nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A Critical Review of Chemical Vapor-Deposited (CVD) Diamond for Electronic Applications
|
Railkar, T. A. |
|
2000 |
|
3 |
p. 163-277 |
artikel |
2 |
Amorphous semiconductors
|
Adler, David |
|
1971 |
|
3 |
p. 317-465 |
artikel |
3 |
Analytical methods in oceanography I. Inorganic methods
|
Spencer, Derek W. |
|
1970 |
|
3 |
p. 409-478 |
artikel |
4 |
Anderson localization in silicon inversion layers
|
Pepper, M. |
|
1975 |
|
3 |
p. 375-384 |
artikel |
5 |
An unusual C-V effect
|
Soonpaa, Henn H. |
|
1975 |
|
3 |
p. 341-343 |
artikel |
6 |
A review of the halogen adsorption process on metal surfaces
|
Dowben, P. A. |
|
1987 |
|
3 |
p. 191-210 |
artikel |
7 |
Auger electron spectroscopy studies of GaAs and Si metal-semiconductor structures
|
Robinson, G. Y. |
|
1975 |
|
3 |
p. 291-296 |
artikel |
8 |
Band structure and chemical bonding in transition metal carbides and nitrides
|
Schwarz, Karlheinz |
|
1987 |
|
3 |
p. 211-257 |
artikel |
9 |
Carbon Nanotubes: Synthesis, Properties, and Applications
|
Sinnott, Susan B. |
|
2001 |
|
3 |
p. 145-249 |
artikel |
10 |
Carrier scattering at elemental and compound semiconductor interfaces
|
Greene, R. F. |
|
1975 |
|
3 |
p. 345-351 |
artikel |
11 |
Charge Movement through Electrochromic Thin-Film Tungsten Trioxide
|
Monk, Paul M. S. |
|
1999 |
|
3 |
p. 193-226 |
artikel |
12 |
Chemical bonding and structure of metal/semiconductor interfaces
|
Andrews, J. M. |
|
1975 |
|
3 |
p. 405-408 |
artikel |
13 |
Chemisorption: Island formation and adatom interactions
|
Lagally, Max G. |
|
1978 |
|
3 |
p. 233-259 |
artikel |
14 |
Chemisorption of H, Cl, Na, O, and S atoms on Ni(100) surfaces: A theoretical study using Ni20 clusters
|
Upton, Thomas H. |
|
1981 |
|
3 |
p. 261-296 |
artikel |
15 |
Chemisorption theory
|
Grimley, T. B. |
|
1976 |
|
3 |
p. 239-252 |
artikel |
16 |
Core-level photoemission studies of surfaces, interfaces, and overlayers
|
Chiang, Tai-Chang |
|
1988 |
|
3 |
p. 269-317 |
artikel |
17 |
Correlation of surface states with impurities
|
Schulz, M. |
|
1975 |
|
3 |
p. 319-325 |
artikel |
18 |
Electromigration in integrated circuits
|
Malone, D. W. |
|
1997 |
|
3 |
p. 199-238 |
artikel |
19 |
Electron beam imaging of the semiconductor-insulator interface
|
Bottoms, W. R. |
|
1975 |
|
3 |
p. 297-311 |
artikel |
20 |
Electronic properties of cleaved GaAs(110) surfaces covered with cesium
|
Clemens, H. |
|
1975 |
|
3 |
p. 273-280 |
artikel |
21 |
Electron irradiation of polymers and its application to resists for electron-beam lithography
|
Bowden, Murrae J. |
|
1979 |
|
3 |
p. 223-264 |
artikel |
22 |
Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2
|
Greene, J. E. |
|
1983 |
|
3 |
p. 189-227 |
artikel |
23 |
Extended energy loss fine structure analysis
|
De Crescenzi, Maurizio |
|
1989 |
|
3 |
p. 279-325 |
artikel |
24 |
Focused, Nanoscale Electron-Beam-Induced Deposition and Etching
|
Randolph, S. J. |
|
2006 |
|
3 |
p. 55-89 |
artikel |
25 |
Frequency dependence of cyclotron resonance in Si inversion layers
|
Kennedy, T. A. |
|
1975 |
|
3 |
p. 391-395 |
artikel |
26 |
Gas effects on lead chalcogenides
|
Zemel, J. N. |
|
1975 |
|
3 |
p. 369-374 |
artikel |
27 |
