| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Chemical Etching of InAs, InSb, and GaAs in H2O2HBr Solutions
|
Z. F. Tomashik
|
|
2002
|
38 |
5 |
p. 434-437
4 p.
|
artikel
|
| 2 |
Chemical Etching of InAs, InSb, and GaAs in H2O2–HBr Solutions
|
Tomashik, Z. F.
|
|
2002
|
38 |
5 |
p. 434-437
|
artikel
|
| 3 |
Chemical Vapor Deposition of Copper Films from Copper Dipivaloylmethanate in Hydrogen Atmosphere
|
Bakovets, V. V.
|
|
2002
|
38 |
5 |
p. 457-463
|
artikel
|
| 4 |
Chemical Vapor Deposition of Copper Films from Copper Dipivaloylmethanate in Hydrogen Atmosphere
|
V. V. Bakovets
|
|
2002
|
38 |
5 |
p. 457-463
7 p.
|
artikel
|
| 5 |
CurrentVoltage Characteristics of EuGa2S4〈Co〉 Single Crystals
|
O. B. Tagiev
|
|
2002
|
38 |
5 |
p. 445-446
2 p.
|
artikel
|
| 6 |
Current–Voltage Characteristics of EuGa2S4>Co< Single Crystals
|
Tagiev, O. B.
|
|
2002
|
38 |
5 |
p. 445-446
|
artikel
|
| 7 |
Enthalpy of the Transition from Octahedral to Square-Planar Oxygen Coordination of Mn3 and Enthalpy of Formation of NaMn7O12-Type Compounds from Constituent Oxides
|
L. A. Reznitskii
|
|
2002
|
38 |
5 |
p. 498-500
3 p.
|
artikel
|
| 8 |
Enthalpy of the Transition from Octahedral to Square-Planar Oxygen Coordination of Mn3+ and Enthalpy of Formation of NaMn7O12-Type Compounds from Constituent Oxides
|
Reznitskii, L. A.
|
|
2002
|
38 |
5 |
p. 498-500
|
artikel
|
| 9 |
Erbium Segregation in Silicon Layers Grown by Molecular-Beam Epitaxy
|
V. G. Shengurov
|
|
2002
|
38 |
5 |
p. 421-424
4 p.
|
artikel
|
| 10 |
Erbium Segregation in Silicon Layers Grown by Molecular-Beam Epitaxy
|
Shengurov, V. G.
|
|
2002
|
38 |
5 |
p. 421-424
|
artikel
|
| 11 |
Ga Doping of Thin PbTe Films on Si Substrates during Growth
|
Ugai, Ya. A.
|
|
2002
|
38 |
5 |
p. 450-456
|
artikel
|
| 12 |
Ga Doping of Thin PbTe Films on Si Substrates during Growth
|
Ya. A. Ugai
|
|
2002
|
38 |
5 |
p. 450-456
7 p.
|
artikel
|
| 13 |
Glass Formation in the ZrF4BaF2AlF3NaF, ZrF4BaF2LaF3NaF, and ZrF4BaF2LaF3AlF3 Systems
|
A. A. Babitsyna
|
|
2002
|
38 |
5 |
p. 512-521
10 p.
|
artikel
|
| 14 |
Glass Formation in the ZrF4–BaF2–AlF3–NaF, ZrF4–BaF2–LaF3–NaF, and ZrF4–BaF2–LaF3–AlF3 Systems
|
Babitsyna, A. A.
|
|
2002
|
38 |
5 |
p. 512-521
|
artikel
|
| 15 |
Growth Rate Effect on Nitrogen Aggregation in Synthetic Diamonds: Analysis of C- and A-Defect Distributions
|
Yu. V. Babich
|
|
2002
|
38 |
5 |
p. 464-467
4 p.
|
artikel
|
| 16 |
Growth Rate Effect on Nitrogen Aggregation in Synthetic Diamonds: Analysis of C- and A-Defect Distributions
|
Babich, Yu. V.
|
|
2002
|
38 |
5 |
p. 464-467
|
artikel
|
| 17 |
Influence of Structural Defects on Properties of Reactor Graphite
|
Yu. S. Virgil'ev
|
|
2002
|
38 |
5 |
p. 471-475
5 p.
|
artikel
|
| 18 |
Influence of Structural Defects on Properties of Reactor Graphite
|
Virgil'ev, Yu. S.
|
|
2002
|
38 |
5 |
p. 471-475
|
artikel
|
| 19 |
Magnesium Reduction of Titanium Tetrachloride
|
V. I. Evdokimov
|
|
2002
|
38 |
5 |
p. 490-493
4 p.
|
artikel
|
| 20 |
Magnesium Reduction of Titanium Tetrachloride
|
Evdokimov, V. I.
|
|
2002
|
38 |
5 |
p. 490-493
|
artikel
|
| 21 |
Metalorganic Chemical Vapor Deposition of Oxide Films on Semiconductor Substrates Using Aluminum, Gallium, and Indium Alkyl Chloride Precursors
|
O. N. Mittov
|
|
2002
|
38 |
5 |
p. 438-444
7 p.
