| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Characterization of advanced epitaxial structures
|
Hamilton, B.
|
|
1989
|
19 |
1-2 |
p. 51-62
12 p.
|
article
|
| 2 |
Chemical boundary layers in (MO)CVD
|
de Croon, M.H.J.M.
|
|
1989
|
19 |
1-2 |
p. 125-136
12 p.
|
article
|
| 3 |
Editorial Board
|
|
|
1989
|
19 |
1-2 |
p. IFC-
1 p.
|
article
|
| 4 |
III–V alloys and their potential for visible emitter applications
|
André, J.P.
|
|
1989
|
19 |
1-2 |
p. 97-105
9 p.
|
article
|
| 5 |
Materials for optoelectronic and photonic integrated circuits
|
Henning, I.D.
|
|
1989
|
19 |
1-2 |
p. 1-20
20 p.
|
article
|
| 6 |
Metalorganic vapour phase epitaxy: Selected workshop topics
|
Mullin, Brian
|
|
1989
|
19 |
1-2 |
p. i-
1 p.
|
article
|
| 7 |
MOMBE and MOVPE—A comparison of growth techniques
|
Weyers, M.
|
|
1989
|
19 |
1-2 |
p. 83-96
14 p.
|
article
|
| 8 |
New device concepts: The implications for MOVPE
|
Beeby, J.L.
|
|
1989
|
19 |
1-2 |
p. 107-114
8 p.
|
article
|
| 9 |
Photo-induced organometallic processes in semiconductor surface technology
|
Haigh, J.
|
|
1989
|
19 |
1-2 |
p. 149-157
9 p.
|
article
|
| 10 |
Reaction mechanisms in OMVPE growth of GaAs determined using D2 labelling experiments
|
Stringfellow, G.B.
|
|
1989
|
19 |
1-2 |
p. 115-123
9 p.
|
article
|
| 11 |
Recent advances in III–V compounds on silicon
|
Razeghi, M.
|
|
1989
|
19 |
1-2 |
p. 21-37
17 p.
|
article
|
| 12 |
The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices
|
Smith, L.M.
|
|
1989
|
19 |
1-2 |
p. 63-81
19 p.
|
article
|
| 13 |
The role of surface and gas phase reactions in atomic layer epitaxy
|
Dapkus, P.D.
|
|
1989
|
19 |
1-2 |
p. 137-147
11 p.
|
article
|
| 14 |
Very uniform epitaxy
|
Mircea, A.
|
|
1989
|
19 |
1-2 |
p. 39-49
11 p.
|
article
|
Journal description