| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced Processing of GaN for Electronic Devices
|
Cao, X. A.
|
|
2000
|
|
4 |
p. 279-390
|
artikel
|
| 2 |
A new type of junction: Amorphous/crystalline
|
Brodsky, M. H.
|
|
1975
|
|
4 |
p. 591-595
|
artikel
|
| 3 |
Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth
|
Eres, Gyula
|
|
1998
|
|
4 |
p. 275-322
|
artikel
|
| 4 |
Arsenic passivation of Si and Ge surfaces
|
Bringans, R. D.
|
|
1992
|
|
4 |
p. 353-395
|
artikel
|
| 5 |
Behavior and properties of single atoms on metal surfaces
|
Tsong, T. T.
|
|
1978
|
|
4 |
p. 289-316
|
artikel
|
| 6 |
Chemical beam epitaxy
|
Houng, Yu-Min
|
|
1992
|
|
4 |
p. 277-306
|
artikel
|
| 7 |
Chemical Structures of the SiO2Si Interface
|
Hattori, Takeo
|
|
1995
|
|
4 |
p. 339-382
|
artikel
|
| 8 |
Comparison of PbTe diodes fabricated by epitaxial growth and by ion implantation of epitaxial layers
|
Haas, D.
|
|
1975
|
|
4 |
p. 547-553
|
artikel
|
| 9 |
Contributions of surface physics to catalysis
|
Fischer, T. E.
|
|
1976
|
|
4 |
p. 401-411
|
artikel
|
| 10 |
Controlled atmosphere electron microscopy of gas-solid interactions
|
Baker, R. T. K.
|
|
1976
|
|
4 |
p. 375-399
|
artikel
|
| 11 |
Correlation effects in ionic conductivity
|
Murch, Graeme E.
|
|
1989
|
|
4 |
p. 345-365
|
artikel
|
| 12 |
Deep-impurity-level spectroscopy at the GaAs epilayer/substrate interface, using a new constant-capacitance TSCAP method
|
Engemann, J.
|
|
1975
|
|
4 |
p. 485-489
|
artikel
|
| 13 |
Defects in crystals studied by Raman scattering
|
Kitajima, Masahiro
|
|
1997
|
|
4 |
p. 275-349
|
artikel
|
| 14 |
Development of kinetic aspects in catalysis research
|
Schwab, Georg-Maria
|
|
1982
|
|
4 |
p. 331-347
|
artikel
|
| 15 |
Development of Oxidation Sources in Preparation of High-Tc Oxide Superconductor Thin Films Using the Molecular Beam Epitaxy Method
|
Nonaka, Hidehiko
|
|
1995
|
|
4 |
p. 285-338
|
artikel
|
| 16 |
Diffusion in surface layers
|
Ehrlicb, Gert
|
|
1982
|
|
4 |
p. 391-409
|
artikel
|
| 17 |
Direct recoil spectrometry
|
Rabalais, J. Wayne
|
|
1988
|
|
4 |
p. 319-376
|
artikel
|
| 18 |
Double-heterojunction photocathode devices
|
Sahai, R.
|
|
1975
|
|
4 |
p. 565-576
|
artikel
|
| 19 |
Dynamic light scattering in solid polymers
|
Stevens, James R.
|
|
1984
|
|
4 |
p. 297-328
|
artikel
|
| 20 |
Effective mass of holes in quaternary InGaAsP alloys lattice-matched to InP
|
Osinski, Marek
|
|
1989
|
|
4 |
p. 327-343
|
artikel
|
| 21 |
Electronic structure of polymers
|
Fabish, Thomas J.
|
|
1979
|
|
4 |
p. 383-420
|
artikel
|
| 22 |
Empirical Molecular Dynamics Modeling of Silicon and Silicon Dioxide: A Review
|
Schaible, M.
|
|
1999
|
|
4 |
p. 265-323
|
artikel
|
| 23 |
Equations of state and thermal expansion of alkali halides
|
Merchant, H. D.
|
|
1973
|
|
4 |
p. 451-504
|
artikel
|
| 24 |
Excitation and recombination processes during electroluminescence of rare earth-activated materials
|
Godlewski, M.
|
|
1994
|
|
4 |
p. 199-239
|
artikel
|
| 25 |
Experimental studies of transport properties in epitaxial grown InAs0.55P0.35 films deposited on semi-insulating GaAs substrate
|
Li, S. S.
