nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Aluminum metallization and wire bonding aging in power MOSFET modules
|
Ruffilli, R. |
|
2018 |
|
6P3 |
p. 14641-14651 |
artikel |
2 |
Atomic scale mechanisms and brittle to ductile transition at low size in silicon
|
Brochard, Sandrine |
|
2018 |
|
6P3 |
p. 14693-14704 |
artikel |
3 |
Concerning vacancy defects generated by moving dislocations in Si
|
Kveder, Vitaly |
|
2018 |
|
6P3 |
p. 14757-14764 |
artikel |
4 |
Defect-induced Stress Imaging in Single and Multi-crystalline Semiconductor Materials
|
Herms, Martin |
|
2018 |
|
6P3 |
p. 14748-14756 |
artikel |
5 |
Dislocation contrast in electron channelling contrast images as projections of strain-like components
|
Pascal, E. |
|
2018 |
|
6P3 |
p. 14652-14661 |
artikel |
6 |
Line defects in crystals and flux pinning in superconductors Scientific work of Reiner Labusch (1935 – 2016)
|
Doyle, T.B. |
|
2018 |
|
6P3 |
p. 14662-14692 |
artikel |
7 |
Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence
|
Sobolev, N.A. |
|
2018 |
|
6P3 |
p. 14772-14777 |
artikel |
8 |
On a Plasticity by Partial Dislocations in Silicon at Very High Stress
|
Rabier, Jacques |
|
2018 |
|
6P3 |
p. 14705-14711 |
artikel |
9 |
Point and extended defect interaction in low – high energy phosphorus implantation sequences
|
Mica, I. |
|
2018 |
|
6P3 |
p. 14778-14784 |
artikel |
10 |
Preface
|
Regula, Gabrielle |
|
2018 |
|
6P3 |
p. 14639-14640 |
artikel |
11 |
Strain buildup in 4H-SiC implanted with noble gases at low dose
|
Jiang, C. |
|
2018 |
|
6P3 |
p. 14722-14731 |
artikel |
12 |
Structural, optical, and interface properties of sputtered AlN thin films under different hydrogen dilution conditions
|
Montañez, L |
|
2018 |
|
6P3 |
p. 14765-14771 |
artikel |
13 |
Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM
|
Lantreibecq, A. |
|
2018 |
|
6P3 |
p. 14732-14747 |
artikel |
14 |
Temperature dependence of luminescence from dislocated Ge on Si substrate
|
Schwartz, Bernhard |
|
2018 |
|
6P3 |
p. 14712-14721 |
artikel |