artikel
|
| 14 |
Equivalent circuit for RF flexural free-free MEMS resonators
|
Mastrangeli, M.
|
|
2006
|
5 |
2-3 |
p. 205-210
|
artikel
|
| 15 |
Excess drain noise simulation in ultrathin oxides MOSFETs
|
Contaret, T.
|
|
2006
|
5 |
2-3 |
p. 187-192
|
artikel
|
| 16 |
High order explicit versus quasi-linear implicit finite-difference approximation for semiconductor device time-domain macroscopic modelling on parallel computer
|
Moussati, Ali El
|
|
2006
|
5 |
2-3 |
p. 235-240
|
artikel
|
| 17 |
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
|
Pala, Marco
|
|
2006
|
5 |
2-3 |
p. 241-245
|
artikel
|
| 18 |
Modeling turn-off voltage rise in SOI LIGBT
|
Napoli, Ettore
|
|
2006
|
5 |
2-3 |
p. 181-186
|
artikel
|
| 19 |
Monte Carlo simulation of terahertz quantum cascade lasers: The influence of the modelling of carrier-carrier scattering
|
Bonno, O.
|
|
2006
|
5 |
2-3 |
p. 103-107
|
artikel
|
| 20 |
Monte Carlo study of electron transport in strained silicon inversion layers
|
Ungersboeck, E.
|
|
2006
|
5 |
2-3 |
p. 79-83
|
artikel
|
| 21 |
Numerical modeling of TeraHertz electronic devices
|
Varani, L.
|
|
2006
|
5 |
2-3 |
p. 71-77
|
artikel
|
| 22 |
Numerical simulation of ballistic surface transport in cylindrical nanosystems
|
Marchi, Alex
|
|
2006
|
5 |
2-3 |
p. 177-180
|
artikel
|
| 23 |
Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs
|
Li, Yiming
|
|
2006
|
5 |
2-3 |
p. 255-258
|
artikel
|
| 24 |
Numerical simulation of small silicon partially insulated MOSFETs
|
Klix, Wilfried
|
|
2006
|
5 |
2-3 |
p. 251-254
|
artikel
|
| 25 |
Numerical simulation of time resolved charge transport in semiconductor structures for electronic devices
|
Citarella, G.
|
|
2006
|
5 |
2-3 |
p. 211-215
|
artikel
|
| 26 |
One-dimensional screening effects in bulk-modulated carbon nanotube transistors
|
Latessa, L.
|
|
2006
|
5 |
2-3 |
p. 97-101
|
artikel
|
| 27 |
Scaling effects in AlGaN/GaN HEMTs: Comparison between Monte Carlo simulations and experimental data
|
Russo, S.
|
|
2006
|
5 |
2-3 |
p. 109-113
|
artikel
|
| 28 |
Scattering resonances in 1D coherent transport through a correlated quantum dot: An application of the few-particle quantum transmitting boundary method
|
Bertoni, Andrea
|
|
2006
|
5 |
2-3 |
p. 247-250
|
artikel
|
| 29 |
Sensitivity of single- and double-gate MOS architectures to residual discrete dopant distribution in the channel
|
Dollfus, P.
|
|
2006
|
5 |
2-3 |
p. 119-123
|
artikel
|
| 30 |
Silicon-on-insulator non-volatile memories with second-bit effect
|
Perniola, L.
|
|
2006
|
5 |
2-3 |
p. 137-142
|
artikel
|
| 31 |
Simulation of slow current transients and current collapse in GaN FETs
|
Takayanagi, H.
|
|
2006
|
5 |
2-3 |
p. 223-227
|
artikel
|
| 32 |
Simulation of the gate tunnel current in the double gate (DG) MOS transistor
|
Majkusiak, B.
|
|
2006
|
5 |
2-3 |
p. 143-148
|
artikel
|
| 33 |
Strain effects in SiN-passivated GaN-based HEMT devices
|
Sacconi, Fabio
|
|
2006
|
5 |
2-3 |
p. 115-118
|
artikel
|
| 34 |
Validity of the effective potential approach for the simulation of quantum confinement effects: A Monte-Carlo study
|
Jaud, M.-A.
|
|
2006
|
5 |
2-3 |
p. 171-175
|
artikel
|
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