| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Band Transport Model for Highly Ordered Discotic Mesophases
|
Lever, Leon
|
|
2005
|
|
1-2 |
p. 101-104
|
artikel
|
| 2 |
A Computational Exploration of Lateral Channel Engineering to Enhance MOSFET Performance
|
Guo, Jing
|
|
2002
|
|
1-2 |
p. 185-189
|
artikel
|
| 3 |
A Computational Technique for Electron Energy States Calculation in Nano-Scopic Three-Dimensional InAs/GaAs Semiconductor Quantum Rings Simulation
|
Li, Yiming
|
|
2002
|
|
1-2 |
p. 227-230
|
artikel
|
| 4 |
A Coupled 3-D PNP/ECP Model for Ion Transport in Biological Ion Channels
|
Yang, Zhicheng
|
|
2005
|
|
1-2 |
p. 167-170
|
artikel
|
| 5 |
Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires
|
Uno, Shigeyasu
|
|
2010
|
|
1-2 |
p. 104-120
|
artikel
|
| 6 |
Acoustic Phonons and Phonon Bottleneck in Single Wall Nanotubes
|
Raichura, Amit
|
|
2005
|
|
1-2 |
p. 91-95
|
artikel
|
| 7 |
A 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures
|
Brown, Andrew R.
|
|
2002
|
|
1-2 |
p. 165-169
|
artikel
|
| 8 |
Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology
|
Srivastava, Viranjay M.
|
|
2011
|
|
1-2 |
p. 229-240
|
artikel
|
| 9 |
Analysis of narrow terahertz microstrip transmission-line on multilayered substrate
|
Jha, Kumud Ranjan
|
|
2010
|
|
1-2 |
p. 186-194
|
artikel
|
| 10 |
An Analytical 1-D Model for Ion Implantation of Any Species into Single-Crystal Silicon Based on Legendre Polynomials
|
Shrivastav, G.
|
|
2002
|
|
1-2 |
p. 247-250
|
artikel
|
| 11 |
An Application of the Recombination and Generation Theory by Shockley, Read and Hall to Biological Ion Channels
|
Hu, Sai
|
|
2005
|
|
1-2 |
p. 153-156
|
artikel
|
| 12 |
A Particle Description Model for Quantum Tunneling Effects
|
Tsuchiya, Hideaki
|
|
2002
|
|
1-2 |
p. 295-299
|
artikel
|
| 13 |
Application of the R-matrix method in quantum transport simulations
|
Mil’nikov, Gennady
|
|
2011
|
|
1-2 |
p. 51-64
|
artikel
|
| 14 |
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches
|
Affinito, Fabio
|
|
2005
|
|
1-2 |
p. 171-174
|
artikel
|
| 15 |
A Space Dependent Wigner Equation Including Phonon Interaction
|
Nedjalkov, M.
|
|
2002
|
|
1-2 |
p. 27-31
|
artikel
|
| 16 |
Atomistic Modeling of Metal-Nanotube Contacts
|
Kienle, Diego
|
|
2005
|
|
1-2 |
p. 97-100
|
artikel
|
| 17 |
Atomistic Simulation of the Electronic Transport in Organic Nanostructures: Electron-Phonon and Electron-Electron Interactions
|
Pecchia, Alessandro
|
|
2005
|
|
1-2 |
p. 79-82
|
artikel
|
| 18 |
A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs
|
Abdi, M. A.
|
|
2010
|
|
1-2 |
p. 179-185
|
artikel
|
| 19 |
A Wigner Function Based Ensemble Monte Carlo Approach for Accurate Incorporation of Quantum Effects in Device Simulation
|
Shifren, L.
|
|
2002
|
|
1-2 |
p. 55-58
|
artikel
|
| 20 |
Band-Structure and Quantum Effects on Hole Transport in p-MOSFETs
|
Krishnan, Santhosh
|
|
2005
|
|
1-2 |
p. 27-30
|
artikel
|
| 21 |
Band-to-Band Tunneling by Monte Carlo Simulation for Prediction of MOSFET Gate-Induced Drain Leakage Current
|
Kan, Edwin C.
