| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes
|
Carrillo, José A.
|
|
2003
|
|
2-4 |
p. 375-380
|
artikel
|
| 2 |
Advanced Electromagnetic Modelling of Multilayer Monolithic Microwave Integrated Circuit
|
Toscano, Alessandro
|
|
2003
|
|
2-4 |
p. 469-473
|
artikel
|
| 3 |
Advanced Simulation of Semiconductor Devices by Artificial Neural Networks
|
Caddemi, A.
|
|
2003
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|
2-4 |
p. 301-307
|
artikel
|
| 4 |
A Methodology for Quantitatively Introducing ‘Atomistic’ Fluctuations into Compact Device Models for Circuit Analysis
|
Roy, S.
|
|
2003
|
|
2-4 |
p. 427-431
|
artikel
|
| 5 |
A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations
|
Kosina, H.
|
|
2003
|
|
2-4 |
p. 147-151
|
artikel
|
| 6 |
Analysis of Gate Dielectric Stacks Using the Transmitting Boundary Method
|
Gehring, A.
|
|
2003
|
|
2-4 |
p. 219-223
|
artikel
|
| 7 |
An Effective Potential Approach to Modeling 25 nm MOSFET Devices
|
Ahmed, S.
|
|
2003
|
|
2-4 |
p. 113-117
|
artikel
|
| 8 |
A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs
|
Boriçi, M.
|
|
2003
|
|
2-4 |
p. 163-167
|
artikel
|
| 9 |
Applicability of Quasi-3D and 3D MOSFET Simulations in the ‘Atomistic’ Regime
|
Roy, S.
|
|
2003
|
|
2-4 |
p. 423-426
|
artikel
|
| 10 |
A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions
|
Li, Yiming
|
|
2003
|
|
2-4 |
p. 491-495
|
artikel
|
| 11 |
“Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs
|
Fiori, G.
|
|
2003
|
|
2-4 |
p. 123-126
|
artikel
|
| 12 |
Ballistic Transport in SiGe and Strained-Si MOSFETs
|
Curatola, G.
|
|
2003
|
|
2-4 |
p. 309-312
|
artikel
|
| 13 |
BioMOCA: A Transport Monte Carlo Model for Ion Channels
|
van der Straaten, T.
|
|
2003
|
|
2-4 |
p. 231-237
|
artikel
|
| 14 |
Brownian Ionic Channel Simulation
|
Millar, C.
|
|
2003
|
|
2-4 |
p. 257-262
|
artikel
|
| 15 |
Coherent Phonon Scattering in Molecular Devices
|
Pecchia, A.
|
|
2003
|
|
2-4 |
p. 251-256
|
artikel
|
| 16 |
Comparison Between Non-Equilibrium Green's Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure
|
Guan, D.
|
|
2003
|
|
2-4 |
p. 335-339
|
artikel
|
| 17 |
Comparison of Double-Gate MOSFETs and FinFETs with Monte Carlo Simulation
|
Kathawala, Gulzar A.
|
|
2003
|
|
2-4 |
p. 85-89
|
artikel
|
| 18 |
Computational Issues in Modeling Ion Transport in Biological Channels: Self-Consistent Particle-Based Simulations
|
Aboud, S.
|
|
2003
|
|
2-4 |
p. 239-243
|
artikel
|
| 19 |
Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots
|
Sée, J.
|
|
2003
|
|
2-4 |
p. 449-453
|
artikel
|
| 20 |
Coupling Maxwell's Equations to Full Band Particle-Based Simulators
|
Ayubi-Moak, J.S.
|
|
2003
|
|
2-4 |
p. 183-190
|
artikel
|
| 21 |
Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs
|
Watling, J.R.
|
|
2003
|
|
2-4 |
p. 475-479
|
artikel
|
| 22 |
Design and Modelling of Photonic Band-Gap Resonance Cavity
|
Giorgio, Agostino
|
|
2003
|
|
2-4 |
p. 403-406
|
artikel
|
| 23 |
Does Circulation in Individual Current States Survive in the Total Current Density?
|
Laux, S.E.
|
|
2003
|
|
2-4 |
p. 105-108
|
artikel
|
| 24 |
3D Parallel Simulations of Fluctuation Effects in pHEMTs
|
García-Loureiro, A.J.
|
|
2003
|
|
2-4 |
p. 369-373
|
artikel
|
| 25 |
Editorial
|
Lugli, Paolo
|
|
2003
|
|
2-4 |
p. 71-72
|
artikel
|
| 26 |
Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings
|
Li, Yiming
|
|
2003
|
|
2-4 |
p. 487-490
|
artikel
|
| 27 |
Efficient Computational Method for Ballistic Currents and Application to Single Quantum Dots
|
Sabathil, M.
|
|
2003
|
|
2-4 |
p. 269-273
|
artikel
|
| 28 |
Electrothermal Monte Carlo Simulations of InGaAs/AlGaAs HEMTs
|
Pilgrim, N.J.