Hydrogen in amorphous semiconductors
|
Knights, John C. |
|
1980 |
|
3 |
p. 211-283 |
artikel |
28 |
Kinetics and Thermodynamics of Surface Steps on Semiconductors
|
Ogino, Toshio |
|
1999 |
|
3 |
p. 227-263 |
artikel |
29 |
Kinetics of adsorption, desorption, and migration at singlecrystal metal surfaces
|
King, David A. |
|
1978 |
|
3 |
p. 167-208 |
artikel |
30 |
Medical applications of magnetism
|
Frei, E. H. |
|
1970 |
|
3 |
p. 381-407 |
artikel |
31 |
Misfit dislocation generation in epitaxial layers
|
van der Merwe, Jan H. |
|
1991 |
|
3 |
p. 187-209 |
artikel |
32 |
Mis optical memory with phase-sensitive readout
|
Glosser, R. |
|
1975 |
|
3 |
p. 337-340 |
artikel |
33 |
Modification of silicon properties with lasers, electron beams, and incoherent light
|
Celler, George K. |
|
1984 |
|
3 |
p. 193-265 |
artikel |
34 |
Molecular beam epitaxy of III-V semiconductors
|
Wicks, Gary W. |
|
1993 |
|
3 |
p. 239-260 |
artikel |
35 |
Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems
|
Melloch, M. R. |
|
1996 |
|
3 |
p. 189-263 |
artikel |
36 |
Molecular beam epitaxy-surface and kinetic effects
|
Foxon, C. T. |
|
1981 |
|
3 |
p. 235-242 |
artikel |
37 |
Molecular structure calculations applied to solid state polymer physics: Part I
|
Hopfinger, A. J. |
|
1980 |
|
3 |
p. 285-333 |
artikel |
38 |
Monolayer physical adsorption on crystal surfaces
|
Steele, William A. |
|
1976 |
|
3 |
p. 223-237 |
artikel |
39 |
Ohmic contacts to GaAs epitaxial layers
|
Kim, T-J. |
|
1997 |
|
3 |
p. 239-273 |
artikel |
40 |
Optical monitoring of the surface potential in small-gap semiconductors
|
Glosser, R. |
|
1975 |
|
3 |
p. 287-290 |
artikel |
41 |
Peaked structure appearing in the field effect mobility of silicon mos devices at temperatures above 20 K
|
Stradling, R. A. |
|
1975 |
|
3 |
p. 359-368 |
artikel |
42 |
Phonons in semiconductors
|
Sinba, S. K. |
|
1973 |
|
3 |
p. 273-334 |
artikel |
43 |
Photoemission measurements of filled and empty surface states on semiconductors and their relation to schottky barriers
|
Freeouf, J. L. |
|
1975 |
|
3 |
p. 245-258 |
artikel |
44 |
Physics with catalytic metal gate chemical sensors
|
Lundstrom, Ingeniar |
|
1989 |
|
3 |
p. 201-278 |
artikel |
45 |
Picosecond spectroscopy applied to the study of chemical and biological reactions
|
Kaufmann, Kenneth J. |
|
1979 |
|
3 |
p. 265-316 |
artikel |
46 |
Polarization layer at metal/insulator interfaces
|
Wang, C. G. |
|
1975 |
|
3 |
p. 327-335 |
artikel |
47 |
Reactive Phase Formation in Thin Film Metal/Metal and Metal/Silicon Diffusion Couples
|
Laurila, Tomi |
|
2003 |
|
3 |
p. 185-230 |
artikel |
48 |
Recent developments in acoustic holography and imaging
|
Wade, Glen |
|
1973 |
|
3 |
p. 335-372 |
artikel |
49 |
Review of structure and mobility in amorphous polymers
|
O'reilly, James M. |
|
1987 |
|
3 |
p. 259-277 |
artikel |
50 |
Selective vapor-phase deposition on patterned substrates
|
Carlsson, Jan-Otto |
|
1990 |
|
3 |
p. 161-212 |
artikel |
51 |
Solar cells
|
Tsubomura, Hiroshi |
|
1993 |
|
3 |
p. 261-326 |
artikel |
52 |
Spin- and angle-resolved photoelectron spectroscopy from solid surfaces with circularly polarized light
|
Schneider, C. M. |
|
1995 |
|
3 |
p. 179-283 |
artikel |
53 |
Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage
|
Malherbe, Johan B. |
|
1994 |
|
3 |
p. 129-195 |
artikel |
54 |
Stresses and deformation processes in thin films on substrates
|
Doerner, Mary F. |
|
1988 |
|
3 |
p. 225-268 |
artikel |
55 |
Structural studies of clean and overlayered surfaces with an application to xe adsorption on Ag
|
Webb, M. B. |
|
1976 |
|
3 |
p. 253-273 |
artikel |
56 |
Structure and bonding in narrow gap semiconductors
|
Littlewood, Peter B. |
|
1983 |
|
3 |
p. 229-285 |
artikel |
57 |
Structure and physical properties of liquid crystals
|
Brown, Glen H. |
|
1970 |
|
3 |
p. 303-379 |
artikel |
58 |
Structure and thermodynamic properties of the crystal'melt interface of a monoatomic substance
|
Bonissent, A. |
|
1981 |
|
3 |
p. 297-329 |
artikel |
59 |
Studies of polymer crystal morphology using the raman active longitudinal acoustical mode
|
Rabolt, John F. |
|
1984 |
|
3 |
p. 165-191 |
artikel |
60 |
Surface analysis by means of ion beams
|
Benninghoven, A. |
|
1976 |
|
3 |
p. 291-316 |
artikel |
61 |
Surface analysis by means of magnetic resonance techniques
|
Lunsford, Jack H. |
|
1976 |
|
3 |
p. 337-355 |
artikel |
62 |
Surface analysis by means of photoemission and other photon-stimulated processes
|
Spicer, W. E. |
|
1976 |
|
3 |
p. 317-336 |
artikel |
63 |
Surface analysis using electron beams
|
Park, Robert L. |
|
1976 |
|
3 |
p. 275-289 |
artikel |
64 |
Surface and bulk charge carrier transport in InAs epilayers
|
Sites, J. R. |
|
1975 |
|
3 |
p. 385-389 |
artikel |
65 |
Surface excitons, calculation of their dispersion curve, and possibilities for their experimental observation
|
Fischer, B. |
|
1975 |
|
3 |
p. 281-285 |
artikel |
66 |
Surface plasmons in semiconductor-insulator multilayers
|
Holm, R. T. |
|
1975 |
|
3 |
p. 397-404 |
artikel |
67 |
Surface studies on clean and oxygen-exposed GaAs and Ge surfaces by low-energy electron loss spectroscopy
|
Ludeke, R. |
|
1975 |
|
3 |
p. 259-271 |
artikel |
68 |
Tailored Ceramic Film Growth at Low Temperature by Reactive Sputter Deposition
|
Aita, C. R. |
|
1998 |
|
3 |
p. 205-274 |
artikel |
69 |
The determination of the habit planes of nanometer-size single-crystal gold particles
|
Yacaman, M. J. |
|
1981 |
|
3 |
p. 243-260 |
artikel |
70 |
The ionic states of molecular crystals
|
Hanson, David M. |
|
1973 |
|
3 |
p. 243-271 |
artikel |
71 |
The Mos/InP interface
|
Wilmsen, Carl W. |
|
1975 |
|
3 |
p. 313-317 |
artikel |
72 |
Theory of indirect interaction between chemisorbed atoms
|
Einstein, Theodore L. |
|
1978 |
|
3 |
p. 261-288 |
artikel |
73 |
The past, present, and future of auger line shape analysis
|
Ramaker, David E. |
|
1991 |
|
3 |
p. 211-276 |
artikel |
74 |
The role of lattice misfit in epitaxy
|
Van Der Merwe, Jan H. |
|
1978 |
|
3 |
p. 209-231 |
artikel |
75 |
Transferred electron devices with emphasis on the role of the contacts - a review
|
Grubin, H. L. |
|
1975 |
|
3 |
p. 409-417 |
artikel |
76 |
Tunneling and some electronic properties of compound semiconductors
|
Tsui, D. C. |
|
1975 |
|
3 |
p. 353-357 |
artikel |
77 |
X-Ray photoelectron and auger electroo forward scattering: A new tool for surface crystallography
|
Egelhoff, William F. |
|
1990 |
|
3 |
p. 213-235 |
artikel |