|
|
2002
|
|
1-2 |
p. 223-226
|
artikel
|
| 22 |
Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides Using Complex Band Models For SiO2
|
Sakai, Atsushi
|
|
2002
|
|
1-2 |
p. 195-199
|
artikel
|
| 23 |
Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs?
|
Watling, J.R.
|
|
2002
|
|
1-2 |
p. 289-293
|
artikel
|
| 24 |
Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFET
|
Maouhoub, N.
|
|
2010
|
|
1-2 |
p. 141-143
|
artikel
|
| 25 |
Code for the 3D Simulation of Nanoscale Semiconductor Devices, Including Drift-Diffusion and Ballistic Transport in 1D and 2D Subbands, and 3D Tunneling
|
Fiori, G.
|
|
2005
|
|
1-2 |
p. 63-66
|
artikel
|
| 26 |
Compact modeling and simulation of nanoscale fully depleted DG-SOI MOSFETS
|
Sharma, Rajeev
|
|
2011
|
|
1-2 |
p. 201-209
|
artikel
|
| 27 |
Comparison of Monte Carlo and NEGF Simulations of Double Gate MOSFETs
|
Ravishankar, R.
|
|
2005
|
|
1-2 |
p. 39-43
|
artikel
|
| 28 |
Comparison of Non-Equilibrium Green’s Function and Quantum-Corrected Monte Carlo Approaches in Nano MOS Simulation
|
Tsuchiya, Hideaki
|
|
2005
|
|
1-2 |
p. 35-38
|
artikel
|
| 29 |
Comparison of Quantum Corrections for Monte Carlo Simulation
|
Winstead, Brian
|
|
2002
|
|
1-2 |
p. 201-207
|
artikel
|
| 30 |
Comparison of Three Quantum Correction Models for the Charge Density in MOS Inversion Layers
|
Wang, Xinlin
|
|
2002
|
|
1-2 |
p. 283-287
|
artikel
|
| 31 |
Comprehensive Simulation of Vertical Cavity Surface Emitting Lasers: Inclusion of a Many-Body Gain Model
|
Witzigmann, Bernd
|
|
2005
|
|
1-2 |
p. 7-10
|
artikel
|
| 32 |
Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices
|
Ancona, M. G.
|
|
2011
|
|
1-2 |
p. 65-97
|
artikel
|
| 33 |
3D Monte Carlo Modeling of Thin SOI MOSFETs Including the Effective Potential and Random Dopant Distribution
|
Ramey, S.M.
|
|
2002
|
|
1-2 |
p. 267-271
|
artikel
|
| 34 |
3-D Parallel Monte Carlo Simulation of Sub-0.1 Micron MOSFETs on a Cluster Based Supercomputer
|
Kepkep, Asim
|
|
2002
|
|
1-2 |
p. 171-174
|
artikel
|
| 35 |
Dynamic bond-order force field
|
Watanabe, Takanobu
|
|
2011
|
|
1-2 |
p. 2-20
|
artikel
|
| 36 |
Editorial
|
Ravaioli, Umberto
|
|
2002
|
|
1-2 |
p. 7
|
artikel
|
| 37 |
Eigenstate Selection in Open Quantum Dot Systems: On the True Nature of Level Broadening
|
Akis, R.
|
|
2002
|
|
1-2 |
p. 9-15
|
artikel
|
| 38 |
Electro-Chemical Modeling Challenges of Biological Ion Pumps
|
Rakowski, Robert F.
