| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A charge-plasma-based dual-metal-gate recessed-source/drain dopingless junctionless transistor with enhanced analog and RF performance
|
Verma, Prateek Kishor
|
|
|
19 |
3 |
p. 1085-1099
|
artikel
|
| 2 |
A first-principles study of the proton and oxygen migration behavior in the rare-earth perovskite SmNiO3
|
Lan, Chunfeng
|
|
|
19 |
3 |
p. 905-909
|
artikel
|
| 3 |
A first-principles theoretical study of the electronic and optical properties of twisted bilayer GaN structures
|
Cai, Xiang
|
|
|
19 |
3 |
p. 910-916
|
artikel
|
| 4 |
A genetic algorithm to optimize the performance of the tunneling field-effect transistor
|
Elgamal, Muhammad
|
|
|
19 |
3 |
p. 1068-1076
|
artikel
|
| 5 |
Analytical modeling of a high-K underlap dielectric- and charge-modulated silicon-on-nothing FET-based biosensor
|
Singh, Khuraijam Nelson
|
|
|
19 |
3 |
p. 1126-1135
|
artikel
|
| 6 |
An efficient VLSI circuit partitioning algorithm based on satin bowerbird optimization (SBO)
|
Pavithra Guru, R.
|
|
|
19 |
3 |
p. 1232-1248
|
artikel
|
| 7 |
A novel 2-D analytical model for the electrical characteristics of a gate-all-around heterojunction tunnel field-effect transistor including depletion regions
|
Usha, C.
|
|
|
19 |
3 |
p. 1144-1153
|
artikel
|
| 8 |
A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors
|
Noei, Maziar
|
|
|
19 |
3 |
p. 975-986
|
artikel
|
| 9 |
A review on the compact modeling of parasitic capacitance: from basic to advanced FETs
|
Sharma, Savitesh Madhulika
|
|
|
19 |
3 |
p. 1116-1125
|
artikel
|
| 10 |
A simple analytical model for the resonant tunneling diode based on the transmission peak and scattering effect
|
Yadav, Sneh Lata
|
|
|
19 |
3 |
p. 1061-1067
|
artikel
|
| 11 |
A simulation study of the influence of a high-k insulator and source stack on the performance of a double-gate tunnel FET
|
Karbalaei, Mohammad
|
|
|
19 |
3 |
p. 1077-1084
|
artikel
|
| 12 |
A source/drain-on-insulator structure to improve the performance of stacked nanosheet field-effect transistors
|
Jegadheesan, V.
|
|
|
19 |
3 |
p. 1136-1143
|
artikel
|
| 13 |
A variation-aware design for storage cells using Schottky-barrier-type GNRFETs
|
Abbasian, Erfan
|
|
|
19 |
3 |
p. 987-1001
|
artikel
|
| 14 |
Bandgap modulation of low-dimensional γ-graphyne-1 under uniform strain
|
Rouzkhash, Behrouz
|
|
|
19 |
3 |
p. 947-956
|
artikel
|
| 15 |
Computational analysis to understand the performance difference between two small-molecule acceptors differing in their terminal electron-deficient group
|
Mahmood, Asif
|
|
|
19 |
3 |
p. 931-939
|
artikel
|
| 16 |
Creation of a fast optical Toffoli gate based on photonic crystal nonlinear ring resonators
|
Hassangholizadeh-Kashtiban, Mahdi
|
|
|
19 |
3 |
p. 1281-1287
|
artikel
|
| 17 |
Designing a Turing-complete cellular automata system using quantum-dot cellular automata
|
Tougaw, Douglas
|
|
|
19 |
3 |
p. 1337-1343
|
artikel
|
| 18 |
Design of bioinspired tripartite synapse analog integrated circuit in 65-nm CMOS Technology
|
Tir, Shohreh
|
|
|
19 |
3 |
p. 1313-1328
|
artikel
|
| 19 |
DFT and TD-DFT studies of new pentacene-based organic molecules as a donor material for bulk-heterojunction solar cells
|
Muz, İskender
|
|
|
19 |
3 |
p. 895-904
|
artikel
|
| 20 |
Drift–diffusion simulation of S-shaped current–voltage relations for organic semiconductor devices
|
Doan, Duy Hai
|
|
|
19 |
3 |
p. 1164-1174
|
artikel
|
| 21 |
Extraction of uncertain parameters of a single-diode model for a photovoltaic panel using lightning attachment procedure optimization
|
Ben Messaoud, Ramzi
|
|
|
19 |
3 |
p. 1192-1202
|
artikel
|
| 22 |
First-principles study of 2,6-dimethyl-3,5-heptanedione: a β-diketone molecular switch induced by hydrogen transfer
|
Sayyar, Zahra
|
|
|
19 |
3 |
p. 917-930
|
artikel
|
| 23 |
Lead position and lead-ring coupling effects on the spin-dependent transport properties in a two-dimensional network of quantum nanorings in the presence of Rashba spin–orbit interaction
|
Saeedi, Sevan
|
|
|
19 |
3 |
p. 1014-1030
|
artikel
|
| 24 |
Magnetic nonvolatile flip-flops with spin-Hall assistance for power gating in ternary systems
|
Javadi, Ali Asghar
|
|
|
19 |
3 |
p. 1175-1186
|
artikel
|
| 25 |
Microstrip sensor for product quality monitoring
|
Amar, H.
