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                             52 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advances in X-ray analysis: Volume 26 Sullivan, R.A.L.
 1984
 1-2 p. iv-
1 p.
 artikel
2 Apatites in biological systems Zapanta LeGeros, Raquel
 1981
 1-2 p. 1-45
45 p.
 artikel
3 Biological mineralization and demineralization Underwood, F.A.
 1984
 1-2 p. iii-
1 p.
 artikel
4 Calcium phosphate microspheres in biology Pautard, F.G.E.
 1981
 1-2 p. 89-98
10 p.
 artikel
5 Chapter 5 Analysis by heavy ion induced X-ray emission Heitz, Ch.
 1984
 1-2 p. 131-150
20 p.
 artikel
6 Chapter 8 Analysis of electronic and solar grade silicon by atomic emission spectroscopy from inductively coupled plasma Morvan, D.
 1984
 1-2 p. 175-180
6 p.
 artikel
7 Chapter 7 Application of neutron activation analysis to silicon characterization Revel, Gilles
 1984
 1-2 p. 167-173
7 p.
 artikel
8 Chapter 4 Determination of impurities in silicon by activation analyses using charged particle accelerators Debrun, J.L.
 1984
 1-2 p. 115-129
15 p.
 artikel
9 Chapter 3 Low energy ion scattering spectrometry Grob, J.J.
 1984
 1-2 p. 107-114
8 p.
 artikel
10 Chapter 2 Rutherford Backscattering Spectroscopy (R.B.S.) Grob, J.J.
 1984
 1-2 p. 59-106
48 p.
 artikel
11 Chapter 1 Secondary Ion Mass Spectrometry (S.I.M.S.) Stuck, R.
 1984
 1-2 p. 11-57
47 p.
 artikel
12 Chapter 6 Spark source mass spectrometry analysis — Its application to polycrystalline solar grade silicon Lasne, C.
 1984
 1-2 p. 151-165
15 p.
 artikel
13 Characterization of advanced epitaxial structures Hamilton, B.
 1989
 1-2 p. 51-62
12 p.
 artikel
14 Characterization of silicon by ion beam techniques 1984
 1-2 p. 1-
1 p.
 artikel
15 Characterization of silicon by ion beam techniques Siffert, P.
 1984
 1-2 p. 3-9
7 p.
 artikel
16 Characterization of solids by Mössbauer spectroscopy Van Rossum, M.
 1982
 1-2 p. 1-45
45 p.
 artikel
17 Chemical boundary layers in (MO)CVD de Croon, M.H.J.M.
 1989
 1-2 p. 125-136
12 p.
 artikel
18 Conclusion 1984
 1-2 p. 181-187
7 p.
 artikel
19 Crystal chemistry of octacalcium phosphate Brown, W.E.
 1981
 1-2 p. 59-87
29 p.
 artikel
20 Crystal growth in bile June Sutor, D.
 1981
 1-2 p. 47-57
11 p.
 artikel
21 Crystal growth of calcium carbonate in the invertebrates Watabe, Norimitsu
 1981
 1-2 p. 99-147
49 p.
 artikel
22 Editorial Schwab, C.
 1982
 1-2 p. i-
1 p.
 artikel
23 Editorial Board 1989
 1-2 p. IFC-
1 p.
 artikel
24 Editorial Board 1982
 1-2 p. IFC-
1 p.
 artikel
25 Editorial Board 1981
 1-2 p. IFC-
1 p.
 artikel
26 Editorial Board 1984
 1-2 p. IFC-
1 p.
 artikel
27 Editorial Board 1984
 1-2 p. IFC-
1 p.
 artikel
28 Editorial The future of crystal growth and characterization Pamplin, Brian
 1984
 1-2 p. i-ii
nvt p.
 artikel
29 Errata 1982
 1-2 p. ix-x
nvt p.
 artikel
30 Forthcoming conferences 1982
 1-2 p. v-vii
nvt p.
 artikel
31 Hydrodynamics of Czochralski growth—A review of the effects of rotation and buoyancy force Jones, A.D.W.
 1984
 1-2 p. 139-168
30 p.
 artikel
32 III–V alloys and their potential for visible emitter applications André, J.P.
 1989
 1-2 p. 97-105
9 p.
 artikel
33 Laser crystals Pamplin, Brian
 1982
 1-2 p. iii-
1 p.
 artikel
34 Materials for optoelectronic and photonic integrated circuits Henning, I.D.
 1989
 1-2 p. 1-20
20 p.
 artikel
35 Metalorganic vapour phase epitaxy: Selected workshop topics Mullin, Brian
 1989
 1-2 p. i-
1 p.
 artikel
36 Models of LPE growth of garnets Čermák, J.
 1984
 1-2 p. 105-138
34 p.
 artikel
37 Modern crystallography I symmetry of crystals methods of structural crystallography Underwood, F.A.
 1982
 1-2 p. iv-
1 p.
 artikel
38 Molecular organic crystals: A survey of their purification, growth and characterization Samoc, M.
 1981
 1-2 p. 149-172
24 p.
 artikel
39 MOMBE and MOVPE—A comparison of growth techniques Weyers, M.
 1989
 1-2 p. 83-96
14 p.
 artikel
40 New device concepts: The implications for MOVPE Beeby, J.L.
 1989
 1-2 p. 107-114
8 p.
 artikel
41 Optical characterization of deep energy levels in semiconductors Monemar, B.
 1982
 1-2 p. 47-88
42 p.
 artikel
42 Photo-induced organometallic processes in semiconductor surface technology Haigh, J.
 1989
 1-2 p. 149-157
9 p.
 artikel
43 Photoluminescence as a diagnostic of semiconductors Dean, P.J.
 1982
 1-2 p. 89-174
86 p.
 artikel
44 Physics and technology of vapour phase epitaxial growth of GaAs—A review Jain, B.P.
 1984
 1-2 p. 51-103
53 p.
 artikel
45 Quasi-Rheotaxial growth of large crystalline grain thin films on low cost substrates for photovoltaic applications Romeo, N.
 1984
 1-2 p. 169-183
15 p.
 artikel
46 Reaction mechanisms in OMVPE growth of GaAs determined using D2 labelling experiments Stringfellow, G.B.
 1989
 1-2 p. 115-123
9 p.
 artikel
47 Recent advances in III–V compounds on silicon Razeghi, M.
 1989
 1-2 p. 21-37
17 p.
 artikel
48 Recent developments in condensed matter physics volume 1 Pamplin, Brian
 1982
 1-2 p. iii-
1 p.
 artikel
49 Surface microtopography of aqueous solution grown crystals van Enckevort, W.J.P.
 1984
 1-2 p. 1-50
50 p.
 artikel
50 The growth and characterization of CdxHg1−xTe (CMT) on GaAs for optical fibre communication devices Smith, L.M.
 1989
 1-2 p. 63-81
19 p.
 artikel
51 The role of surface and gas phase reactions in atomic layer epitaxy Dapkus, P.D.
 1989
 1-2 p. 137-147
11 p.
 artikel
52 Very uniform epitaxy Mircea, A.
 1989
 1-2 p. 39-49
11 p.
 artikel
                             52 gevonden resultaten
 
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