|
|
2005
|
|
1-2 |
p. 189-193
|
artikel
|
| 39 |
Empirical Pseudopotential Method for the Band Structure Calculation of Strained-Silicon Germanium Materials
|
Gonzalez, Salvador
|
|
2002
|
|
1-2 |
p. 179-183
|
artikel
|
| 40 |
Equivalent-circuit model for electrostatic micro-torsion mirror
|
Matsuda, Kazunori
|
|
2011
|
|
1-2 |
p. 136-140
|
artikel
|
| 41 |
Erratum to: Application of the R-matrix method in quantum transport simulations
|
Mil’nikov, Gennady
|
|
2011
|
|
1-2 |
p. 268
|
artikel
|
| 42 |
Erratum to: Parity induced edge-current saturation and current distribution in zigzag-edged graphene nano-ribbon devices
|
Souma, Satofumi
|
|
2011
|
|
1-2 |
p. 269
|
artikel
|
| 43 |
Error Analysis of the Poisson P3M Force Field Scheme for Particle-Based Simulations of Biological Systems
|
Marreiro, David
|
|
2005
|
|
1-2 |
p. 179-183
|
artikel
|
| 44 |
Fano Resonance Through Quantum Dots in Tunable Aharonov-Bohm Rings
|
Joe, Y. S.
|
|
2005
|
|
1-2 |
p. 129-133
|
artikel
|
| 45 |
Foreword
|
Yu, Zhiping
|
|
2011
|
|
1-2 |
p. 1
|
artikel
|
| 46 |
Full-Band Monte Carlo Simulation of Two-Dimensional Electron Gas in SOI MOSFETs
|
Takeda, H.
|
|
2002
|
|
1-2 |
p. 219-222
|
artikel
|
| 47 |
Full-Band Particle-Based Analysis of Device Scaling for 3D Tri-Gate FETs
|
Chiney, P.
|
|
2005
|
|
1-2 |
p. 45-49
|
artikel
|
| 48 |
Full Quantum Simulation of Silicon-on-Insulator Single-Electron Devices
|
Heinz, Frederik Ole
|
|
2002
|
|
1-2 |
p. 161-164
|
artikel
|
| 49 |
Fully Numerical Monte Carlo Simulator for Noncubic Symmetry Semiconductors
|
Tirino, Louis
|
|
2002
|
|
1-2 |
p. 231-234
|
artikel
|
| 50 |
Gate leakage behavior of source/drain-to-gate non-overlapped MOSFET structure
|
Rana, Ashwani K.
|
|
2011
|
|
1-2 |
p. 222-228
|
artikel
|
| 51 |
Hilbert Graph: An Expandable Interconnection for Clusters
|
Rodríguez-Salazar, Fernando
|
|
2005
|
|
1-2 |
p. 145-148
|
artikel
|
| 52 |
Hole Transport in Orthorhombically Strained Silicon
|
Bufler, F.M.
|
|
2002
|
|
1-2 |
p. 175-177
|
artikel
|
| 53 |
Hybrid LSDA/Diffusion Quantum Monte-Carlo Method for Spin Sequences in Vertical Quantum Dots
|
Matagne, P.
|
|
2002
|
|
1-2 |
p. 135-139
|
artikel
|
| 54 |
Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM)
|
García-Ramírez, Mario A.
|
|
2011
|
|
1-2 |
p. 248-257
|
artikel
|
| 55 |
Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors
|
Wondmagegn, W. T.
|
|
2010
|
|
1-2 |
p. 144-153
|
artikel
|
| 56 |
Impact of the Coulomb interaction on nano-scale silicon device characteristics
|
Sano, Nobuyuki
|
|
2010
|
|
1-2 |
p. 98-103
|
artikel
|
| 57 |
Inductance modelling of SWCNT bundle interconnects using partial element equivalent circuit method
|
Choudhary, Sudhanshu
|
|
2011
|
|
1-2 |
p. 241-247
|
artikel
|
| 58 |
Low-Field Mobility and Quantum Effects in Asymmetric Silicon-Based Field-Effect Devices
|
Knezevic, I.