|
|
1975
|
|
4 |
p. 491-498
|
artikel
|
| 26 |
Fairly-long water waves
|
Witting, James
|
|
1971
|
|
4 |
p. 555-581
|
artikel
|
| 27 |
Field-assisted photoemission from an Inp/IngaAsp/Inp cathode
|
Escher, J. S.
|
|
1975
|
|
4 |
p. 577-583
|
artikel
|
| 28 |
GaAs surface chemistry - a review
|
Schwartz, B.
|
|
1975
|
|
4 |
p. 609-624
|
artikel
|
| 29 |
Growth and characterization of single crystal insulators on silicon
|
Schowalter, Leo J.
|
|
1989
|
|
4 |
p. 367-421
|
artikel
|
| 30 |
High-κ Dielectric Materials for Microelectronics
|
Wallace, Robert M.
|
|
2003
|
|
4 |
p. 231-285
|
artikel
|
| 31 |
High-resolution electron energy loss spectroscopy
|
Erskine, James L.
|
|
1987
|
|
4 |
p. 311-379
|
artikel
|
| 32 |
Hypersonic relaxation in amorphous polymers
|
Patterson, G. D.
|
|
1980
|
|
4 |
p. 373-397
|
artikel
|
| 33 |
Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of an InGaAlP Compound Semiconductor System
|
Hong, J.
|
|
1998
|
|
4 |
p. 323-396
|
artikel
|
| 34 |
Liquid/solid interfaces during epitaxial nucleation and growth of III-V compounds
|
Mattes, Benton L.
|
|
1975
|
|
4 |
p. 457-473
|
artikel
|
| 35 |
Low-temperature heat capacity of metals
|
Phillips, Norman E.
|
|
1971
|
|
4 |
p. 467-553
|
artikel
|
| 36 |
Magnetic properties of stage 2 CoCl2-graphite intercalation compound
|
Suzuki, Masatsugu
|
|
1990
|
|
4 |
p. 237-254
|
artikel
|
| 37 |
Mechanical properties of metal matrix composites
|
Lynch, C. T.
|
|
1970
|
|
4 |
p. 481-573
|
artikel
|
| 38 |
Modification of the strength of solids by chemisorption
|
Latanision, R. M.
|
|
1978
|
|
4 |
p. 317-331
|
artikel
|
| 39 |
Molecular and atomic beam scaltering from surfaces
|
Frankl, D. R.
|
|
1982
|
|
4 |
p. 411-429
|
artikel
|
| 40 |
Molecular structure calculations applied to solid state polymer physics: Part II
|
Hopfinger, A. J.
|
|
1980
|
|
4 |
p. 335-371
|
artikel
|
| 41 |
Optical and electronic properties of thin AlxGa1-x As/GaAs heterostructures
|
Dingle, R.
|
|
1975
|
|
4 |
p. 585-590
|
artikel
|
| 42 |
Optical detection of cyclotron resonance for characterization of recombination processes in semiconductors
|
Godlewski, M.
|
|
1994
|
|
4 |
p. 241-301
|
artikel
|
| 43 |
Optical properties of silicon-based materials: A comparison of porous and spark-processed silicon
|
Ludwig, Matthias H.
|
|
1996
|
|
4 |
p. 265-351
|
artikel
|
| 44 |
Photoelectron spectroscopy of adsorption layers
|
Menzel, Dietrich
|
|
1978
|
|
4 |
p. 357-384
|
artikel
|
| 45 |
Photoelectron spectroscopy of the valence electronic structure of polymers
|
Salaneck, William R.
|
|
1984
|
|
4 |
p. 267-296
|
artikel
|
| 46 |
Piezoelectricity in polymers
|
Kepler, R. G.
|
|
1980
|
|
4 |
p. 399-447
|
artikel
|
| 47 |
Problems in the theory of heterojunction discontinuities
|
Kroemer, Herbert
|
|
1975
|
|
4 |
p. 555-564
|
artikel
|
| 48 |
Properties and applications of copper indium diselenide
|
Haneman, D.
|
|
1988
|
|
4 |
p. 377-413
|
artikel
|
| 49 |
Quantum physics and chemistry of surfaces
|
Appelbaum, Joel A.
|
|
1976
|
|
4 |
p. 357-374
|
artikel
|
| 50 |
Reaction mechanisms in catalysis by metals
|
Ertl, G.