|
|
2003
|
|
2-4 |
p. 207-211
|
artikel
|
| 29 |
Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method
|
Yamakawa, Shinya
|
|
2003
|
|
2-4 |
p. 481-485
|
artikel
|
| 30 |
First Principles Calculations of Auger Recombination and Impact Ionization Rates in Semiconductors
|
Picozzi, S.
|
|
2003
|
|
2-4 |
p. 197-202
|
artikel
|
| 31 |
Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations
|
Branlard, J.
|
|
2003
|
|
2-4 |
p. 213-217
|
artikel
|
| 32 |
Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs
|
Nakatsuji, Hiroshi
|
|
2003
|
|
2-4 |
p. 109-112
|
artikel
|
| 33 |
Full-Band Tunneling Currents in Nanometer-Scale MOS Structures
|
Sacconi, F.
|
|
2003
|
|
2-4 |
p. 439-442
|
artikel
|
| 34 |
Gauge-Invariant Formulation of Fermi's Golden Rule and Its Application to High-Field Transport in Semiconductors
|
Ciancio, Emanuele
|
|
2003
|
|
2-4 |
p. 173-176
|
artikel
|
| 35 |
Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices
|
Barker, John R.
|
|
2003
|
|
2-4 |
p. 153-161
|
artikel
|
| 36 |
High Electron Mobility Limited by Remote Impurity Scattering
|
Hamaguchi, C.
|
|
2003
|
|
2-4 |
p. 169-171
|
artikel
|
| 37 |
Influence of Carrier Mobility and Interface Trap States on the Transfer and Output Characteristics of Organic Thin Film Transistors
|
Bolognesi, A.
|
|
2003
|
|
2-4 |
p. 297-300
|
artikel
|
| 38 |
Ion Channels as Devices
|
Eisenberg, Bob
|
|
2003
|
|
2-4 |
p. 245-249
|
artikel
|
| 39 |
Kinetic Lattice Monte Carlo Simulations of Ad-Dimer Diffusion on the Silicon (100) Surface
|
Akis, R.
|
|
2003
|
|
2-4 |
p. 497-500
|
artikel
|
| 40 |
Microscopic Description of Nanostructures Grown on (N11) Surfaces
|
Povolotskyi, Michael
|
|
2003
|
|
2-4 |
p. 275-279
|
artikel
|
| 41 |
Microscopic Modelling of Opto-Electronic Quantum Devices: A Predictive Simulation Tool
|
Iotti, Rita C.
|
|
2003
|
|
2-4 |
p. 191-195
|
artikel
|
| 42 |
Microscopic Modelling of Quantum Open Systems: A Generalized Wigner-Function Approach
|
Zaccaria, Remo Proietti
|
|
2003
|
|
2-4 |
p. 141-145
|
artikel
|
| 43 |
Mobility Variations in Ultra Small Devices due to Random Discrete Dopants
|
Alexander, Craig
|
|
2003
|
|
2-4 |
p. 285-289
|
artikel
|
| 44 |
Modeling Decoherence Effects on the Transport Properties of Mesoscopic Devices
|
Pala, M.G.
|
|
2003
|
|
2-4 |
p. 393-396
|
artikel
|
| 45 |
Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices
|
Gilbert, M.J.
|
|
2003
|
|
2-4 |
p. 329-334
|
artikel
|
| 46 |
Modeling Hot-Electron Injection in pFET's
|
Duffy, Chris
|
|
2003
|
|
2-4 |
p. 317-322
|
artikel
|
| 47 |
Modeling Nonlinear Propagation of Optical Signals in Semiconductor Optical Amplifiers
|
Reale, Andrea
|
|
2003
|
|
2-4 |
p. 413-416
|
artikel
|
| 48 |
Modelling Photonic Band-Gap Structures having Multiple Defects
|
Giorgio, Agostino
|
|
2003
|
|
2-4 |
p. 397-401
|
artikel
|
| 49 |
Monte Carlo, Hydrodynamic and Drift-Diffusion Simulation of Scaled Double-Gate MOSFETs
|
Bufler, F.M.
|
|
2003
|
|
2-4 |
p. 81-84
|
artikel
|
| 50 |
Monte Carlo Simulation of Electronic Noise in Semiconductor Materials and Devices Operating under Cyclostationary Conditions
|
Shiktorov, P.
|
|
2003
|
|
2-4 |
p. 455-458
|
artikel
|
| 51 |
Monte Carlo Simulations of THz Quantum-Cascade Lasers
|
Manenti, M.
|
|
2003
|
|
2-4 |
p. 433-437
|
artikel
|
| 52 |
Numerical Analysis of Tunneling Between Stacked Quantum Wires with the Inclusion of the Effects from Effective Mass Discontinuities
|
Bonci, L.
|
|
2003
|
|
2-4 |
p. 127-130
|
artikel
|
| 53 |
Numerical Techniques for the Evaluation of Conductance and Noise in the Presence of a Perpendicular Magnetic Field
|
Marconcini, P.
|
|
2003
|
|
2-4 |
p. 387-391
|
artikel
|
| 54 |
Physics-Based Correction of Extracted Conductance Parameters of Nonlinear Microwave Semiconductor Devices
|
Leuzzi, G.