|
|
|
19 |
3 |
p. 1329-1336
|
artikel
|
| 26 |
Modelling resistive and phase-change memory with passive selector arrays: a MATLAB tool
|
Noori, Yasir J.
|
|
|
19 |
3 |
p. 1203-1214
|
artikel
|
| 27 |
Modifying quantum Grover’s algorithm for dynamic multi-pattern search on reconfigurable hardware
|
Mahmud, Naveed
|
|
|
19 |
3 |
p. 1215-1231
|
artikel
|
| 28 |
Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform
|
Berrada, Salim
|
|
|
19 |
3 |
p. 1031-1046
|
artikel
|
| 29 |
Optimum design of a new ultra-wideband LNA using heuristic multiobjective optimization
|
Bijari, Abolfazl
|
|
|
19 |
3 |
p. 1295-1312
|
artikel
|
| 30 |
Reconfigurable silicon nanotube using numerical simulations
|
Justeena, A. Nisha
|
|
|
19 |
3 |
p. 966-974
|
artikel
|
| 31 |
RF analysis of intercalated graphene nanoribbon-based global-level interconnects
|
Kaur, Manjit
|
|
|
19 |
3 |
p. 1002-1013
|
artikel
|
| 32 |
SCDNDTDL: a technique for designing low-power domino circuits in FinFET technology
|
Garg, Sandeep
|
|
|
19 |
3 |
p. 1249-1267
|
artikel
|
| 33 |
Study on the maximum electric power supplied to copper bromide vapor lasers
|
Iliev, Iliycho Petkov
|
|
|
19 |
3 |
p. 1187-1191
|
artikel
|
| 34 |
Ternary inverter gate designs using OPV5-based single-molecule field-effect transistors
|
Tirgar Fakheri, Masoomeh
|
|
|
19 |
3 |
p. 1047-1060
|
artikel
|
| 35 |
The application of artificial neural networks in solid-state photoacoustics for the recognition of microphone response effects in the frequency domain
|
Jordović-Pavlović, M. I.
|
|
|
19 |
3 |
p. 1268-1280
|
artikel
|
| 36 |
The design and analysis of a dual-diamond-ring PCF-based sensor
|
Paul, Bikash Kumar
|
|
|
19 |
3 |
p. 1288-1294
|
artikel
|
| 37 |
The impact of point defects on the optical and electrical properties of cubic ZrO2
|
Boujnah, M.
|
|
|
19 |
3 |
p. 940-946
|
artikel
|
| 38 |
The memristive system behavior of a diac
|
Karakulak, Ertuğrul
|
|
|
19 |
3 |
p. 1344-1355
|
artikel
|
| 39 |
Three-dimensional analytical modeling for small-geometry AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs)
|
Venish Kumar, T.
|
|
|
19 |
3 |
p. 1107-1115
|
artikel
|
| 40 |
Tunable thermal conductivity of single layer MoS2 nanoribbons: an equilibrium molecular dynamics study
|
Mamun, Md Asaduz Zaman
|
|
|
19 |
3 |
p. 957-965
|
artikel
|
| 41 |
Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor
|
Singh, Shailendra
|
|
|
19 |
3 |
p. 1154-1163
|
artikel
|
| 42 |
Ultrawide-bandgap AlGaN-based HEMTs for high-power switching
|
Shuvo, Arefin Ahamed
|
|
|
19 |
3 |
p. 1100-1106
|
artikel
|
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