|
artikel
|
| 22 |
Metalorganic Chemical Vapor Deposition of Oxide Films on Semiconductor Substrates Using Aluminum, Gallium, and Indium Alkyl Chloride Precursors
|
Mittov, O. N.
|
|
2002
|
38 |
5 |
p. 438-444
|
artikel
|
| 23 |
Phase Transformations in the Y2Cu2O5BaCuO2 System
|
N. A. Kalanda
|
|
2002
|
38 |
5 |
p. 494-497
4 p.
|
artikel
|
| 24 |
Phase Transformations in the Y2Cu2O5–BaCuO2 System
|
Kalanda, N. A.
|
|
2002
|
38 |
5 |
p. 494-497
|
artikel
|
| 25 |
Physicochemical Modeling of Solid–Liquid Interfacial Processes
|
Prikhod'ko, E. V.
|
|
2002
|
38 |
5 |
p. 507-511
|
artikel
|
| 26 |
Physicochemical Modeling of SolidLiquid Interfacial Processes
|
E. V. Prikhod'ko
|
|
2002
|
38 |
5 |
p. 507-511
5 p.
|
artikel
|
| 27 |
Potentials of Graphite Nitrate Formation during Spontaneous and Electrochemical Graphite Intercalation
|
N. E. Sorokina
|
|
2002
|
38 |
5 |
p. 482-489
8 p.
|
artikel
|
| 28 |
Potentials of Graphite Nitrate Formation during Spontaneous and Electrochemical Graphite Intercalation
|
Sorokina, N. E.
|
|
2002
|
38 |
5 |
p. 482-489
|
artikel
|
| 29 |
Preparation and Magnetic Properties of CuCr1 – xMnxS2 Solid Solutions
|
Al'mukhametov, R. F.
|
|
2002
|
38 |
5 |
p. 447-449
|
artikel
|
| 30 |
Preparation and Magnetic Properties of CuCr1 xMnxS2 Solid Solutions
|
R. F. Al'mukhametov
|
|
2002
|
38 |
5 |
p. 447-449
3 p.
|
artikel
|
| 31 |
Role of Activated Carbon in Chemical Interactions in the FeCNaClH2OO2 Heat-Generating System
|
N. F. Drobot
|
|
2002
|
38 |
5 |
p. 501-506
6 p.
|
artikel
|
| 32 |
Role of Activated Carbon in Chemical Interactions in the Fe–C–NaCl–H2O–O2 Heat-Generating System
|
Drobot, N. F.
|
|
2002
|
38 |
5 |
p. 501-506
|
artikel
|
| 33 |
Sintering Behavior of Capacitor and Resonator Ceramics
|
V. M. Ishchuk
|
|
2002
|
38 |
5 |
p. 526-528
3 p.
|
artikel
|
| 34 |
Sintering Behavior of Capacitor and Resonator Ceramics
|
Ishchuk, V. M.
|
|
2002
|
38 |
5 |
p. 526-528
|
artikel
|
| 35 |
Solubility of Impurities in Silicon Carbide during Vapor Growth
|
I. I. Parfenova
|
|
2002
|
38 |
5 |
p. 476-481
6 p.
|
artikel
|
| 36 |
Solubility of Impurities in Silicon Carbide during Vapor Growth
|
Parfenova, I. I.
|
|
2002
|
38 |
5 |
p. 476-481
|
artikel
|
| 37 |
Thermal Conductivity of Isotopically Modified Silicon: Current Status of Research1
|
A. V. Inyushkin
|
|
2002
|
38 |
5 |
p. 427-433
7 p.
|
artikel
|
| 38 |
Thermal Conductivity of Isotopically Modified Silicon: Current Status of Research1
|
Inyushkin, A. V.
|
|
2002
|
38 |
5 |
p. 427-433
|
artikel
|
| 39 |
Thermodynamics and Kinetics of Carbon Deposition from Mixtures of Hydrogen and Carbon Tetrachloride
|
A. V. Elyutin
|
|
2002
|
38 |
5 |
p. 468-470
3 p.
|
artikel
|
| 40 |
Thermodynamics and Kinetics of Carbon Deposition from Mixtures of Hydrogen and Carbon Tetrachloride
|
Elyutin, A. V.
|
|
2002
|
38 |
5 |
p. 468-470
|
artikel
|
| 41 |
TiO2–Bi2O3 Materials
|
Mazurkevich, Ya. S.
|
|
2002
|
38 |
5 |
p. 522-526
|
artikel
|
| 42 |
TiO2Bi2O3 Materials
|
Ya. S. Mazurkevich
|
|
2002
|
38 |
5 |
p. 522-526
5 p.
|
artikel
|
| 43 |
Toward 28Si through Trichlorosilane1
|
A. P. Babichev
|
|
2002
|
38 |
5 |
p. 425-426
2 p.
|
artikel
|
| 44 |
Toward 28Si through Trichlorosilane1
|
Babichev, A. P.
|
|
2002
|
38 |
5 |
p. 425-426
|
artikel
|
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