| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A corrlation of chemical & electrical properties of polycrystal & single crystal InP
|
Jacob, G.
|
|
1990
|
|
5 |
p. 28-29
2 p.
|
artikel
|
| 2 |
A dynamic SIMS study of interdiffusion in GaAs/AIAs heterostructures
|
Hibbert, S
|
|
1990
|
|
5 |
p. 16-17
2 p.
|
artikel
|
| 3 |
America's best Jo Ann McDonald talks to Ron Rosenzweig - Part 2
|
|
|
1989
|
|
5 |
p. 35-
1 p.
|
artikel
|
| 4 |
ASC/INCO to co-develop metal alloys for super-conducting wires
|
|
|
1990
|
|
5 |
p. 6-
1 p.
|
artikel
|
| 5 |
Crystal specialties appoints Mi-Net as UK representative
|
|
|
1989
|
|
5 |
p. 36-
1 p.
|
artikel
|
| 6 |
Diagnosing out-of-spec MMICs
|
|
|
1989
|
|
5 |
p. 14-
1 p.
|
artikel
|
| 7 |
Diary
|
|
|
1990
|
|
5 |
p. 48-
1 p.
|
artikel
|
| 8 |
Directory
|
|
|
1990
|
|
5 |
p. 47-
1 p.
|
artikel
|
| 9 |
Editorial — UK Electronics from bad to worse?
|
Szweda, Roy
|
|
1989
|
|
5 |
p. 4-
1 p.
|
artikel
|
| 10 |
GaAs vs Si A technology comparison
|
Saul, Peter H.
|
|
1989
|
|
5 |
p. 27-29
3 p.
|
artikel
|
| 11 |
GEC-marconi announces formation of materials technology group
|
|
|
1990
|
|
5 |
p. 6-
1 p.
|
artikel
|
| 12 |
Glassman distribution agreement with Elan
|
|
|
1990
|
|
5 |
p. 6-
1 p.
|
artikel
|
| 13 |
High quality InP single crystal from Sumitomo electric
|
Kawase, T.
|
|
1990
|
|
5 |
p. 19-21
3 p.
|
artikel
|
| 14 |
III–V Si heterostructure study forecasts $10bn+ market by year 2000
|
|
|
1990
|
|
5 |
p. 11-
1 p.
|
artikel
|
| 15 |
In brief
|
|
|
1990
|
|
5 |
p. 11-
1 p.
|
artikel
|
| 16 |
In Brief
|
|
|
1990
|
|
5 |
p. 11-
1 p.
|
artikel
|
| 17 |
Index to advertisers
|
|
|
1990
|
|
5 |
p. 50-
1 p.
|
artikel
|
| 18 |
Jo Ann talks with Bryant Welch of Cray Computer Corporation about the future of advanced GaAs digital IC technology
|
|
|
1990
|
|
5 |
p. 36-37
2 p.
|
artikel
|
| 19 |
Johnson Matthey electronics — a total quality management approach to customer support
|
Waldron, Tim
|
|
1990
|
|
5 |
p. 26-27
2 p.
|
artikel
|
| 20 |
Long LEC-GaAs single crystals Developments from Sumitomo
|
|
|
1989
|
|
5 |
p. 12-13
2 p.
|
artikel
|
| 21 |
‘Manufacturability’ Delivering performance with GaAs ICs
|
|
|
1989
|
|
5 |
p. 20-22
3 p.
|
artikel
|
| 22 |
Microfabrication using focused ion beams
|
Gamo, Kenji
|
|
1990
|
|
5 |
p. 41-42
2 p.
|
artikel
|
| 23 |
Mitsubishi new GaAs FETs & MMICs
|
|
|
1990
|
|
5 |
p. 6-
1 p.
|
artikel
|
| 24 |
MR semicon on year on
|
|
|
1990
|
|
5 |
p. 22-
1 p.
|
artikel
|
| 25 |
News
|
|
|
1989
|
|
5 |
p. 6-
1 p.
|
artikel
|
| 26 |
Plasma sources — The key to production x-ray lithography?
|
|
|
1989
|
|
5 |
p. 30-
1 p.
|
artikel
|
| 27 |
Profiling of compound semiconductors using point contact techniques: Part 2
|
Hillard, R.J.
|
|
1990
|
|
5 |
p. 31-33
3 p.
|
artikel
|
| 28 |
Properties of GaAs 2nd edition
|
|
|
1990
|
|
5 |
p. 14-
1 p.
|
artikel
|
| 29 |
Richard Eden of GigaBit logic
|
|
|
1989
|
|
5 |
p. 24-25
2 p.
|
artikel
|
| 30 |
RIE of Optpelectric structures by PJ Astell-Burt
|
Astell-Burt, J.
|
|
1989
|
|
5 |
p. 17-
1 p.
|
artikel
|
| 31 |
Secondary ion mass spectrometry — principles & applications
|
|
|
1990
|
|
5 |
p. 14-
1 p.
|
artikel
|
| 32 |
Taking the brakes off-are IC foundries in the industry's best interest?
|
Szweda, Roy
|
|
1990
|
|
5 |
p. 4-
1 p.
|
artikel
|
| 33 |
The inside edge — Finding common ground space
|
|
|
1989
|
|
5 |
p. 11-
1 p.
|
artikel
|
| 34 |
“The MOCVD challenge” & “Monolithic microwave IC technology & design”
|
|
|
1989
|
|
5 |
p. 38-
1 p.
|
artikel
|
| 35 |
19th European microwave conference
|
|
|
1989
|
|
5 |
p. 33-
1 p.
|
artikel
|
| 36 |
UET claims first in US to offer InP epi-wafers
|
|
|
1990
|
|
5 |
p. 11-
1 p.
|
artikel
|
| 37 |
Update
|
|
|
1990
|
|
5 |
p. 44-
1 p.
|
artikel
|
| 38 |
Zenith and MIT view the world of tomorrow
|
Ann Mcdonald, Jo
|
|
1990
|
|
5 |
p. 12-
1 p.
|
artikel
|
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