| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An isothermal etchback-regrowth method for high-efficiency Ga1−x Al xAsGaAs solar cells
|
Woodall, J.M.
|
|
1990
|
29 |
2-3 |
p. 173-177
5 p.
|
artikel
|
| 2 |
A process sequence for manufacture of ultra-thin, light-trapping silicon solar cells
|
Landis, Geoffrey A.
|
|
1990
|
29 |
2-3 |
p. 257-266
10 p.
|
artikel
|
| 3 |
High-efficiency Ga1-xAlxAs-GaAs solar cells
|
Woodall, J.M.
|
|
1990
|
29 |
2-3 |
p. 167-172
6 p.
|
artikel
|
| 4 |
Influence of controlled lifetime doping on ultimate technological performance of silicon solar cells
|
Fischer, H.
|
|
1990
|
29 |
2-3 |
p. 111-120
10 p.
|
artikel
|
| 5 |
InP solar cells for use in space
|
Weinberg, I.
|
|
1990
|
29 |
2-3 |
p. 225-244
20 p.
|
artikel
|
| 6 |
Introduction
|
|
|
1990
|
29 |
2-3 |
p. 179-181
3 p.
|
artikel
|
| 7 |
Introduction
|
|
|
1990
|
29 |
2-3 |
p. 83-85
3 p.
|
artikel
|
| 8 |
Low-high junction theory applied to solar cells
|
Godlewski, Michael P.
|
|
1990
|
29 |
2-3 |
p. 131-150
20 p.
|
artikel
|
| 9 |
Multijunction cells for space applications
|
Spitzer, Mark B.
|
|
1990
|
29 |
2-3 |
p. 183-203
21 p.
|
artikel
|
| 10 |
Radiation damage in Ge and Si detected by carrier lifetime changes: Damage thresholds
|
Loferski, J.J.
|
|
1990
|
29 |
2-3 |
p. 87-102
16 p.
|
artikel
|
| 11 |
Silicon single crystal solar cells for space applications
|
Iles, P.A.
|
|
1990
|
29 |
2-3 |
p. 205-223
19 p.
|
artikel
|
| 12 |
Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells
|
Mandelkorn, Joseph
|
|
1990
|
29 |
2-3 |
p. 121-130
10 p.
|
artikel
|
| 13 |
Space solar cell performance measurements and characterization
|
Anspaugh, Bruce
|
|
1990
|
29 |
2-3 |
p. 245-256
12 p.
|
artikel
|
| 14 |
Testing of solar cells by means of spectral analysis
|
Gummel, H.K.
|
|
1990
|
29 |
2-3 |
p. 103-109
7 p.
|
artikel
|
| 15 |
The violet cell: An improved silicon solar cell
|
Lindmayer, J.
|
|
1990
|
29 |
2-3 |
p. 151-166
16 p.
|
artikel
|
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