|
|
2003
|
|
2-4 |
p. 357-362
|
artikel
|
| 55 |
Proximity Effect of the Contacts on Electron Transport in Mesoscopic Devices
|
Bertoni, Andrea
|
|
2003
|
|
2-4 |
p. 137-140
|
artikel
|
| 56 |
Quantum and Semi-Classical Transport in NEMO 1-D
|
Klimeck, Gerhard
|
|
2003
|
|
2-4 |
p. 177-182
|
artikel
|
| 57 |
Quantum Aspects of Resolving Discrete Charges in ‘Atomistic’ Device Simulations
|
Roy, Gareth
|
|
2003
|
|
2-4 |
p. 323-327
|
artikel
|
| 58 |
Quantum Control of Capture Processes into Localized States of a Quantum Dot
|
Kuhn, T.
|
|
2003
|
|
2-4 |
p. 263-267
|
artikel
|
| 59 |
Quantum Corrected Monte Carlo Simulation of Semiconductor Devices Using the Effective Conduction-Band Edge Method
|
Tang, Ting-Wei
|
|
2003
|
|
2-4 |
p. 131-135
|
artikel
|
| 60 |
Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs
|
Takeda, H.
|
|
2003
|
|
2-4 |
p. 119-122
|
artikel
|
| 61 |
Quantum Monte Carlo Device Simulation of Nano-Scaled SOI-MOSFETs
|
Tsuchiya, Hideaki
|
|
2003
|
|
2-4 |
p. 91-95
|
artikel
|
| 62 |
Restoration of Magnetization Distributions from Joint Magnetic Force Microscopy Measurements and Micromagnetic Simulations
|
Csaba, G.
|
|
2003
|
|
2-4 |
p. 225-229
|
artikel
|
| 63 |
Scaling MOSFETs to the Limit: A Physicists's Perspective
|
Fischetti, M.V.
|
|
2003
|
|
2-4 |
p. 73-79
|
artikel
|
| 64 |
Schottky Barrier Height at Organic/Metal Junctions from First-Principles
|
Picozzi, S.
|
|
2003
|
|
2-4 |
p. 407-411
|
artikel
|
| 65 |
Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation
|
Ezaki, Tatsuya
|
|
2003
|
|
2-4 |
p. 97-103
|
artikel
|
| 66 |
Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs
|
Krishnan, Santhosh
|
|
2003
|
|
2-4 |
p. 443-448
|
artikel
|
| 67 |
Semiclassical and Quantum Transport in Si/SiO2 Superlattices
|
Rosini, M.
|
|
2003
|
|
2-4 |
p. 417-422
|
artikel
|
| 68 |
Signatures of a Discrete Level Spectrum and Dynamical Tunneling in the Conductance of a Large Open Quantum Dot
|
Akis, R.
|
|
2003
|
|
2-4 |
p. 281-284
|
artikel
|
| 69 |
Simulation of Carrier Transport in p-Si/SiGe Quantum Cascade Emitters
|
Ikonić, Z.
|
|
2003
|
|
2-4 |
p. 353-356
|
artikel
|
| 70 |
Simulation of Electron Decoherence Induced by Carrier-Carrier Scattering
|
Bertoni, Andrea
|
|
2003
|
|
2-4 |
p. 291-295
|
artikel
|
| 71 |
Simulation of Lag Phenomena and Pulsed I-V Curves of Compound Semiconductor FETs as Affected by Impact Ionization
|
Kazami, Y.
|
|
2003
|
|
2-4 |
p. 203-206
|
artikel
|
| 72 |
Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs
|
Yang, L.
|
|
2003
|
|
2-4 |
p. 363-368
|
artikel
|
| 73 |
Simulation Study of High Performance III-V MOSFETs for Digital Applications
|
Kalna, K.
|
|
2003
|
|
2-4 |
p. 341-345
|
artikel
|
| 74 |
Splitting-Scheme Solution of the Collisionless Wigner Equation with Non-Parabolic Band Profile
|
Demeio, Lucio
|
|
2003
|
|
2-4 |
p. 313-316
|
artikel
|
| 75 |
Study of RF Linearity in sub-50 nm MOSFETs Using Simulations
|
Ma, Wei
|
|
2003
|
|
2-4 |
p. 347-352
|
artikel
|
| 76 |
Terahertz Generation from Dynamic Free-Carrier Superlattice in n+nn+ InN Structures
|
Starikov, E.
|
|
2003
|
|
2-4 |
p. 465-468
|
artikel
|
| 77 |
The Density of States and the Pertinent Electronic Properties of the Quasi 2DEG in Simple and DMS Structures Subjected to an In-Plane Magnetic Field
|
Simserides, Constantinos
|
|
2003
|
|
2-4 |
p. 459-463
|
artikel
|
| 78 |
Two-Particle Eigenfunctions of Electrons Propagating in Two Parallel Quantum Wires
|
Marchi, Alex
|
|
2003
|
|
2-4 |
p. 381-385
|
artikel
|
| 79 |
Volume Contents
|
|
|
2003
|
|
2-4 |
p. 501-504
|
artikel
|
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