|
|
1982
|
|
4 |
p. 349-372
|
artikel
|
| 51 |
Reactive molecular beam epitaxy
|
Yoshida, Sadafumi
|
|
1983
|
|
4 |
p. 287-316
|
artikel
|
| 52 |
Recent advances in the amplification of surface elastic waves in layered structures
|
Turner, C. W.
|
|
1970
|
|
4 |
p. 575-603
|
artikel
|
| 53 |
Segregation to surfaces: Dilute alloys of the transition metals
|
Blakely, J. M.
|
|
1978
|
|
4 |
p. 333-355
|
artikel
|
| 54 |
Semiconductor band structure as determined from angle resolved photoelectron spectroscopy
|
Leckey, R. C. G.
|
|
1992
|
|
4 |
p. 307-352
|
artikel
|
| 55 |
Size-Selected Clusters on Solid Surfaces
|
Heiz, Ueli
|
|
2001
|
|
4 |
p. 251-290
|
artikel
|
| 56 |
Some electrical properties of high-resistivity zinc sulfide
|
Joseph, James Dean
|
|
1975
|
|
4 |
p. 421-439
|
artikel
|
| 57 |
Strain relaxation mechanisms of thin deposited films
|
Murakami, Masanori
|
|
1983
|
|
4 |
p. 317-354
|
artikel
|
| 58 |
Structure property relations in short-fiber reinforced plastics
|
Kardos, John L.
|
|
1973
|
|
4 |
p. 419-450
|
artikel
|
| 59 |
Surface and adsorbate structural studies by photoemission in the hv = 50- TO 500-eV Range
|
Shirley, David A.
|
|
1982
|
|
4 |
p. 373-390
|
artikel
|
| 60 |
Surface effects in controlled thermonuclear fusion
|
Kaminsky, Manfred
|
|
1976
|
|
4 |
p. 433-457
|
artikel
|
| 61 |
Surface science in the electronics industry
|
Arthur, J. R.
|
|
1976
|
|
4 |
p. 413-431
|
artikel
|
| 62 |
The atomic structure of vicinal Si(OO1) and Ge(001)
|
Griffirh, J. E.
|
|
1990
|
|
4 |
p. 255-289
|
artikel
|
| 63 |
The electrical properties of semiconductor/metal, semiconductor/liquid, and semiconductor/conducting polymer contacts
|
Kumar, Amit
|
|
1993
|
|
4 |
p. 327-353
|
artikel
|
| 64 |
The electronic properties of epitaxial layers
|
Matare, H. F.
|
|
1975
|
|
4 |
p. 499-545
|
artikel
|
| 65 |
The Electronic Properties of Nanomaterials Elucidated by Synchrotron Radiation-Based Spectroscopy
|
Ray, S. C.
|
|
2006
|
|
4 |
p. 91-110
|
artikel
|
| 66 |
The interface between semiconducting epitaxial GaAs and A semi-insulating substrate
|
Lehovec, Kurt
|
|
1975
|
|
4 |
p. 475-484
|
artikel
|
| 67 |
The lattice larameter of GaAs and InP with reference to interfaces
|
Mullin, J. B.
|
|
1975
|
|
4 |
p. 441-456
|
artikel
|
| 68 |
The measurement of small changes in ultrasonic velocity and attenuation
|
Papadakis, Ernmanuel P.
|
|
1973
|
|
4 |
p. 373-418
|
artikel
|
| 69 |
Theoretical calculations of the properties of point defects in solids
|
Hardy, J. P.
|
|
1970
|
|
4 |
p. 605-643
|
artikel
|
| 70 |
Theory of varistor electronic properties
|
Levine, Jules D.
|
|
1975
|
|
4 |
p. 597-608
|
artikel
|
| 71 |
Thermodynamic Aspects of Polymer Mixtures
|
Nishi, Toshio
|
|
1984
|
|
4 |
p. 329-353
|
artikel
|
| 72 |
The structure, chemistry, and spectroscopy of the surfaces of tetrahedrally coordinated semiconductors
|
Mark, P.
|
|
1979
|
|
4 |
p. 317-381
|
artikel
|
| 73 |
UV photo-assisted crystal growth of II-VI compounds
|
Irvine, Stuart J. C.
|
|
1987
|
|
4 |
p. 279-309
|
artikel
|
| 74 |
Zero-Valent Iron Nanoparticles for Abatement of Environmental Pollutants: Materials and Engineering Aspects
|
Li, Xiao-qin
|
|
2006
|
|
4 |
p. 111-122
|
artikel
|
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