|
|
2002
|
|
1-2 |
p. 273-277
|
artikel
|
| 59 |
Magnetization and Magnetic Susceptibility in Nanoscale Vertically Coupled Semiconductor Quantum Rings
|
Li, Yiming
|
|
2005
|
|
1-2 |
p. 135-138
|
artikel
|
| 60 |
Manipulating of Resonances in Conductance of an Electron Waveguide with Anti-Dots
|
Satanin, Arkady M.
|
|
2005
|
|
1-2 |
p. 149-152
|
artikel
|
| 61 |
Modeling Challenges in Molecular Electronics on Silicon
|
Rakshit, T.
|
|
2005
|
|
1-2 |
p. 83-86
|
artikel
|
| 62 |
Modeling of complex oxide materials from the first principles: systematic applications to vanadates RVO3 with distorted perovskite structure
|
Solovyev, Igor
|
|
2011
|
|
1-2 |
p. 21-34
|
artikel
|
| 63 |
Modeling of Semiconductor Optical Amplifiers
|
Reale, Andrea
|
|
2002
|
|
1-2 |
p. 129-134
|
artikel
|
| 64 |
Modeling of Shallow Quantum Point Contacts Defined on AlGaAs/GaAs Heterostructures: The Effect of Surface States
|
Fiori, G.
|
|
2002
|
|
1-2 |
p. 39-42
|
artikel
|
| 65 |
Modeling of the Electrostatic (Plasmon) Resonances in Metallic and Semiconductor Nanoparticles
|
Mayergoyz, Isaak D.
|
|
2005
|
|
1-2 |
p. 139-143
|
artikel
|
| 66 |
Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures
|
Ting, D.Z.-Y.
|
|
2002
|
|
1-2 |
p. 147-151
|
artikel
|
| 67 |
Molecular Devices Simulations Based on Density Functional Tight-Binding
|
Di Carlo, Aldo
|
|
2002
|
|
1-2 |
p. 109-112
|
artikel
|
| 68 |
Monte Carlo Based Calculation of the Electron Dynamics in a Two-Dimensional GaN/AlGaN Heterostructure in the Presence of Strain Polarization Fields
|
Yu, Tsung-Hsing
|
|
2002
|
|
1-2 |
p. 209-214
|
artikel
|
| 69 |
Monte-Carlo Simulation of Clocked and Non-Clocked QCA Architectures
|
Bonci, L.
|
|
2002
|
|
1-2 |
p. 49-53
|
artikel
|
| 70 |
Monte Carlo Simulations of Hole Dynamics in Si/SiGe Quantum Cascade Structures
|
Ikonić, Z.
|
|
2002
|
|
1-2 |
p. 191-194
|
artikel
|
| 71 |
Numerical Acceleration of Three-Dimensional Quantum Transport Method Using a Seven-Diagonal Pre-Conditioner
|
Ting, David Z.-Y.
|
|
2002
|
|
1-2 |
p. 93-97
|
artikel
|
| 72 |
Numerical Analysis of Coaxial Double Gate Schottky Barrier Carbon Nanotube Field Effect Transistors
|
Pourfath, Mahdi
|
|
2005
|
|
1-2 |
p. 75-78
|
artikel
|
| 73 |
Numerical Investigation of a Molecular Switch Based on Conformational Change, with the Inclusion of Contacts
|
Girlanda, Michele
|
|
2005
|
|
1-2 |
p. 87-90
|
artikel
|
| 74 |
Numerical Investigation of Shot Noise between the Ballistic and the Diffusive Regime
|
Macucci, M.
|
|
2002
|
|
1-2 |
p. 99-102
|
artikel
|
| 75 |
Numerical Study of Minority Carrier Induced Diffusion Capacitance in VCSELs Using Minilase
|
Liu, Yang
|
|
2002
|
|
1-2 |
p. 119-122
|
artikel
|
| 76 |
On Ohmic Boundary Conditions for Density-Gradient Theory
|
Ancona, M.G.
|
|
2002
|
|
1-2 |
p. 103-107
|
artikel
|
| 77 |
On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation
|
Barker, John R.
|
|
2002
|
|
1-2 |
p. 17-21
|
artikel
|
| 78 |
On the Current and Density Representation of Many-Body Quantum Transport Theory
|
Barker, John R.
|
|
2002
|
|
1-2 |
p. 23-26
|
artikel
|
| 79 |
On the Electron Transient Response in a 50 nm MOSFET by Ensemble Monte Carlo Simulation in Presence of the Smoothed Potential Algorithm
|
Formicone, Gabriele
|
|
2002
|
|
1-2 |
p. 251-255
|
artikel
|
| 80 |
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
|
Gnani, E.
|
|
2005
|
|
1-2 |
p. 71-74
|
artikel
|
| 81 |
On the Formation of Periodic Electric Field Domains in p-Si/SiGe Quantum Cascade Structures
|
IkoniĆ, Z.
|
|
2005
|
|
1-2 |
p. 11-14
|
artikel
|
| 82 |
Optical and Electrical Properties of Colloidal Quantum Dots in Electrolytic Environments: Using Biomolecular Links in Chemically-Directed Assembly of Quantum Dot Networks
|
Stroscio, Michael A.
|
|
2005
|
|
1-2 |
p. 21-25
|
artikel
|
| 83 |
Parallel Approaches for Particle-Based Simulation of Charge Transport in Semiconductors
|
Saraniti, M.
|
|
2002
|
|
1-2 |
p. 215-218
|
artikel
|
| 84 |
Parallelization of the Nanoelectronic Modeling Tool (NEMO 1-D) on a Beowulf Cluster
|
Klimeck, Gerhard
|
|
2002
|
|
1-2 |
p. 75-79
|
artikel
|
| 85 |
Parity induced edge-current saturation and current distribution in zigzag-edged graphene nano-ribbon devices
|
Souma, Satofumi
|
|
2011
|
|
1-2 |
p. 35-43
|
artikel
|
| 86 |
Piezoresistive effect in p-type silicon classical nanowires at high uniaxial strains
|
Kozlovskiy, S. I.
|
|
2011
|
|
1-2 |
p. 258-267
|
artikel
|
| 87 |
Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor
|
Sels, Dries
|
|
2011
|
|
1-2 |
p. 216-221
|
artikel
|
| 88 |
Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices
|
Latessa, L.
|
|
2005
|
|
1-2 |
p. 51-55
|
artikel
|
| 89 |
Quantum Corrections in the Monte Carlo Simulations of Scaled PHEMTs with Multiple Delta Doping
|
Kalna, K.
|
|
2002
|
|
1-2 |
p. 257-261
|
artikel
|
| 90 |
Quantum Mechanical Model of Electronic Stopping Power for Ions in a Free Electron Gas
|
Chen, Yang
|
|
2002
|
|
1-2 |
p. 241-245
|
artikel
|
| 91 |
Quantum Potential Approach to Modeling Nanoscale MOSFETs
|
Ahmed, Shaikh S.
|
|
2005
|
|
1-2 |
p. 57-61
|
artikel
|
| 92 |
Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces
|
Watling, J.R.
|
|
2002
|
|
1-2 |
p. 279-282
|
artikel
|
| 93 |
Quantum transport of holes in 1D, 2D, and 3D devices: the k⋅p method
|
Shin, Mincheol
|
|
2011
|
|
1-2 |
p. 44-50
|
artikel
|
| 94 |
Quantum Transport Simulation of Carrier Capture and Transport within Tunnel Injection Lasers
|
Chen, Wanqiang
|
|
2002
|
|
1-2 |
p. 123-127
|
artikel
|
| 95 |
Role of Carrier Capture in Microscopic Simulation of Multi-Quantum-Well Semiconductor Laser Diodes
|
Hybertsen, M.S.
|
|
2002
|
|
1-2 |
p. 113-118
|
artikel
|
| 96 |
RTD Relaxation Oscillations, the Time Dependent Wigner Equation and Phase Noise
|
Grubin, H.L.
|
|
2002
|
|
1-2 |
p. 33-37
|
artikel
|
| 97 |
Screening of Water Dipoles Inside Finite-Length Armchair Carbon Nanotubes
|
Li, Yan
|
|
2005
|
|
1-2 |
p. 161-165
|
artikel
|
| 98 |
Search for Optimum and Scalable COSMOS
|
Kaya, Savas
|
|
2005
|
|
1-2 |
p. 119-123
|
artikel
|
| 99 |
Self-heating in a coupled thermo-electric circuit-device model
|
Brunk, Markus
|
|
2010
|
|
1-2 |
p. 163-178
|
artikel
|
| 100 |
Simulation of Field Coupled Computing Architectures Based on Magnetic Dot Arrays
|
Csaba, György
|
|
2002
|
|
1-2 |
p. 87-91
|
artikel
|
| 101 |
Simulation of Ion Conduction in the ompF Porin Channel Using BioMOCA
|
Lee, Kyu-Il
|
|
2005
|
|
1-2 |
p. 157-160
|
artikel
|
| 102 |
Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets
|
Csaba, G.
|
|
2005
|
|
1-2 |
p. 105-110
|
artikel
|
| 103 |
Simulation of Spin-Qubit Quantum Dot Circuit with Integrated Quantum Point Contact Read-Out
|
Zhang, L. X.
|
|
2005
|
|
1-2 |
p. 111-114
|
artikel
|
| 104 |
Study of Noise Properties in Nanoscale Electronic Devices Using Quantum Trajectories
|
Oriols, Xavier
|
|
2002
|
|
1-2 |
p. 43-48
|
artikel
|
| 105 |
Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET)
|
Takshi, Arash
|
|
2010
|
|
1-2 |
p. 154-162
|
artikel
|
| 106 |
Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms
|
Bendib, T.
|
|
2011
|
|
1-2 |
p. 210-215
|
artikel
|
| 107 |
The Effective Potential in Device Modeling: The Good, the Bad and the Ugly
|
Ferry, D.K.
|
|
2002
|
|
1-2 |
p. 59-65
|
artikel
|
| 108 |
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Kumar, Pradeep
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2010
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| 109 |
Theoretical Evidence of Spontaneous Spin Polarization in GaAs/AlGaAs Split-Gate Heterostructures
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Ashok, Ashwin
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2005
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| 110 |
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2002
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| 111 |
Theoretical Study of Molecular Quantum-Dot Cellular Automata
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Lu, Yuhui
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2005
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1-2 |
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| 112 |
Theoretical Study of RF Breakdown in GaN Wurtzite and Zincblende Phase MESFETs
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Weber, M.
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2002
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| 113 |
Thermally Self-Consistent Monte Carlo Device Simulations
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Pilgrim, N.J.
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2002
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| 114 |
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Aboud, Shela
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2005
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| 115 |
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Labukhin, Dmitry
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2005
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| 116 |
Three-Dimensional Quantum Transport Simulation of Ultra-Small FinFETs
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Takeda, H.
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2005
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| 117 |
Towards Fully Quantum Mechanical 3D Device Simulations
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Sabathil, M.
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2002
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| 118 |
Tracking the Propagation of Individual Ions Through Ion Channels with Nano-MOSFETs
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Millar, C.
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2005
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| 119 |
Tunneling through Thin Oxides—New Insights from Microscopic Calculations
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Städele, M.
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2002
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| 120 |
Unification of MOS compact models with the unified regional modeling approach
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Zhou, Xing
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2011
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| 121 |
Wigner Function-Based Simulation of Quantum Transport in Scaled DG-MOSFETs Using a Monte Carlo Method
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Gehring, Andreas
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2005
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| 122 |
Wigner Paths for Quantum Transport
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Bordone, Paolo
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2002
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